|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220NIS
- Package / Case: TO-220-3 Full Pack
|
pacchetto: TO-220-3 Full Pack |
Azione5.488 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 1000V 4A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
pacchetto: TO-220-3 |
Azione4.768 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A SOP8 2-6J1B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
|
pacchetto: 8-SOIC (0.173", 4.40mm Width) |
Azione6.496 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 7.2A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 114 mOhm @ 3.6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
pacchetto: 8-PowerVDFN |
Azione5.536 |
|
|
|
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 150A
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
|
pacchetto: 8-PowerVDFN |
Azione41.244 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 200MW SMINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 300MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione27.600 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS RF NPN 10V 1GHz SSM
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
- Gain: 1.4dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
- Current - Collector (Ic) (Max): 15mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
pacchetto: SC-75, SOT-416 |
Azione5.952 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 30MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 30mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.976 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 5V 200MA ESV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
|
pacchetto: SOT-553 |
Azione7.776 |
|
|
|
Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 16SSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: PWM, Serial
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 800mA
- Voltage - Supply: 2.7 V ~ 5.5 V
- Voltage - Load: 2.5 V ~ 13.5 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-SSOP
|
pacchetto: 16-LSSOP (0.173", 4.40mm Width) |
Azione55.446 |
|
|
|
Toshiba Semiconductor and Storage |
BUS TRANCEIVER WCSP6
- Translator Type: Voltage Level
- Channel Type: Bidirectional
- Number of Circuits: 1
- Channels per Circuit: 1
- Voltage - VCCA: 1.2V ~ 3.6V
- Voltage - VCCB: 1.2V ~ 3.6V
- Input Signal: -
- Output Signal: -
- Output Type: Non-Inverted
- Data Rate: 180Mbps
- Operating Temperature: -40°C ~ 85°C (TA)
- Features: Auto-Direction Sensing
- Mounting Type: Surface Mount
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPB (0.80x1.2)
|
pacchetto: 6-UFBGA, WLCSP |
Azione2.976 |
|
|
|
Toshiba Semiconductor and Storage |
IC INV HEX SCHMITT TRIG 14-TSSOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.9 V ~ 1.65 V
- Logic Level - High: 2.2 V ~ 3.85 V
- Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
|
pacchetto: 14-TSSOP (0.173", 4.40mm Width) |
Azione2.224 |
|
|
|
Toshiba Semiconductor and Storage |
IC INVERTER 8-SSOP
- Logic Type: Inverter
- Number of Circuits: 3
- Number of Inputs: 3
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.5V
- Logic Level - High: 1.5V
- Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: SM8
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
|
pacchetto: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Azione7.184 |
|
|
|
Toshiba Semiconductor and Storage |
IC MUX/DEMUX DUAL 4X1 16TSSOP
- Switch Circuit: SP4T
- Multiplexer/Demultiplexer Circuit: 4:1
- Number of Circuits: 2
- On-State Resistance (Max): 37 Ohm
- Channel-to-Channel Matching (ΔRon): 5 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 5.5 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 12ns, 12ns
- -3db Bandwidth: 230MHz
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 0.5pF, 13.1pF
- Current - Leakage (IS(off)) (Max): 100nA
- Crosstalk: -45dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOPB
|
pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione7.408 |
|
|
|
Toshiba Semiconductor and Storage |
IC MUX 8:1 4 OHM 16SOIC
- Switch Circuit: -
- Multiplexer/Demultiplexer Circuit: 8:1
- Number of Circuits: 1
- On-State Resistance (Max): 130 Ohm
- Channel-to-Channel Matching (ΔRon): 4 Ohm
- Voltage - Supply, Single (V+): 2 V ~ 6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 34ns, 32ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 10pF
- Current - Leakage (IS(off)) (Max): 1µA
- Crosstalk: -50dB @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
pacchetto: 16-SOIC (0.154", 3.90mm Width) |
Azione19.482 |
|
|
|
Toshiba Semiconductor and Storage |
TVS DIODE 5VWM USV
- Type: Zener
- Unidirectional Channels: 4
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V
- Voltage - Breakdown (Min): 6.4V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 45pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
|
pacchetto: 5-TSSOP, SC-70-5, SOT-353 |
Azione24.324 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET OUT 3MA 4-SOP
- Circuit: SPST-NC (1 Form B)
- Output Type: AC, DC
- On-State Resistance (Max): 25 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 4-SOP (0.173", 4.40mm)
- Supplier Device Package: 4-SOP (2.54mm)
- Relay Type: Relay
|
pacchetto: 4-SOP (0.173", 4.40mm) |
Azione3.580 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 3.75KV TRANS 6-SO 4 LEAD
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
|
pacchetto: 6-SMD (4 Leads), Gull Wing |
Azione7.182 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATR 5KV TRANSISTOR 4-DIP
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 200% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
|
pacchetto: 4-DIP (0.300", 7.62mm) |
Azione16.932 |
|
|
|
Toshiba Semiconductor and Storage |
2 PHASE UNIPOLAR STEPPING MOTOR
- Motor Type - Stepper: Unipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 40 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 24-SDIP (0.300", 7.62mm)
- Supplier Device Package: 24-SDIP
|
pacchetto: 24-SDIP (0.300", 7.62mm) |
Azione16.140 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINE 1.1V 500MA 5DFNB
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.14V @ 500mA
- Current - Output: 500mA
- Current - Quiescent (Iq): 36µA
- Current - Supply (Max): -
- PSRR: 98dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
|
pacchetto: 4-XDFN Exposed Pad |
Azione36.006 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 18A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
LDO REG VOUT=3.3V IOUT=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.18V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 60 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
|
pacchetto: - |
Azione17.913 |
|
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
pacchetto: - |
Azione75 |
|
|
|
Toshiba Semiconductor and Storage |
LDO REG IOUT: 300MA VIN: 6V VOUT
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.75V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.573V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680 nA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
|
pacchetto: - |
Azione59.670 |
|
|
|
Toshiba Semiconductor and Storage |
PB-F POWER TRANSISTOR TO-126N PC
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
|
pacchetto: - |
Azione585 |
|
|
|
Toshiba Semiconductor and Storage |
STEPPER MOTOR DRIVER, 50V, 3A, 1
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: -
- Technology: BiCDMOS
- Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
- Applications: General Purpose
- Current - Output: 3A
- Voltage - Supply: 8.2V ~ 44V
- Voltage - Load: 50V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5x5)
|
pacchetto: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A VS-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 330mW (Ta)
- Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VS-8 (2.9x1.5)
- Package / Case: 8-SMD, Flat Lead
|
pacchetto: - |
Request a Quote |
|