Prodotti Vishay Siliconix

2N4416A

Vishay Siliconix

MOSFET N-CH 35V 5MA TO-206AF

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 35V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
• Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
• Resistance - RDS(On): -
• Power - Max: 300mW
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-206AF (TO-72)

pacchetto: TO-206AF, TO-72-4 Metal Can

SI4409DY-T1-E3

Vishay Siliconix

MOSFET P-CH 150V 1.3A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 332pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: 8-SOIC (0.154", 3.90mm Width)

SI5433BDC-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.8A 1206-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 1206-8 ChipFET?
• Package / Case: 8-SMD, Flat Lead

pacchetto: 8-SMD, Flat Lead

SIHP14N50D-GE3

Vishay Siliconix

MOSFET N-CH 500V 14A TO-200AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1144pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IRF730STRLPBF

Vishay Siliconix

MOSFET N-CH 400V 5.5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI7106DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 12.5A 1212-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

pacchetto: PowerPAK? 1212-8

SIHB35N60E-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A D2PAK TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIE818DF-T1-E3

Vishay Siliconix

MOSFET N-CH 75V 60A 10-POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 38V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 10-PolarPAK? (L)
• Package / Case: 10-PolarPAK? (L)

pacchetto: 10-PolarPAK? (L)

SI5511DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
• Power - Max: 3.1W, 2.6W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 1206-8 ChipFET?

pacchetto: 8-SMD, Flat Lead

SIZ700DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 16A PPAK 1212-8

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 16A
• Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
• Power - Max: 2.36W, 2.8W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerPair?
• Supplier Device Package: 6-PowerPair?

pacchetto: 6-PowerPair?

SI1033X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SC89

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 145mA
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 250mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SC-89-6

pacchetto: SOT-563, SOT-666

SISB46DN-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 1212-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
• Power - Max: 23W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? 1212-8 Dual
• Supplier Device Package: PowerPAK? 1212-8 Dual

pacchetto: PowerPAK? 1212-8 Dual

SIP21106DVP-33-E3

Vishay Siliconix

IC REG LINEAR 3.3V 150MA TSC75-6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.22V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 85µA
• PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
• Control Features: Enable
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? TSC-75-6
• Supplier Device Package: PowerPAK? TSC75-6

pacchetto: PowerPAK? TSC-75-6

SIP21106DR-28-E3

Vishay Siliconix

IC REG LINEAR 2.8V 150MA SC70-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.22V @ 150mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 85µA
• PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
• Control Features: Enable
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

pacchetto: 5-TSSOP, SC-70-5, SOT-353

SIC533CD-T1-GE3

Vishay Siliconix

IC POWER STAGE 35A POWERPAK MLP4

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 35A
• Current - Peak Output: 40A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 24 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP4535-22L
• Supplier Device Package: POWERPAK? MLP4535-22L

pacchetto: PowerPAK? MLP4535-22L

DG441DY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 4 Ohm (Max)
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 220ns, 120ns
• -3db Bandwidth: -
• Charge Injection: -1pC
• Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -100dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

DG445DY-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 5 V ~ 36 V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 250ns, 210ns
• -3db Bandwidth: -
• Charge Injection: -1pC
• Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -100dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

DG211BDQ-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16TSSOP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 85 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 4.5 V ~ 25 V
• Voltage - Supply, Dual (V±): ±4.5 V ~ 22 V
• Switch Time (Ton, Toff) (Max): 300ns, 200ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

DG538ADN-T1-E3

Vishay Siliconix

IC AMP/VIDEO/MUX LP 4/8CH 28PLCC

• Applications: Ultrasound, Video
• Multiplexer/Demultiplexer Circuit: 4:1
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 90 Ohm
• Voltage - Supply, Single (V+): 10 V ~ 21 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 500MHz
• Features: T-Switch Configuration
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-LCC (J-Lead)
• Supplier Device Package: 28-PLCC (11.51x11.51)

pacchetto: 28-LCC (J-Lead)

SIC438AED-T1-GE3

Vishay Siliconix

MICROBUCK POWERSAVE

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 20V
• Current - Output: 8A
• Frequency - Switching: 300kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerWFQFN
• Supplier Device Package: PowerPAK® MLP44-24

pacchetto: 24-PowerWFQFN

SIR880BDP-T1-RE3

Vishay Siliconix

N-CHANNEL 80-V (D-S) MOSFET POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), 70.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

pacchetto: -

SISA26DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK1212-8S

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V
• Vgs (Max): +16V, -12V
• FET Feature: -
• Power Dissipation (Max): 39W (Tc)
• Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® 1212-8
• Package / Case: PowerPAK® 1212-8

pacchetto: -

SI3464DV-T1-BE3

Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
• Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: -

SQS140ENW-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 40 V (D-S)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 197W (Tc)
• Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerPAK® 1212-8SLW
• Package / Case: PowerPAK® 1212-8SLW

pacchetto: -

SI4946CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
• Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
• Power - Max: 2W (Ta), 2.8W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacchetto: -

Request a Quote

SQ1902AEL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.78A SC70-6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
• Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
• Power - Max: 430mW
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Supplier Device Package: PowerPAK® SC-70-6 Dual

pacchetto: -

Request a Quote

SQJ160EP-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 60 V (D-S)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

pacchetto: -

Request a Quote

SI4434ADY-T1-GE3

Vishay Siliconix

MOSFET N-CH 250V 2.8A/4.1A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250 V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -