Prodotti Microsemi Corporation - Transistor - FET, MOSFET - Singoli

APT53N60SC6

Microsemi Corporation

MOSFET N-CH 600V 53A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
• Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT12067JLL

Microsemi Corporation

MOSFET N-CH 1200V 17A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 17A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

APT12067B2LLG

Microsemi Corporation

MOSFET N-CH 1200V 18A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 565W (Tc)
• Rds On (Max) @ Id, Vgs: 670 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX? [B2]
• Package / Case: TO-247-3 Variant

pacchetto: TO-247-3 Variant

APTM100DA18CT1G

Microsemi Corporation

MOSFET N-CH 1000V 40A SP1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 40A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 657W (Tc)
• Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP1
• Package / Case: SP1

pacchetto: SP1

APTC60DAM24CT1G

Microsemi Corporation

MOSFET N-CH 600V 95A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 95A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 462W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APT58M50JCU3

Microsemi Corporation

MOSFET N-CH 500V 58A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 58A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 543W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

APT33N90JCCU3

Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 33A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

APT5014SLLG/TR

Microsemi Corporation

MOSFET N-CH 500V 35A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 403W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

pacchetto: TO-247-3

APT38N60SC6

Microsemi Corporation

MOSFET N-CH 600V 38A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 278W (Tc)
• Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT30N60SC6

Microsemi Corporation

MOSFET N-CH 600V 30A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 960µA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 219W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

APT9F100S

Microsemi Corporation

MOSFET N-CH 1000V 9A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2606pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 337W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT11F80S

Microsemi Corporation

MOSFET N-CH 800V 12A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2471pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 337W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT28F60S

Microsemi Corporation

MOSFET N-CH 600V 30A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5575pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT24F50S

Microsemi Corporation

MOSFET N-CH 500V 24A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 335W (Tc)
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT23F60S

Microsemi Corporation

MOSFET N-CH 600V 23A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 415W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT20F50S

Microsemi Corporation

MOSFET N-CH 500V 20A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT18F60S

Microsemi Corporation

MOSFET N-CH 600V 19A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 335W (Tc)
• Rds On (Max) @ Id, Vgs: 370 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT15F60S

Microsemi Corporation

MOSFET N-CH 600V 16A D3PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 430 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT30N60KC6

Microsemi Corporation

MOSFET N-CH 600V 30A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 3.5V @ 960µA
• Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 219W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 [K]
• Package / Case: TO-220-3

pacchetto: TO-220-3

APTM50UM25SG

Microsemi Corporation

MOSFET N-CH 500V 149A J3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 149A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 17500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: Module
• Package / Case: J3 Module

pacchetto: J3 Module

APTM50UM19SG

Microsemi Corporation

MOSFET N-CH 500V 163A J3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 163A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1136W (Tc)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 81.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: Module
• Package / Case: J3 Module

pacchetto: J3 Module

APTM50SKM38TG

Microsemi Corporation

MOSFET N-CH 500V 90A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APTM50SKM35TG

Microsemi Corporation

MOSFET N-CH 500V 99A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 99A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 781W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APTM50DAM38TG

Microsemi Corporation

MOSFET N-CH 500V 90A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APTM50DAM38CTG

Microsemi Corporation

MOSFET N-CH 500V 90A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 694W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APTM50DAM35TG

Microsemi Corporation

MOSFET N-CH 500V 99A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 99A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 781W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

pacchetto: SP4

APTM20UM09SG

Microsemi Corporation

MOSFET N-CH 200V 195A J3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 195A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 217nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 780W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: Module
• Package / Case: J3 Module

pacchetto: J3 Module

APTM20UM05SG

Microsemi Corporation

MOSFET N-CH 200V 317A J3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 317A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1136W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: Module
• Package / Case: J3 Module

pacchetto: J3 Module