Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-204AA, TO-3 |
Azione6.832 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 1.22 Ohm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Microsemi Corporation |
MOSFET N-CH 200V 9A
|
pacchetto: TO-204AA, TO-3 |
Azione6.976 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 490 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 14A
|
pacchetto: TO-204AA, TO-3 |
Azione5.840 |
|
MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 210 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Microsemi Corporation |
MOSFET P-CH 100V 18A
|
pacchetto: TO-267AB |
Azione3.472 |
|
MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | - | ±20V | - | 4W (Ta), 125W (Tc) | 220 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Microsemi Corporation |
MOSFET P-CH 100V 18A
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione3.296 |
|
MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | - | ±20V | - | 4W (Ta), 125W (Tc) | 220 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-267AB |
Azione4.128 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 515 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione6.880 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 515 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-267AB |
Azione2.944 |
|
MOSFET (Metal Oxide) | 400V | 14A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione3.488 |
|
MOSFET (Metal Oxide) | 400V | 14A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-267AB |
Azione6.544 |
|
MOSFET (Metal Oxide) | 200V | 27.4A (Tc) | 10V | 4V @ 250µA | 115nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 105 mOhm @ 27.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione6.880 |
|
MOSFET (Metal Oxide) | 200V | 27.4A (Tc) | 10V | 4V @ 250µA | 115nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 105 mOhm @ 27.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET N-CH 100V 34A
|
pacchetto: TO-267AB |
Azione5.392 |
|
MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 4V @ 250µA | 125nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 81 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Microsemi Corporation |
MOSFET N-CH 100V 34A
|
pacchetto: TO-254-3, TO-254AA (Straight Leads) |
Azione4.400 |
|
MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 4V @ 250µA | 125nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 81 mOhm @ 34A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET N-CH 100V 1.69A
|
pacchetto: TO-205AF Metal Can |
Azione6.928 |
|
MOSFET (Metal Oxide) | 100V | 1.69A (Tc) | 5V | 2V @ 1mA | 5nC @ 5V | - | ±10V | - | 8.33W (Tc) | 1.4 Ohm @ 1.07A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: 18-BQFN Exposed Pad |
Azione2.512 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-205AF Metal Can |
Azione6.112 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: 18-BQFN Exposed Pad |
Azione4.496 |
|
MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 4V @ 250µA | 34.75nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.1 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-205AD, TO-39-3 Metal Can |
Azione6.960 |
|
MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 4V @ 250µA | 34.75nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.1 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AD, TO-39-3 Metal Can |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: 18-BQFN Exposed Pad |
Azione7.568 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 4V @ 250µA | 42.07nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 420 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-205AF Metal Can |
Azione9.324 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 4V @ 250µA | 42.07nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 420 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH 100V 8A
|
pacchetto: 18-BQFN Exposed Pad |
Azione2.976 |
|
MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 4V @ 250µA | 28.51nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 195 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH 100V 8A
|
pacchetto: TO-205AD, TO-39-3 Metal Can |
Azione62.568 |
|
MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 4V @ 250µA | 28.51nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 195 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AD, TO-39-3 Metal Can |
||
Microsemi Corporation |
MOSFET N-CH 18-LCC
|
pacchetto: 18-BQFN Exposed Pad |
Azione2.736 |
|
MOSFET (Metal Oxide) | 200V | 2.8A (Tc) | 10V | 4V @ 250µA | 14.3nC @ 10V | - | ±20V | - | 800mW (Tc) | 850 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH TO-205AF TO-39
|
pacchetto: TO-205AF Metal Can |
Azione6.156 |
|
MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 4V @ 250µA | 14.3nC @ 10V | - | ±20V | - | 800mW (Tc) | 850 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH 18-LCC
|
pacchetto: 18-BQFN Exposed Pad |
Azione6.496 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | - | ±20V | - | 800mW (Tc) | 350 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH TO-205AF TO-39
|
pacchetto: TO-205AF Metal Can |
Azione6.752 |
|
MOSFET (Metal Oxide) | 100V | 6A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | - | ±20V | - | 800mW (Tc) | 350 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
||
Microsemi Corporation |
MOSFET N-CH 18-LCC
|
pacchetto: 18-BQFN Exposed Pad |
Azione7.968 |
|
MOSFET (Metal Oxide) | 200V | 2.25A (Tc) | 10V | 4V @ 250µA | 8.6nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 1.6 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
Microsemi Corporation |
MOSFET N-CH TO-205AF TO-39
|
pacchetto: TO-205AF Metal Can |
Azione4.704 |
|
MOSFET (Metal Oxide) | 200V | 2.25A (Tc) | 10V | 4V @ 250µA | 8.6nC @ 10V | - | ±20V | - | 800mW (Ta), 15W (Tc) | 1.6 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |