Pagina 249 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Infineon Technologies - Transistor - FET, MOSFET - Singoli

Record 8.381
Pagina  249/300
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP26CN10NGHKSA1
Infineon Technologies

MOSFET N-CH 100V 35A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 39µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.560
MOSFET (Metal Oxide)
100V
35A (Tc)
10V
4V @ 39µA
31nC @ 10V
2070pF @ 50V
±20V
-
71W (Tc)
26 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IPP25N06S3L-22
Infineon Technologies

MOSFET N-CH 55V 25A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.6 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione103.464
MOSFET (Metal Oxide)
55V
25A (Tc)
5V, 10V
2.2V @ 20µA
47nC @ 10V
2260pF @ 25V
±16V
-
50W (Tc)
21.6 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP25N06S325XK
Infineon Technologies

MOSFET N-CH 55V 25A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 25.1 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.224
MOSFET (Metal Oxide)
55V
25A (Tc)
10V
4V @ 20µA
41nC @ 10V
1862pF @ 25V
±20V
-
48W (Tc)
25.1 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP21N03L G
Infineon Technologies

MOSFET N-CH TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.336
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
-
-
-
-
Through Hole
PG-TO-220-3
TO-220-3
IPP16CNE8N G
Infineon Technologies

MOSFET N-CH 85V 53A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 61µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.616
MOSFET (Metal Oxide)
85V
53A (Tc)
10V
4V @ 61µA
48nC @ 10V
3230pF @ 40V
±20V
-
100W (Tc)
16.5 mOhm @ 53A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP13N03LB G
Infineon Technologies

MOSFET N-CH 30V 30A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1355pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.696
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
2V @ 20µA
10nC @ 5V
1355pF @ 15V
±20V
-
52W (Tc)
12.8 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP12CNE8N G
Infineon Technologies

MOSFET N-CH 85V 67A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.432
MOSFET (Metal Oxide)
85V
67A (Tc)
10V
4V @ 83µA
64nC @ 10V
4340pF @ 40V
±20V
-
125W (Tc)
12.9 mOhm @ 67A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP12CN10N G
Infineon Technologies

MOSFET N-CH 100V 67A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.312
MOSFET (Metal Oxide)
100V
67A (Tc)
10V
4V @ 83µA
65nC @ 10V
4320pF @ 50V
±20V
-
125W (Tc)
12.9 mOhm @ 67A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP120N06NGAKSA1
Infineon Technologies

MOSFET N-CH 60V 75A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.216
MOSFET (Metal Oxide)
60V
75A (Tc)
10V
4V @ 94µA
62nC @ 10V
2100pF @ 30V
±20V
-
158W (Tc)
12 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP11N03LA
Infineon Technologies

MOSFET N-CH 25V 30A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.784
MOSFET (Metal Oxide)
25V
30A (Tc)
4.5V, 10V
2V @ 20µA
11nC @ 5V
1358pF @ 15V
±20V
-
52W (Tc)
11.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP10N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.944
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
2V @ 20µA
13nC @ 5V
1639pF @ 15V
±20V
-
58W (Tc)
9.9 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP100N06S3L-04
Infineon Technologies

MOSFET N-CH 55V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.648
MOSFET (Metal Oxide)
55V
100A (Tc)
5V, 10V
2.2V @ 150µA
362nC @ 10V
17270pF @ 25V
±16V
-
214W (Tc)
3.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
hot IPP100N06S3L-03
Infineon Technologies

MOSFET N-CH 55V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.612
MOSFET (Metal Oxide)
55V
100A (Tc)
5V, 10V
2.2V @ 230µA
550nC @ 10V
26240pF @ 25V
±16V
-
300W (Tc)
3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP100N06S3-04
Infineon Technologies

MOSFET N-CH 55V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.240
MOSFET (Metal Oxide)
55V
100A (Tc)
10V
4V @ 150µA
314nC @ 10V
14230pF @ 25V
±20V
-
214W (Tc)
4.4 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP100N06S3-03
Infineon Technologies

MOSFET N-CH 55V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.984
MOSFET (Metal Oxide)
55V
100A (Tc)
10V
4V @ 230µA
480nC @ 10V
21620pF @ 25V
±20V
-
300W (Tc)
3.3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP08CNE8N G
Infineon Technologies

MOSFET N-CH 85V 95A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6690pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.912
MOSFET (Metal Oxide)
85V
95A (Tc)
10V
4V @ 130µA
99nC @ 10V
6690pF @ 40V
±20V
-
167W (Tc)
6.4 mOhm @ 95A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP08CN10N G
Infineon Technologies

MOSFET N-CH 100V 95A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.784
MOSFET (Metal Oxide)
100V
95A (Tc)
10V
4V @ 130µA
100nC @ 10V
6660pF @ 50V
±20V
-
167W (Tc)
8.5 mOhm @ 95A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP080N06N G
Infineon Technologies

MOSFET N-CH 60V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.496
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 150µA
93nC @ 10V
3500pF @ 30V
±20V
-
214W (Tc)
8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP07N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2782pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.240
MOSFET (Metal Oxide)
30V
50A (Tc)
4.5V, 10V
2V @ 40µA
25nC @ 5V
2782pF @ 15V
±20V
-
94W (Tc)
6.6 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
hot IPP070N06N G
Infineon Technologies

MOSFET N-CH 60V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione390.000
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 180µA
118nC @ 10V
4100pF @ 30V
±20V
-
250W (Tc)
7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IPP070N06L G
Infineon Technologies

MOSFET N-CH 60V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione390.000
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2V @ 150µA
126nC @ 10V
4300pF @ 30V
±20V
-
214W (Tc)
7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP06CNE8N G
Infineon Technologies

MOSFET N-CH 85V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9240pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.224
MOSFET (Metal Oxide)
85V
100A (Tc)
10V
4V @ 180µA
138nC @ 10V
9240pF @ 40V
±20V
-
214W (Tc)
6.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IPP06CN10N G
Infineon Technologies

MOSFET N-CH 100V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione8.952
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 180µA
139nC @ 10V
9200pF @ 50V
±20V
-
214W (Tc)
6.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP065N06LGAKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.576
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2V @ 180µA
157nC @ 10V
5100pF @ 30V
±20V
-
250W (Tc)
6.5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP05N03LB G
Infineon Technologies

MOSFET N-CH 30V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3209pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.328
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 40µA
25nC @ 5V
3209pF @ 15V
±20V
-
94W (Tc)
5.3 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP054NE8NGHKSA2
Infineon Technologies

MOSFET N-CH 85V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.440
MOSFET (Metal Oxide)
85V
100A (Tc)
10V
4V @ 250µA
180nC @ 10V
12100pF @ 40V
±20V
-
300W (Tc)
5.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot IPP050N06N G
Infineon Technologies

MOSFET N-CH 60V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione12.420
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 270µA
167nC @ 10V
6100pF @ 30V
±20V
-
300W (Tc)
5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP04N03LB G
Infineon Technologies

MOSFET N-CH 30V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5203pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.544
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 70µA
40nC @ 5V
5203pF @ 15V
±20V
-
107W (Tc)
3.8 mOhm @ 55A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3