Pagina 802 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  802/2.220
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S40410161B1B2I013
Cypress Semiconductor Corp

IC FLASH 16GBIT 200MHZ 100BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LBGA (14x18)
pacchetto: 100-LBGA
Azione3.408
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
200MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (14x18)
MT29F32G08AECBBH1-12:B TR
Micron Technology Inc.

IC FLASH 32GBIT 83MHZ 100VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VBGA
  • Supplier Device Package: 100-VBGA (12x18)
pacchetto: 100-VBGA
Azione5.856
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
83MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-VBGA
100-VBGA (12x18)
MT41K1G4THD-15E:D
Micron Technology Inc.

IC SDRAM 4GBIT 667MHZ 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (1G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.5ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (9x11.5)
pacchetto: 78-TFBGA
Azione6.736
DRAM
SDRAM - DDR3
4Gb (1G x 4)
Parallel
667MHz
-
13.5ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9x11.5)
IDT71T016SA12PHG
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: 44-TSOP (0.400", 10.16mm Width)
Azione7.248
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot IS61LV12824-10B
ISSI, Integrated Silicon Solution Inc

IC SRAM 3MBIT 10NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 3Mb (128K x 24)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
pacchetto: 119-BGA
Azione23.940
SRAM
SRAM - Asynchronous
3Mb (128K x 24)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
AT24C16A-10PU-1.8
Microchip Technology

IC EEPROM 16KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 4.5µs
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione3.200
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
4.5µs
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
AT49BV001-12VI
Microchip Technology

IC FLASH 1MBIT 120NS 32VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-VSOP
pacchetto: 32-TFSOP (0.488", 12.40mm Width)
Azione2.672
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
120ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-VSOP
AT49F001-55VI
Microchip Technology

IC FLASH 1MBIT 55NS 32VSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-VSOP
pacchetto: 32-TFSOP (0.488", 12.40mm Width)
Azione6.416
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-VSOP
PC28F00AP33EFA
Micron Technology Inc.

IC FLASH 1GBIT 95NS 64EASYBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 95ns
  • Access Time: 95ns
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-EasyBGA (8x10)
pacchetto: 64-TBGA
Azione5.888
FLASH
FLASH - NOR
1Gb (64M x 16)
Parallel
52MHz
95ns
95ns
2.3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-EasyBGA (8x10)
S34ML04G204BHI010
Cypress Semiconductor Corp

FLASH MEMORY NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-BGA (11x9)
pacchetto: 63-VFBGA
Azione4.608
FLASH
FLASH - NAND
4Gb (512M x 8)
Parallel
-
25ns
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-BGA (11x9)
W98AD2KBJX6E
Winbond Electronics

IC MEMORY SDRAM 1GB 90VFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.536
-
-
-
-
-
-
-
-
-
-
-
-
MT29F1G08ABBDAHC:D TR
Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (10.5x13)
pacchetto: 63-VFBGA
Azione20.652
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (10.5x13)
AT25DF041B-MAHN-T
Adesto Technologies

4MBIT,2X3MM UDFN, 1.65-3.6V, T&R

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 2.5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN
  • Supplier Device Package: 8-UDFN (2x3)
pacchetto: 8-UDFN
Azione4.560
FLASH
FLASH
4Mb (512K x 8)
SPI
104MHz
8µs, 2.5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN
8-UDFN (2x3)
AT25DF021A-SSHNHR-T
Adesto Technologies

IC FLASH 2MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 2.5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.040
FLASH
FLASH
2Mb (256K x 8)
SPI
85MHz
8µs, 2.5ms
-
1.65 V ~ 3.6 V
-40°C ~ 125°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot M48Z58Y-70PC1
STMicroelectronics

IC NVSRAM 64KBIT 70NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-PCDIP, CAPHAT?
pacchetto: 28-DIP Module (0.600", 15.24mm)
Azione10.560
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-PCDIP, CAPHAT?
93C66C/WF15K
Microchip Technology

IC EEPROM 4K SPI 3MHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8, 256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione7.040
EEPROM
EEPROM
4Kb (512 x 8, 256 x 16)
SPI
3MHz
2ms
-
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
MTFC64GANALAM-WT TR
Micron Technology Inc.

MASSFLASH/CONTROLLER 512G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione6.832
-
-
-
-
-
-
-
-
-
-
-
-
S29GL064S70TFI060
Cypress Semiconductor Corp

IC NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
pacchetto: 56-TFSOP (0.724", 18.40mm Width)
Azione4.752
-
-
-
-
-
-
-
-
-
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
CG8413AA
Cypress Semiconductor Corp

IC SRAM ASYNC 85SOJ

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione7.552
-
-
-
-
-
-
-
-
-
-
-
-
MT40A1G8SA-062E AIT:E TR
Micron Technology Inc.

IC SDRAM DDR4 8G PAR 78FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 19ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (7.5x11)
pacchetto: 78-TFBGA
Azione4.464
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.6GHz
15ns
19ns
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (7.5x11)
CY7C1041BV33-25ZC
Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 44TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
25ns
25 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
24FC01T-E-ST36KVAO
Microchip Technology

IC EEPROM 1KBIT I2C 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: -
Request a Quote
EEPROM
EEPROM
1Kbit
I2C
1 MHz
5ms
450 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MT53D384M32D2DS-046-WT-E-TR
Micron Technology Inc.

IC DRAM 12GBIT 2.133GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
pacchetto: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
12Gbit
-
2.133 GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
GD5F4GQ4RCYIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 4GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 120 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: -
Request a Quote
FLASH
FLASH - NAND
4Gbit
SPI - Quad I/O
120 MHz
-
-
1.7V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
SN74LS600ADW
Texas Instruments

MEMORY CIRCUIT, 16KX1, TTL

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS46QR81024A-075VBLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.333 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR4
8Gbit
Parallel
1.333 GHz
15ns
18 ns
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
CY7C1019BV33-10VC
Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
10ns
10 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
IS61WV20488FBLL-10BLI
ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed,Async,2Mbx8,10ns

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
pacchetto: -
Request a Quote
SRAM
SRAM - Asynchronous
16Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)