Pagina 14 - Prodotti Microsemi Corporation - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Microsemi Corporation - Transistor - FET, MOSFET - Singoli

Record 613
Pagina  14/22
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APTM20SKM10TG
Microsemi Corporation

MOSFET N-CH 200V 175A SP4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4
pacchetto: SP4
Azione5.024
MOSFET (Metal Oxide)
200V
175A
10V
5V @ 5mA
224nC @ 10V
13700pF @ 25V
±30V
-
694W (Tc)
12 mOhm @ 87.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM20DAM10TG
Microsemi Corporation

MOSFET N-CH 200V 175A SP4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4
pacchetto: SP4
Azione3.984
MOSFET (Metal Oxide)
200V
175A
10V
5V @ 5mA
224nC @ 10V
13700pF @ 25V
±30V
-
694W (Tc)
12 mOhm @ 87.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM120UM95FAG
Microsemi Corporation

MOSFET N-CH 1200V 103A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 103A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1122nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 30900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2272W (Tc)
  • Rds On (Max) @ Id, Vgs: 114 mOhm @ 51.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione2.672
MOSFET (Metal Oxide)
1200V
103A
10V
5V @ 15mA
1122nC @ 10V
30900pF @ 25V
±30V
-
2272W (Tc)
114 mOhm @ 51.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120U10DAG
Microsemi Corporation

MOSFET N-CH 1200V 116A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 116A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione3.328
MOSFET (Metal Oxide)
1200V
116A
10V
5V @ 20mA
1100nC @ 10V
28900pF @ 25V
±30V
-
3290W (Tc)
120 mOhm @ 58A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120SK68T1G
Microsemi Corporation

MOSFET N-CH 1200V 15A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione6.928
MOSFET (Metal Oxide)
1200V
15A
10V
5V @ 2.5mA
260nC @ 10V
6696pF @ 25V
±30V
-
357W (Tc)
816 mOhm @ 12A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM120SK56T1G
Microsemi Corporation

MOSFET N-CH 1200V 18A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 18A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione4.656
MOSFET (Metal Oxide)
1200V
18A
10V
5V @ 2.5mA
300nC @ 10V
7736pF @ 25V
±30V
-
390W (Tc)
672 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM120SK29TG
Microsemi Corporation

MOSFET N-CH 1200V 34A SP4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4
pacchetto: SP4
Azione4.480
MOSFET (Metal Oxide)
1200V
34A
10V
5V @ 5mA
374nC @ 10V
10300pF @ 25V
±30V
-
780W (Tc)
348 mOhm @ 17A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM120SK15G
Microsemi Corporation

MOSFET N-CH 1200V 60A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione5.504
MOSFET (Metal Oxide)
1200V
60A
10V
5V @ 10mA
748nC @ 10V
20600pF @ 25V
±30V
-
1250W (Tc)
175 mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120DA68T1G
Microsemi Corporation

MOSFET N-CH 1200V 15A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione5.936
MOSFET (Metal Oxide)
1200V
15A
10V
5V @ 2.5mA
260nC @ 10V
6696pF @ 25V
±30V
-
357W (Tc)
816 mOhm @ 12A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM120DA56T1G
Microsemi Corporation

MOSFET N-CH 1200V 18A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 18A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione3.520
MOSFET (Metal Oxide)
1200V
18A
10V
5V @ 2.5mA
300nC @ 10V
7736pF @ 25V
±30V
-
390W (Tc)
672 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM120DA29TG
Microsemi Corporation

MOSFET N-CH 1200V 34A SP4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4
pacchetto: SP4
Azione2.176
MOSFET (Metal Oxide)
1200V
34A
10V
5V @ 5mA
374nC @ 10V
10300pF @ 25V
±30V
-
780W (Tc)
348 mOhm @ 17A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM120DA15G
Microsemi Corporation

MOSFET N-CH 1200V 60A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione3.824
MOSFET (Metal Oxide)
1200V
60A
10V
5V @ 10mA
748nC @ 10V
20600pF @ 25V
±30V
-
1250W (Tc)
175 mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100U13SG
Microsemi Corporation

