Pagina 707 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  707/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NTD4856NT4G
ON Semiconductor

MOSFET N-CH 25V 13.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2241pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione1.043.940
MOSFET (Metal Oxide)
25V
13.3A (Ta), 89A (Tc)
4.5V, 10V
2.5V @ 250µA
27nC @ 4.5V
2241pF @ 12V
±20V
-
1.33W (Ta), 60W (Tc)
4.7 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTB60N06G
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione12.228
MOSFET (Metal Oxide)
60V
60A (Ta)
10V
4V @ 250µA
81nC @ 10V
3220pF @ 25V
±20V
-
2.4W (Ta), 150W (Tj)
14 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUFA76443S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4115pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.960
MOSFET (Metal Oxide)
60V
75A (Tc)
4.5V, 10V
3V @ 250µA
129nC @ 10V
4115pF @ 25V
±16V
-
260W (Tc)
8 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB630TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.480
MOSFET (Metal Oxide)
200V
9A (Tc)
10V
4V @ 250µA
25nC @ 10V
550pF @ 25V
±25V
-
3.13W (Ta), 78W (Tc)
400 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI45N06S4L08AKSA1
Infineon Technologies

MOSFET N-CH 60V 45A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione4.784
MOSFET (Metal Oxide)
60V
45A (Tc)
4.5V, 10V
2.2V @ 35µA
64nC @ 10V
4780pF @ 25V
±16V
-
71W (Tc)
8.2 mOhm @ 45A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
APTM50UM09FAG
Microsemi Corporation

MOSFET N-CH 500V 497A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 497A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 63300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 248.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
pacchetto: SP6
Azione4.512
MOSFET (Metal Oxide)
500V
497A
10V
5V @ 30mA
1200nC @ 10V
63300pF @ 25V
±30V
-
5000W (Tc)
10 mOhm @ 248.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
IXFX44N80Q3
IXYS

MOSFET N-CH 800V 44A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.864
MOSFET (Metal Oxide)
800V
44A (Tc)
10V
6.5V @ 8mA
185nC @ 10V
9840pF @ 25V
±30V
-
1250W (Tc)
190 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
AOW20S60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione4.272
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4.1V @ 250µA
19.8nC @ 10V
1038pF @ 100V
±30V
-
266W (Tc)
199 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IXTY2N60P
IXYS

MOSFET N-CH 600V 2A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.360
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
5V @ 250µA
7nC @ 10V
240pF @ 25V
±30V
-
55W (Tc)
5.1 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SIE878DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 45A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 12.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (L)
  • Package / Case: 10-PolarPAK? (L)
pacchetto: 10-PolarPAK? (L)
Azione2.912
MOSFET (Metal Oxide)
25V
45A (Tc)
4.5V, 10V
2.2V @ 250µA
36nC @ 10V
1400pF @ 12.5V
±20V
-
5.2W (Ta), 25W (Tc)
5.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (L)
10-PolarPAK? (L)
BUK7Y65-100EX
Nexperia USA Inc.

MOSFET N-CH 100V 19A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1023pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione3.536
MOSFET (Metal Oxide)
100V
19A (Tc)
10V
4V @ 1mA
17.8nC @ 10V
1023pF @ 25V
±20V
-
64W (Tc)
65 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
SIHG21N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 21A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 176 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione13.632
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
4V @ 250µA
84nC @ 10V
2030pF @ 100V
±30V
-
227W (Tc)
176 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
BUK9610-100B,118
Nexperia USA Inc.

MOSFET N-CH 100V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione19.710
MOSFET (Metal Oxide)
100V
75A (Tc)
5V, 10V
2V @ 1mA
86nC @ 5V
11045pF @ 25V
±15V
-
300W (Tc)
9.7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI3443CDV-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 5.97A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione1.150.200
MOSFET (Metal Oxide)
20V
5.97A (Tc)
2.5V, 4.5V
1.5V @ 250µA
12.4nC @ 5V
610pF @ 10V
±12V
-
2W (Ta), 3.2W (Tc)
60 mOhm @ 4.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
hot SI2325DS-T1-GE3
Vishay Siliconix

MOSFET P-CH 150V 0.53A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione397.728
MOSFET (Metal Oxide)
150V
530mA (Ta)
6V, 10V
4.5V @ 250µA
12nC @ 10V
510pF @ 25V
±20V
-
750mW (Ta)
1.2 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SQS850EN-T1_GE3
Vishay Siliconix

MOSFET N-CH 60V 12A PPAK1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2021 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.5mOhm @ 6.1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
pacchetto: -
Azione5.733
MOSFET (Metal Oxide)
60 V
12A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
2021 pF @ 30 V
±20V
-
33W (Tc)
21.5mOhm @ 6.1A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
NVXR22S90M2SPM
onsemi

SIC 900V 6D MOSFET V-SSDC SPM

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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MCG20P03-TP
Micro Commercial Co

P-CHANNEL MOSFET, DFN3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 21W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN3333
  • Package / Case: 8-VDFN Exposed Pad
pacchetto: -
Azione36.738
MOSFET (Metal Oxide)
30 V
20A
4.5V, 10V
2.5V @ 250µA
28.7 nC @ 10 V
1750 pF @ 15 V
±20V
-
21W (Tc)
20mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN3333
8-VDFN Exposed Pad
2SK1657-T2B-A
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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DMN3110SQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 305.8 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione9.000
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4.5V, 10V
3V @ 250µA
8.6 nC @ 10 V
305.8 pF @ 15 V
±20V
-
740mW (Ta)
73mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
ZXMP10A17GTA
Diodes Incorporated

MOSFET P-CH 100V 1.7A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-4, TO-261AA
pacchetto: -
Azione504
MOSFET (Metal Oxide)
100 V
1.7A (Ta)
6V, 10V
4V @ 250µA
10.7 nC @ 10 V
424 pF @ 50 V
±20V
-
2W (Ta)
350mOhm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
SISH107DN-T1-GE3
Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 34.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8SH
  • Package / Case: PowerPAK® 1212-8SH
pacchetto: -
Azione35.940
MOSFET (Metal Oxide)
30 V
12.6A (Ta), 34.4A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
1400 pF @ 15 V
±20V
-
3.57W (Ta), 26.5W (Tc)
14mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
2SK4084LS
onsemi

2SK4084LS - MOSFET, T14A, 500V,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FI(LS)
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
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MOSFET (Metal Oxide)
500 V
9.6A (Tc)
-
-
38.4 nC @ 10 V
1000 pF @ 30 V
-
-
2W (Ta), 37W (Tc)
520mOhm @ 7A, 10V
150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
IRLS540A
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 8.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
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MOSFET (Metal Oxide)
100 V
17A (Tc)
5V
2V @ 250µA
54 nC @ 5 V
1580 pF @ 25 V
±20V
-
44W (Tc)
58mOhm @ 8.5A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
STP30N65DM6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
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MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
4.75V @ 250µA
46 nC @ 10 V
2000 pF @ 100 V
±25V
-
223W (Tc)
115mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
SI2302A-TP
Micro Commercial Co

MOSFET N-CH 20V 3A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 237 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione150.927
MOSFET (Metal Oxide)
20 V
3A (Tj)
2.5V, 4.5V
1.2V @ 50µA
10 nC @ 4.5 V
237 pF @ 10 V
±8V
-
1.25W
72mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
AUIRFSL3206
International Rectifier

AUTOMOTIVE HEXFET N CHANNEL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
pacchetto: -
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MOSFET (Metal Oxide)
60 V
120A (Tc)
-
4V @ 150µA
170 nC @ 10 V
6540 pF @ 50 V
-
-
300W (Tc)
3mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
DMP2036UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
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MOSFET (Metal Oxide)
20 V
6A (Ta)
1.8V, 4.5V
1V @ 250µA
20.5 nC @ 4.5 V
1808 pF @ 15 V
±8V
-
1.1W (Ta)
30mOhm @ 6.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6