Pagina 51 - Prodotti Toshiba Semiconductor and Storage

Numero di parte	Produttore	Descrizione	pacchetto	Azione
TK20N60W5,S1VF	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	pacchetto: TO-247-3	Azione6.384
TK10A80E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	pacchetto: TO-220-3 Full Pack, Isolated Tab	Azione4.784
SSM3K335R,LF	Toshiba Semiconductor and Storage	MOSFET N CH 30V 6A SOT-23F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	pacchetto: SOT-23-3 Flat Leads	Azione101.988
SSM3K333R,LF	Toshiba Semiconductor and Storage	MOSFET N CH 30V 6A 2-3Z1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 436pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	pacchetto: SOT-23-3 Flat Leads	Azione127.020
2SA1020-O,CKF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	pacchetto: TO-226-3, TO-92-3 Long Body	Azione5.584
RN1103ACT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	pacchetto: SC-101, SOT-883	Azione5.840
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	pacchetto: SC-70, SOT-323	Azione7.776
RN1909(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione7.008
RN4905,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione25.656
1SV229TPH3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 15V USC Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz Capacitance Ratio: 2.5 Capacitance Ratio Condition: C2/C10 Voltage - Peak Reverse (Max): 15V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC	pacchetto: SC-76, SOD-323	Azione5.936
CTS05S40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 42pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	pacchetto: SOD-882	Azione5.328
TC62D902FG(C8,ELHZ	Toshiba Semiconductor and Storage	IC CNTRLR ISOLATED 8SOP Type: AC DC Offline Switcher Topology: Flyback Internal Switch(s): No Number of Outputs: 1 Voltage - Supply (Min): 1.8V Voltage - Supply (Max): 25V Voltage - Output: 15V Current - Output / Channel: - Frequency: 200kHz Dimming: Triac Applications: Lighting Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.173", 4.40mm Width)	Azione2.496
TB62D786FTG,EL	Toshiba Semiconductor and Storage	IC LED DRIVER 24VQFN Type: Linear Topology: - Internal Switch(s): Yes Number of Outputs: 9 Voltage - Supply (Min): 7V Voltage - Supply (Max): 28V Voltage - Output: 28V Current - Output / Channel: 40mA Frequency: - Dimming: PWM Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Supplier Device Package: 24-VQFN (4x4)	pacchetto: 24-VFQFN Exposed Pad	Azione6.016
TC58CVG0S3HRAIG	Toshiba Semiconductor and Storage	1GB SERIAL NAND 24NM WSON8 3.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 155µs Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	pacchetto: 8-WDFN Exposed Pad	Azione2.448
74VHC595FT	Toshiba Semiconductor and Storage	IC REGISTER SHIFT 8-BIT 16TSSOP Logic Type: Shift Register Output Type: Tri-State Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel, Serial Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	pacchetto: 16-TSSOP (0.173", 4.40mm Width)	Azione6.752
74HCT244D(BJ)	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 5.5V 20SOIC Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 6mA, 6mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	pacchetto: 20-SOIC (0.295", 7.50mm Width)	Azione19.044
TL3GB-NW0,L	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5000K 2SMD Color: White, Cool CCT (K): 5000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 77 lm (69 lm ~ 86 lm) Current - Test: 100mA Voltage - Forward (Vf) (Typ): 5.76V Lumens/Watt @ Current - Test: 134 lm/W CRI (Color Rendering Index): 70 Current - Max: 200mA Viewing Angle: - Mounting Type: Surface Mount Package / Case: 1212 (3030 Metric) Supplier Device Package: 3030 Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm) Height - Seated (Max): 0.030" (0.77mm)	pacchetto: 1212 (3030 Metric)	Azione5.940
TLP170A(TP,F)	Toshiba Semiconductor and Storage	IC PHOTORELAY MOSFET 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 400mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	pacchetto: 4-SOP (0.173", 4.40mm)	Azione3.420
TLP172A(F)	Toshiba Semiconductor and Storage	PHOTOCOUPLER PHOTORELAY 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 400mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	pacchetto: 4-SOP (0.173", 4.40mm)	Azione5.040
TLP240G(TP1,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 100MA 350V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 100mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 350 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SMD (0.300", 7.62mm) Supplier Device Package: 4-SMD Relay Type: Relay	pacchetto: 4-SMD (0.300", 7.62mm)	Azione22.266
TCR2EE185,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.85V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione6.224
1SS360-T5L-F-T	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA SSM Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	pacchetto: -	Request a Quote
RN2910-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: -	Azione18.000
TPW5200FNH-L1Q	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 142W (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerWDFN	pacchetto: -	Azione14.466
TC74AC273FT-EL	Toshiba Semiconductor and Storage	IC FF D-TYPE SNGL 8BIT 20TSSOP Function: Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 150 MHz Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 8 µA Input Capacitance: 5 pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	pacchetto: -	Azione5.940
TCR3UM185A-LF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.457V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	pacchetto: -	Azione29.955
TK10A60E-S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	pacchetto: -	Request a Quote
CUS357-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: 11pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	pacchetto: -	Azione27.264

TK20N60W5,S1VF

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

pacchetto: TO-247-3

Azione6.384

TK10A80E,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

Azione4.784

SSM3K335R,LF

Toshiba Semiconductor and Storage

MOSFET N CH 30V 6A SOT-23F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 38 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

pacchetto: SOT-23-3 Flat Leads

Azione101.988

SSM3K333R,LF

Toshiba Semiconductor and Storage

MOSFET N CH 30V 6A 2-3Z1A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 436pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

pacchetto: SOT-23-3 Flat Leads

Azione127.020

2SA1020-O,CKF(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

pacchetto: TO-226-3, TO-92-3 Long Body

Azione5.584

RN1103ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

pacchetto: SC-101, SOT-883

Azione5.840

2SC5095-R(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

pacchetto: SC-70, SOT-323

Azione7.776

RN1909(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione7.008

RN4905,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione25.656

1SV229TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 15V USC

Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio: 2.5
Capacitance Ratio Condition: C2/C10
Voltage - Peak Reverse (Max): 15V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC

pacchetto: SC-76, SOD-323

Azione5.936

CTS05S40,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 500MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 10V
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

pacchetto: SOD-882

Azione5.328

TC62D902FG(C8,ELHZ

Toshiba Semiconductor and Storage

IC CNTRLR ISOLATED 8SOP

Type: AC DC Offline Switcher
Topology: Flyback
Internal Switch(s): No
Number of Outputs: 1
Voltage - Supply (Min): 1.8V
Voltage - Supply (Max): 25V
Voltage - Output: 15V
Current - Output / Channel: -
Frequency: 200kHz
Dimming: Triac
Applications: Lighting
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.173", 4.40mm Width)

Azione2.496

TB62D786FTG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER 24VQFN

Type: Linear
Topology: -
Internal Switch(s): Yes
Number of Outputs: 9
Voltage - Supply (Min): 7V
Voltage - Supply (Max): 28V
Voltage - Output: 28V
Current - Output / Channel: 40mA
Frequency: -
Dimming: PWM
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: 24-VQFN (4x4)

pacchetto: 24-VFQFN Exposed Pad

Azione6.016

TC58CVG0S3HRAIG

Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM WSON8 3.3V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: -
Access Time: 155µs
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

pacchetto: 8-WDFN Exposed Pad

Azione2.448

74VHC595FT

Toshiba Semiconductor and Storage

IC REGISTER SHIFT 8-BIT 16TSSOP

Logic Type: Shift Register
Output Type: Tri-State
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel, Serial
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

pacchetto: 16-TSSOP (0.173", 4.40mm Width)

Azione6.752

74HCT244D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V 20SOIC

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 6mA, 6mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

pacchetto: 20-SOIC (0.295", 7.50mm Width)

Azione19.044

TL3GB-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

Color: White, Cool
CCT (K): 5000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 77 lm (69 lm ~ 86 lm)
Current - Test: 100mA
Voltage - Forward (Vf) (Typ): 5.76V
Lumens/Watt @ Current - Test: 134 lm/W
CRI (Color Rendering Index): 70
Current - Max: 200mA
Viewing Angle: -
Mounting Type: Surface Mount
Package / Case: 1212 (3030 Metric)
Supplier Device Package: 3030
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Height - Seated (Max): 0.030" (0.77mm)

pacchetto: 1212 (3030 Metric)

Azione5.940

TLP170A(TP,F)

Toshiba Semiconductor and Storage

IC PHOTORELAY MOSFET 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 400mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

pacchetto: 4-SOP (0.173", 4.40mm)

Azione3.420

TLP172A(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 400mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

pacchetto: 4-SOP (0.173", 4.40mm)

Azione5.040

TLP240G(TP1,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 100MA 350V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 100mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SMD (0.300", 7.62mm)
Supplier Device Package: 4-SMD
Relay Type: Relay

pacchetto: 4-SMD (0.300", 7.62mm)

Azione22.266

TCR2EE185,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.85V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione6.224

1SS360-T5L-F-T

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SSM

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

pacchetto: -

Request a Quote

RN2910-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: -

Azione18.000

TPW5200FNH-L1Q

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-DSOP Advance
Package / Case: 8-PowerWDFN

pacchetto: -

Azione14.466

TC74AC273FT-EL

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20TSSOP

Function: Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 150 MHz
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Input Capacitance: 5 pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

pacchetto: -

Azione5.940

TCR3UM185A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.457V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

pacchetto: -

Azione29.955

TK10A60E-S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

pacchetto: -

Request a Quote

CUS357-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Capacitance @ Vr, F: 11pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

pacchetto: -

Azione27.264