MOSFET N-CH 1000V 65A J3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 32.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: Module
  • Package / Case: J3 Module
pacchetto: J3 Module
Azione3.776
MOSFET (Metal Oxide)
1000V
65A
10V
4V @ 10mA
2000nC @ 10V
31600pF @ 25V
±30V
-
1250W (Tc)
145 mOhm @ 32.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
Module
J3 Module
APTM100SK40T1G
Microsemi Corporation

MOSFET N-CH 1000V 20A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione6.592
MOSFET (Metal Oxide)
1000V
20A
10V
5V @ 2.5mA
260nC @ 10V
6800pF @ 25V
±30V
-
357W (Tc)
480 mOhm @ 16A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM100DA40T1G
Microsemi Corporation

MOSFET N-CH 1000V 20A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 16A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione2.592
MOSFET (Metal Oxide)
1000V
20A
10V
5V @ 2.5mA
260nC @ 10V
6800pF @ 25V
±30V
-
357W (Tc)
480 mOhm @ 16A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM100DA18T1G
Microsemi Corporation

MOSFET N-CH 1000V 40A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 657W (Tc)
  • Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione7.056
MOSFET (Metal Oxide)
1000V
40A
10V
5V @ 2.5mA
570nC @ 10V
14800pF @ 25V
±30V
-
657W (Tc)
216 mOhm @ 33A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC80SK15T1G
Microsemi Corporation

MOSFET N-CH 800V 28A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione4.736
MOSFET (Metal Oxide)
800V
28A
10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
±30V
-
277W (Tc)
150 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC80DA15T1G
Microsemi Corporation

MOSFET N-CH 800V 28A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione5.024
MOSFET (Metal Oxide)
800V
28A
10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
±30V
-
277W (Tc)
150 mOhm @ 14A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC60SKM35T1G
Microsemi Corporation

MOSFET N-CH 600V 72A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 416W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione2.448
MOSFET (Metal Oxide)
600V
72A
10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
±20V
-
416W (Tc)
35 mOhm @ 72A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC60DAM35T1G
Microsemi Corporation

MOSFET N-CH 600V 72A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 416W (Tc)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
pacchetto: SP1
Azione6.912
MOSFET (Metal Oxide)
600V
72A
10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
±20V
-
416W (Tc)
35 mOhm @ 72A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT50N60JCU2
Microsemi Corporation

MOSFET N-CH 600V 52A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 52A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione3.296
MOSFET (Metal Oxide)
600V
52A
10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
±20V
-
290W (Tc)
45 mOhm @ 22.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
hot APT8M80K
Microsemi Corporation

MOSFET N-CH 800V 8A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione103.464
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
5V @ 500µA
43nC @ 10V
1335pF @ 25V
±30V
-
225W (Tc)
1.35 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT8024LLLG
Microsemi Corporation

MOSFET N-CH 800V 31A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 565W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione5.616
MOSFET (Metal Oxide)
800V
31A (Tc)
10V
5V @ 2.5mA
160nC @ 10V
4670pF @ 25V
±30V
-
565W (Tc)
240 mOhm @ 15.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APT8024JLL
Microsemi Corporation

MOSFET N-CH 800V 29A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 29A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione4.192
MOSFET (Metal Oxide)
800V
29A
10V
5V @ 2.5mA
160nC @ 10V
4670pF @ 25V
±30V
-
460W (Tc)
240 mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT8014JLL
Microsemi Corporation

MOSFET N-CH 800V 42A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 42A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7238pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione5.088
MOSFET (Metal Oxide)
800V
42A
10V
5V @ 5mA
285nC @ 10V
7238pF @ 25V
±30V
-
595W (Tc)
140 mOhm @ 21A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT7F80K
Microsemi Corporation

MOSFET N-CH 800V 7A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.120
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
5V @ 500µA
43nC @ 10V
1335pF @ 25V
±30V
-
225W (Tc)
1.5 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT6M100K
Microsemi Corporation

MOSFET N-CH 1000V 6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione4.080
MOSFET (Metal Oxide)
1000V
6A (Tc)
10V
5V @ 1mA
43nC @ 10V
1410pF @ 25V
±30V
-
225W (Tc)
2.5 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT60M80JVR
Microsemi Corporation

MOSFET N-CH 600V 55A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 55A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione5.008
MOSFET (Metal Oxide)
600V
55A
10V
4V @ 5mA
870nC @ 10V
14500pF @ 25V
±30V
-
568W (Tc)
80 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC