Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 145A 2WDSON
|
pacchetto: 3-WDSON |
Azione4.544 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 145A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 72nC @ 10V | 4900pF @ 15V | ±20V | - | 2.8W (Ta), 78W (Tc) | 2.4 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 400V 1.7A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.100 |
|
MOSFET (Metal Oxide) | 400V | 1.7A (Ta) | 10V | 4V @ 250µA | 12nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6 Ohm @ 1A, 10V | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione13.176 |
|
MOSFET (Metal Oxide) | 20V | 13A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 4.5V | - | ±20V | - | 1.7W (Ta) | 5.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
ON Semiconductor |
MOSFET N-CH 30V 10.2A SO-8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione3.312 |
|
MOSFET (Metal Oxide) | 30V | 10.2A (Ta), 71A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 22nC @ 4.5V | 2040pF @ 12V | ±16V | - | 870mW (Ta), 42.4W (Tc) | 5.1 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 4.6A BGA
|
pacchetto: 9-VFBGA |
Azione825.804 |
|
MOSFET (Metal Oxide) | 20V | 4.6A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | 754pF @ 10V | ±12V | - | 1.7W (Ta) | 46 mOhm @ 4.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 9-BGA (1.5x1.6) | 9-VFBGA |
||
Infineon Technologies |
MOSFET N-CH TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.232 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 34µA | 29nC @ 4.5V | 4900pF @ 30V | ±20V | - | 79W (Tc) | 8.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 200V 156A ISOPLUS247
|
pacchetto: TO-247-3 |
Azione2.976 |
|
MOSFET (Metal Oxide) | 200V | 156A (Tc) | 10V | 5V @ 8mA | 378nC @ 10V | 28000pF @ 25V | ±20V | - | 600W (Tc) | 8 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS247? | TO-247-3 |
||
Diodes Incorporated |
MOSFET NCH 40V 12.9A POWERDI
|
pacchetto: 8-PowerTDFN |
Azione6.960 |
|
MOSFET (Metal Oxide) | 40V | 12.9A (Ta), 100A (Tc) | - | 4V @ 250µA | 25.5nC @ 10V | 1405pF @ 20V | - | - | 2.5W (Ta), 150W (Tc) | 10 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 650V 100A PLUS247
|
pacchetto: TO-247-3 |
Azione7.472 |
|
MOSFET (Metal Oxide) | 650V | 100A (Tc) | 10V | 5.5V @ 4mA | 180nC @ 10V | 11300pF @ 25V | ±30V | - | 1040W (Tc) | 30 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 600V 30A TO-247
|
pacchetto: TO-247-3 |
Azione6.420 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 3.5V @ 960µA | 88nC @ 10V | 2267pF @ 25V | ±20V | - | 219W (Tc) | 125 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione3.995.916 |
|
MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 6.4nC @ 4.5V | 285pF @ 10V | 12V | - | 1.25W (Ta) | 54 mOhm @ 3.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
ON Semiconductor |
MOSFET N-CH 30V 8.3A SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione63.312 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 41A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 20.9nC @ 10V | 1401pF @ 15V | ±20V | - | 910mW (Ta), 22.3W (Tc) | 7.2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Transphorm |
GAN FET 650V 20A PQFN88
|
pacchetto: 3-PowerDFN |
Azione10.308 |
|
GaNFET (Gallium Nitride) | 650V | 20A (Tc) | 8V | 2.6V @ 300µA | 14nC @ 8V | 760pF @ 400V | ±18V | - | 96W (Tc) | 130 mOhm @ 13A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (8x8) | 3-PowerDFN |
||
Infineon Technologies |
MOSFET N CH 60V 195A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione14.724 |
|
MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 3.7V @ 250µA | 411nC @ 10V | 13703pF @ 25V | ±20V | - | 375W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 14A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione336.588 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta), 42A (Tc) | 4.5V, 10V | 3V @ 250µA | 28nC @ 10V | 1640pF @ 20V | ±20V | - | 3.1W (Ta), 43W (Tc) | 9 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 240MA SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione920.976 |
|
MOSFET (Metal Oxide) | 60V | 240mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.6nC @ 4.5V | 21pF @ 5V | ±20V | - | 350mW (Ta) | 3 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 4.3A DPAK
|
pacchetto: - |
Azione5.550 |
|
MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 4V @ 250µA | 8.3 nC @ 10 V | 180 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 540mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 18A TO220SIS
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 40W (Tc) | 155mOhm @ 9A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 600V 85A TO264A
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 40V 130A PPAK SO-8
|
pacchetto: - |
Azione12.792 |
|
MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 10V | 3.5V @ 250µA | 36 nC @ 10 V | 1960 pF @ 25 V | ±20V | - | 148W (Tc) | 4.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V U-DFN2020
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 7.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 10.4 nC @ 10 V | 641 pF @ 25 V | ±20V | - | 1.2W (Ta) | 25mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
onsemi |
MOSFET N-CH 30V 21A/49A 8PQFN
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 21A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 1mA | 47 nC @ 10 V | 3000 pF @ 15 V | ±20V | - | 2.5W (Ta), 50W (Tc) | 3.5mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Central Semiconductor Corp |
MOSFET N-CH 50V 280MA SOT23
|
pacchetto: - |
Azione138.216 |
|
MOSFET (Metal Oxide) | 50 V | 280mA (Ta) | 1.8V, 10V | 1V @ 250µA | 0.76 nC @ 4.5 V | 50 pF @ 25 V | 12V | - | 350mW (Ta) | 2Ohm @ 50mA, 5V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V U-DFN2523-
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 10.7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 46 nC @ 10 V | 2380 pF @ 15 V | ±25V | - | 1.04W (Ta) | 12mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2523-6 | 6-PowerUDFN |
||
Vishay Siliconix |
MOSFET N-CH 40V 62.5A/100A PPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 62.5A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 194 nC @ 10 V | 8445 pF @ 20 V | +20V, -16V | - | 6.25W (Ta), 100W (Tc) | 1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V LFPAK
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7
|
pacchetto: - |
Azione7.479 |
|
MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2V @ 200µA | 346 nC @ 10 V | 29000 pF @ 20 V | ±20V | - | 250W (Tc) | 1.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2PAK (6 Leads + Tab) |