Pagina 624 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  624/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF9392PBF
Infineon Technologies

MOSFET P-CH 30V 9.8A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 7.8A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.072
MOSFET (Metal Oxide)
30V
9.8A (Ta)
10V, 20V
2.4V @ 25µA
14nC @ 4.5V
1270pF @ 25V
±25V
-
2.5W (Ta)
12.1 mOhm @ 7.8A, 20V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot IRF6674TR1PBF
Infineon Technologies

MOSFET N-CH 60V 13.4A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MZ
  • Package / Case: DirectFET? Isometric MZ
pacchetto: DirectFET? Isometric MZ
Azione4.432
MOSFET (Metal Oxide)
60V
13.4A (Ta), 67A (Tc)
10V
4.9V @ 100µA
36nC @ 10V
1350pF @ 25V
±20V
-
3.6W (Ta), 89W (Tc)
11 mOhm @ 13.4A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MZ
DirectFET? Isometric MZ
hot IRF7207TR
Infineon Technologies

MOSFET P-CH 20V 5.4A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione1.489.764
MOSFET (Metal Oxide)
20V
5.4A (Tc)
2.7V, 4.5V
700mV @ 250µA
22nC @ 4.5V
780pF @ 15V
±12V
-
2.5W (Tc)
60 mOhm @ 5.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
HUFA75823D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 150V 14A TO-252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione2.100
MOSFET (Metal Oxide)
150V
14A (Tc)
10V
4V @ 250µA
54nC @ 20V
800pF @ 25V
±20V
-
85W (Tc)
150 mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDG326P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.5A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione171.792
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1.5V @ 250µA
7nC @ 4.5V
467pF @ 10V
±8V
-
750mW (Ta)
140 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
hot AUIRF7416QTR
Infineon Technologies

MOSFET P-CH 30V 10A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.04V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione23.928
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
2.04V @ 250µA
92nC @ 10V
1700pF @ 25V
±20V
-
2.5W (Ta)
20 mOhm @ 5.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IPI80N03S4L03AKSA1
Infineon Technologies

MOSFET N-CH 30V 80A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione6.912
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2.2V @ 90µA
140nC @ 10V
9750pF @ 25V
±16V
-
136W (Tc)
2.7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
NVMFS5C442NLWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione4.656
MOSFET (Metal Oxide)
40V
29A (Ta), 130A (Tc)
4.5V, 10V
2V @ 250µA
50nC @ 10V
3100pF @ 25V
±20V
-
3.7W (Ta), 83W (Tc)
2.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot IRL520LPBF
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione40.692
MOSFET (Metal Oxide)
100V
9.2A (Tc)
4V, 5V
2V @ 250µA
12nC @ 5V
490pF @ 25V
±10V
-
60W (Tc)
270 mOhm @ 5.5A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot STD3N40K3
STMicroelectronics

MOSFET N CH 400V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione91.260
MOSFET (Metal Oxide)
400V
2A (Tc)
10V
4.5V @ 50µA
11nC @ 10V
165pF @ 50V
±30V
-
30W (Tc)
3.4 Ohm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9880-55A/CUX
Nexperia USA Inc.

MOSFET N-CH 55V 7A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 8W (Tc)
  • Rds On (Max) @ Id, Vgs: 73 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione6.528
MOSFET (Metal Oxide)
55V
7A (Tc)
4.5V, 10V
2V @ 1mA
11nC @ 5V
584pF @ 25V
±15V
-
8W (Tc)
73 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
BUK7Y10-30B,115
Nexperia USA Inc.

MOSFET N-CH 30V 67A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1183pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione5.584
MOSFET (Metal Oxide)
30V
67A (Tc)
10V
4V @ 1mA
18.8nC @ 10V
1183pF @ 25V
±20V
-
85W (Tc)
10 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
BUK7C10-75AITE,118
Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Azione34.788
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 1mA
121nC @ 10V
4700pF @ 25V
±20V
Current Sensing
272W (Tc)
10 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
TPH7R506NH,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 60V 22A 8-SOP ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione48.078
MOSFET (Metal Oxide)
60V
22A (Ta)
10V
4V @ 300µA
31nC @ 10V
2320pF @ 30V
±20V
-
1.6W (Ta), 45W (Tc)
7.5 mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
BSC035N04LSGATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione147.432
MOSFET (Metal Oxide)
40V
21A (Ta), 100A (Tc)
4.5V, 10V
2V @ 36µA
64nC @ 10V
5100pF @ 20V
±20V
-
2.5W (Ta), 69W (Tc)
3.5 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
IPP030N06NF2SAKMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-U05
  • Package / Case: TO-220-3
pacchetto: -
Azione2.748
MOSFET (Metal Oxide)
60 V
26A (Ta), 119A (Tc)
6V, 10V
3.3V @ 80µA
102 nC @ 10 V
4600 pF @ 30 V
±20V
-
3.8W (Ta), 150W (Tc)
3.05mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-U05
TO-220-3
PMV32UP-MIR
Nexperia USA Inc.

MOSFET P-CH 20V 4A TO236AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta), 4.15W (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 2.4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
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MOSFET (Metal Oxide)
20 V
4A (Ta)
1.8V, 4.5V
950mV @ 250µA
15.5 nC @ 4.5 V
1890 pF @ 10 V
±8V
-
510mW (Ta), 4.15W (Tc)
36mOhm @ 2.4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
NTTFS022N15MC
onsemi

POWER MOSFET, N CHANNEL, 150V, 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: -
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MOSFET (Metal Oxide)
150 V
7.4A (Ta), 37.2A (Tc)
8V, 10V
4.5V @ 100µA
17 nC @ 10 V
1315 pF @ 75 V
±20V
-
1.2W (Ta), 71.4W (Tc)
22mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PQFN (3.3x3.3)
8-PowerWDFN
DMT64M2LPSW-13
Diodes Incorporated

MOSFET N-CH 60V 20.7A/100A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione7.404
MOSFET (Metal Oxide)
60 V
20.7A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 250µA
46.7 nC @ 10 V
2799 pF @ 30 V
±20V
-
2.8W (Ta), 83.3W (Tc)
4.4mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
IRFD322
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip
  • Package / Case: 4-DIP (0.300", 7.62mm)
pacchetto: -
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MOSFET (Metal Oxide)
400 V
400mA (Tc)
10V
4V @ 250µA
15 nC @ 10 V
455 pF @ 25 V
±20V
-
1W (Tc)
2.5Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip
4-DIP (0.300", 7.62mm)
BS170-D26Z
onsemi

MOSFET N-CH 60V 500MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
pacchetto: -
Azione86.871
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
3V @ 1mA
-
40 pF @ 10 V
±20V
-
830mW (Ta)
5Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
GSFAT0600
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 0.30A, 60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.44 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
pacchetto: -
Azione47.355
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2.5V @ 250µA
0.44 nC @ 4.5 V
50 pF @ 25 V
±20V
-
150mW (Ta)
3Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
R6535KNZ4C13
Rohm Semiconductor

650V 35A TO-247, HIGH-SPEED SWIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
pacchetto: -
Azione1.068
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
5V @ 1.21mA
72 nC @ 10 V
3000 pF @ 25 V
±20V
-
379W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
NTMTS0D4N04CTXG
onsemi

MOSFET N-CH 40V 79.8A/558A 8DFNW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 244W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione8.997
MOSFET (Metal Oxide)
40 V
79.8A (Ta), 558A (Tc)
10V
4V @ 250µA
251 nC @ 10 V
16500 pF @ 20 V
±20V
-
5W (Ta), 244W (Tc)
0.45mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-DFNW (8.3x8.4)
8-PowerTDFN
SI3483CDV-T1-BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
Azione11.082
MOSFET (Metal Oxide)
30 V
6.1A (Ta), 8A (Tc)
4.5V, 10V
3V @ 250µA
33 nC @ 10 V
1000 pF @ 15 V
±20V
-
2W (Ta), 4.2W (Tc)
34mOhm @ 6.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
IRFR024TRPBF-BE3
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione9.966
MOSFET (Metal Oxide)
60 V
14A (Tc)
-
4V @ 250µA
25 nC @ 10 V
640 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
100mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB03N03LAG
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
25 V
80A (Tc)
4.5V, 10V
2V @ 100µA
57 nC @ 5 V
7027 pF @ 15 V
±20V
-
150W (Tc)
2.7mOhm @ 55A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM150NB04CR-RLG
Taiwan Semiconductor Corporation

MOSFET N-CH 40V 10A/41A 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5.2x5.75)
  • Package / Case: 8-PowerLDFN
pacchetto: -
Azione15.000
MOSFET (Metal Oxide)
40 V
10A (Ta), 41A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
1092 pF @ 20 V
±20V
-
3.1W (Ta), 56W (Tc)
15mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-PDFN (5.2x5.75)
8-PowerLDFN