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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  427/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF5803TR
Infineon Technologies

MOSFET P-CH 40V 3.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione2.538.852
MOSFET (Metal Oxide)
40V
3.4A (Ta)
4.5V, 10V
3V @ 250µA
37nC @ 10V
1110pF @ 25V
±20V
-
2W (Ta)
112 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro6?(TSOP-6)
SOT-23-6 Thin, TSOT-23-6
AOD4144_002
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.232
MOSFET (Metal Oxide)
30V
13A (Ta), 55A (Tc)
4.5V, 10V
2.4V @ 250µA
28nC @ 10V
1430pF @ 15V
±20V
-
2.3W (Ta), 50W (Tc)
8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN014-60LS,115
NXP

MOSFET N-CH 60V QFN3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1264pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN3333 (3.3x3.3)
  • Package / Case: 8-VDFN Exposed Pad
pacchetto: 8-VDFN Exposed Pad
Azione6.864
MOSFET (Metal Oxide)
60V
40A (Tc)
10V
4V @ 1mA
19.6nC @ 10V
1264pF @ 30V
±20V
-
65W (Tc)
14 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN3333 (3.3x3.3)
8-VDFN Exposed Pad
IRF620STRR
Vishay Siliconix

MOSFET N-CH 200V 5.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione7.600
MOSFET (Metal Oxide)
200V
5.2A (Tc)
10V
4V @ 250µA
14nC @ 10V
260pF @ 25V
±20V
-
3W (Ta), 50W (Tc)
800 mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IXFN80N50Q2
IXYS

MOSFET N-CH 500V 80A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 80A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione5.328
MOSFET (Metal Oxide)
500V
80A
10V
4.5V @ 8mA
250nC @ 10V
12800pF @ 25V
±30V
-
890W (Tc)
60 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
DMPH6023SK3Q-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.184
MOSFET (Metal Oxide)
60V
35A (Tc)
4.5V, 10V
3V @ 250µA
53.1nC @ 10V
2569pF @ 30V
±20V
-
3.2W
33 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
DMT10H015LK3-13
Diodes Incorporated

MOSFET BVDSS: 61V 100V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.040
MOSFET (Metal Oxide)
100V
50A (Tc)
6V, 10V
3.5V @ 250µA
33.3nC @ 10V
1871pF @ 50V
±20V
-
2.9W (Ta)
15 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AOI442
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 7A TO251A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251A
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione36.864
MOSFET (Metal Oxide)
60V
7A (Ta), 37A (Tc)
4.5V, 10V
2.7V @ 250µA
68nC @ 10V
2300pF @ 30V
±20V
-
2.1W (Ta), 60W (Tc)
20 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPak
hot AO4438
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 8.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione127.104
MOSFET (Metal Oxide)
60V
8.2A (Ta)
4.5V, 10V
3V @ 250µA
58nC @ 10V
2300pF @ 30V
±20V
-
3.1W (Ta)
22 mOhm @ 8.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot AOD450
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 200V 3.8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.8A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione470.568
MOSFET (Metal Oxide)
200V
3.8A (Tc)
10V
6V @ 250µA
3.82nC @ 10V
215pF @ 25V
±30V
-
2.1W (Ta), 25W (Tc)
700 mOhm @ 3.8A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SCH1345-TL-H
ON Semiconductor

MOSFET P-CH 20V 4.5A SOT563

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563/SCH6
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione3.792
MOSFET (Metal Oxide)
20V
4.5A (Ta)
1.5V, 4.5V
1.3V @ 1mA
11nC @ 4.5V
1220pF @ 10V
±10V
-
1W (Ta)
49 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
SOT-563/SCH6
SOT-563, SOT-666
IRL3705NSTRLPBF
Infineon Technologies

MOSFET N-CH 55V 89A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.032
MOSFET (Metal Oxide)
55V
89A (Tc)
4V, 10V
2V @ 250µA
98nC @ 5V
3600pF @ 25V
±16V
-
3.8W (Ta), 170W (Tc)
10 mOhm @ 46A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DN1509K1-G
Microchip Technology

MOSFET N-CH 90V 0.2A SOT23-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 490mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-5
  • Package / Case: SC-74A, SOT-753
pacchetto: SC-74A, SOT-753
Azione7.152
MOSFET (Metal Oxide)
90V
200mA (Tj)
0V
-
-
150pF @ 25V
±20V
Depletion Mode
490mW (Ta)
6 Ohm @ 200mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-5
SC-74A, SOT-753
hot IRFB4410PBF
Infineon Technologies

MOSFET N-CH 100V 96A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione8.712
MOSFET (Metal Oxide)
100V
88A (Tc)
10V
4V @ 150µA
180nC @ 10V
5150pF @ 50V
±20V
-
200W (Tc)
10 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPD90P04P4L04ATMA1
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione49.170
MOSFET (Metal Oxide)
40V
90A (Tc)
4.5V, 10V
2.2V @ 250µA
176nC @ 10V
11570pF @ 25V
±16V
-
125W (Tc)
4.3 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPak (2 Leads + Tab), SC-63
2N7000_D74Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione35.112
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
3V @ 1mA
-
50pF @ 25V
±20V
-
400mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SQJA37EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 30V 30A PPAK SO-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
pacchetto: -
Azione16.401
MOSFET (Metal Oxide)
30 V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
100 nC @ 10 V
4900 pF @ 25 V
±20V
-
45W (Tc)
9.2mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
XP9561GI
YAGEO XSEMI

MOSFET P-CH 40V 36A TO220CFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220CFM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione2.886
MOSFET (Metal Oxide)
40 V
36A (Tc)
4.5V, 10V
3V @ 250µA
40 nC @ 4.5 V
2780 pF @ 25 V
±20V
-
33.7W (Tc)
16mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220CFM
TO-220-3 Full Pack
RJK1535DPE-LE
Renesas Electronics Corporation

40A, 150V, 0.052OHM, N-CHANNEL M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: LDPAK
  • Package / Case: SC-83
pacchetto: -
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MOSFET (Metal Oxide)
150 V
40A
10V
4.5V @ 1mA
35 nC @ 10 V
1420 pF @ 25 V
±30V
-
100W
52mOhm @ 20A, 10V
150°C
Surface Mount
LDPAK
SC-83
DMT10H025LSS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
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MOSFET (Metal Oxide)
100 V
7.1A (Ta)
4.5V, 10V
3V @ 250µA
22.9 nC @ 10 V
1639 pF @ 50 V
±20V
-
1.3W (Ta), 12.9W (Tc)
25mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AOM020V120X2Q
Alpha & Omega Semiconductor Inc.

1200V SILICON CARBIDE MOSFET

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.8V @ 27mA
  • Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 348W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
pacchetto: -
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SiCFET (Silicon Carbide)
1200 V
89A (Tc)
15V
2.8V @ 27mA
166 nC @ 15 V
5180 pF @ 800 V
+15V, -5V
-
348W (Tc)
28mOhm @ 27A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
AO3403L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 2.6A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: 3-SMD, SOT-23-3 Variant
pacchetto: -
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MOSFET (Metal Oxide)
30 V
2.6A (Ta)
2.5V, 10V
1.4V @ 250µA
5.3 nC @ 4.5 V
500 pF @ 15 V
±12V
-
1.4W (Ta)
130mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
TK40S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione2.928
MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.5V @ 200µA
26 nC @ 10 V
1650 pF @ 10 V
±20V
-
88.2W (Tc)
18mOhm @ 20A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTM67N10
IXYS

MOSFET N-CH 100V 67A TO204AE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AE
  • Package / Case: TO-204AE
pacchetto: -
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MOSFET (Metal Oxide)
100 V
67A (Tc)
10V
4V @ 4mA
260 nC @ 10 V
4500 pF @ 25 V
±20V
-
300W (Tc)
25mOhm @ 33.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
TSM180N03CS
Taiwan Semiconductor Corporation

30V, 9A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
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MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
2V @ 250µA
4.1 nC @ 4.5 V
345 pF @ 25 V
±20V
-
2.5W (Tc)
18mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
IXFH98N60X3
IXYS

MOSFET ULTRA JCT 600V 98A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 49A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
600 V
98A (Tc)
10V
5V @ 4mA
90 nC @ 10 V
6250 pF @ 25 V
±20V
-
960W (Tc)
30mOhm @ 49A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
C3M0160120J
Wolfspeed, Inc.

SICFET N-CH 1200V 17A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Azione10.023
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
3.6V @ 2.33mA
24 nC @ 15 V
632 pF @ 1000 V
+15V, -4V
-
90W (Tc)
208mOhm @ 8.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
XP3P010M
YAGEO XSEMI

MOSFET P-CH 30V 13.3A 8SO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
30 V
13.3A (Ta)
4.5V, 10V
3V @ 250µA
54.4 nC @ 4.5 V
6080 pF @ 15 V
±20V
-
2.5W (Ta)
10mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC