Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 24A PQFN
|
pacchetto: 8-VQFN Exposed Pad |
Azione7.408 |
|
MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 10V | 4V @ 100µA | 80nC @ 10V | 3120pF @ 25V | ±20V | - | 3.6W (Ta), 114W (Tc) | 3.5 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
||
Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
|
pacchetto: 8-PowerTDFN |
Azione60.000 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 90µA | 51nC @ 5V | 6540pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 2.7 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.272 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 38nC @ 4.5V | 2710pF @ 15V | ±20V | - | 2.5W (Ta) | 8.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
NXP |
MOSFET N-CH 30V 120A TO220AB
|
pacchetto: TO-220-3 |
Azione6.864 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 4V @ 1mA | 154nC @ 10V | 11960pF @ 25V | ±20V | - | 349W (Tc) | 1.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 17A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.144 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 3V @ 250µA | 70nC @ 4.5V | 6500pF @ 15V | ±20V | - | 1.6W (Ta) | 3 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 2.8A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione4.624 |
|
MOSFET (Metal Oxide) | 250V | 2.8A (Tc) | 10V | 4V @ 250µA | 10.5nC @ 10V | 275pF @ 25V | ±30V | - | 22W (Tc) | 2 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 9.4A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.816 |
|
MOSFET (Metal Oxide) | 60V | 9.4A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | ±30V | - | 2.5W (Ta), 38W (Tc) | 185 mOhm @ 4.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 8A TO-220AB
|
pacchetto: TO-220-3 |
Azione120.600 |
|
MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 620pF @ 25V | ±20V | - | 3.8W (Ta), 88W (Tc) | 435 mOhm @ 4.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 550V 10A TO247-3
|
pacchetto: TO-247-3 |
Azione2.384 |
|
MOSFET (Metal Oxide) | 550V | 10A (Tc) | 10V | 3.5V @ 370µA | 25nC @ 10V | 1020pF @ 100V | ±20V | - | 89W (Tc) | 350 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.696 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 2.2V @ 40µA | 72nC @ 10V | 5300pF @ 25V | ±16V | - | 79W (Tc) | 3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
LOW POWER_NEW
|
pacchetto: - |
Azione6.544 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Sanken |
MOSFET N-CH 40V 29A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.944 |
|
MOSFET (Metal Oxide) | 40V | 29A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14.5nC @ 10V | 990pF @ 25V | ±20V | - | 32W (Tc) | 11.5 mOhm @ 18.8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 29A TO-220AB
|
pacchetto: TO-220-3 |
Azione77.316 |
|
MOSFET (Metal Oxide) | 150V | 4A (Ta), 29A (Tc) | 6V, 10V | 4V @ 250µA | 34nC @ 10V | 1770pF @ 25V | ±20V | - | 135W (Tc) | 54 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 0.36A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione206.370 |
|
MOSFET (Metal Oxide) | 60V | 360mA (Ta) | 10V | 2.4V @ 250µA | 0.8nC @ 4.5V | 50pF @ 10V | ±20V | - | 350mW (Ta) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 1.5A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione577.044 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 7nC @ 10V | 135pF @ 15V | ±20V | - | 420mW (Ta) | 110 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 28A TO-220-3
|
pacchetto: TO-220-3 |
Azione18.360 |
|
MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 2714pF @ 100V | ±30V | - | 250W (Tc) | 123 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 3.7A 1206-8
|
pacchetto: 8-SMD, Flat Lead |
Azione209.112 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.3W (Ta), 2.8W (Tc) | 144 mOhm @ 2.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
Infineon Technologies |
MOSFET N-CH 650V 11.4A TO263-3
|
pacchetto: - |
Azione2.997 |
|
MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104.2W (Tc) | 310mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 12A/54A 8PDFN
|
pacchetto: - |
Azione79.140 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Ta), 54A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 10 V | 1269 pF @ 20 V | ±20V | - | 3.1W (Ta), 68W (Tc) | 11mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PDFN (5.2x5.75) | 8-PowerLDFN |
||
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247-3
|
pacchetto: - |
Azione510 |
|
MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63 nC @ 10 V | 1400 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 200V 0.95A 6-TSOP
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 950mA (Tc) | - | 4V @ 250µA | 18 nC @ 10 V | 500 pF @ 50 V | - | - | - | 1.61Ohm @ 900mA, 10V | - | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Goford Semiconductor |
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
|
pacchetto: - |
Azione13.455 |
|
MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | 950 pF @ 15 V | ±20V | - | 48W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 40V 28A/142A 8WDFN
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 28A (Ta), 142A (Tc) | 4.5V, 10V | 2V @ 90µA | 49 nC @ 10 V | 2940 pF @ 25 V | ±20V | - | 3.2W (Ta), 85W (Tc) | 2.2mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 4V @ 250µA | 59 nC @ 10 V | 1450 pF @ 25 V | ±20V | - | 150W (Tc) | 100mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
P-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
MOSFET N-CH 60V 80A DPAK
|
pacchetto: - |
Azione88.338 |
|
MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 45 nC @ 10 V | 4200 pF @ 25 V | ±20V | - | 85W | 12mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |