Pagina 29 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  29/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot AUIRF3805S-7P
Infineon Technologies

MOSFET N-CH 55V 160A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Azione36.000
MOSFET (Metal Oxide)
55V
160A (Tc)
10V
4V @ 250µA
200nC @ 10V
7820pF @ 25V
±20V
-
300W (Tc)
2.6 mOhm @ 140A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
SPB20N60S5ATMA1
Infineon Technologies

MOSFET N-CH 600V 20A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.016
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5.5V @ 1mA
103nC @ 10V
3000pF @ 25V
±20V
-
208W (Tc)
190 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4831BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 6.6A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.528
MOSFET (Metal Oxide)
30V
6.6A (Tc)
4.5V, 10V
3V @ 250µA
26nC @ 10V
625pF @ 15V
±20V
Schottky Diode (Isolated)
2W (Ta), 3.3W (Tc)
42 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IXTA182N055T
IXYS

MOSFET N-CH 55V 182A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione6.608
MOSFET (Metal Oxide)
55V
182A (Tc)
10V
4V @ 250µA
114nC @ 10V
4850pF @ 25V
±20V
-
360W (Tc)
5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS123LT3G
ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.904
MOSFET (Metal Oxide)
100V
170mA (Ta)
10V
2.8V @ 1mA
-
20pF @ 25V
±20V
-
225mW (Ta)
6 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PHX8NQ11T,127
NXP

MOSFET N-CH 110V 7.5A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione7.936
MOSFET (Metal Oxide)
110V
7.5A (Tc)
10V
4V @ 1mA
14.7nC @ 10V
360pF @ 25V
±20V
-
27.7W (Tc)
180 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
NVMFS5C430NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione5.808
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot AOD424
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 18A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione124.512
MOSFET (Metal Oxide)
20V
18A (Ta), 45A (Tc)
2.5V, 4.5V
1.6V @ 250µA
43nC @ 10V
4630pF @ 10V
±12V
-
2.5W (Ta), 100W (Tc)
4.4 mOhm @ 20A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
IXFB150N65X2
IXYS

MOSFET N-CH 650V 150A PLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1560W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
pacchetto: TO-264-3, TO-264AA
Azione2.384
MOSFET (Metal Oxide)
650V
150A (Tc)
10V
5.5V @ 8mA
430nC @ 10V
20400pF @ 25V
±30V
-
1560W (Tc)
17 mOhm @ 75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS264?
TO-264-3, TO-264AA
hot AON6242
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 18.5A DFN5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6370pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione60.408
MOSFET (Metal Oxide)
60V
18.5A (Ta), 85A (Tc)
4.5V, 10V
2.5V @ 250µA
72nC @ 10V
6370pF @ 30V
±20V
-
2.3W (Ta), 83W (Tc)
3.6 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
hot NTF5P03T3G
ON Semiconductor

MOSFET P-CH 30V 3.7A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione169.644
MOSFET (Metal Oxide)
30V
3.7A (Ta)
4.5V, 10V
3V @ 250µA
38nC @ 10V
950pF @ 25V
±20V
-
1.56W (Ta)
100 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
STY50N105DK5
STMicroelectronics

MOSFET N-CH 1.05KVV 44A MAX247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1050V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: MAX247?
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.576
MOSFET (Metal Oxide)
1050V
44A (Tc)
10V
5V @ 100µA
175nC @ 10V
6600pF @ 100V
±30V
-
625W (Tc)
120 mOhm @ 22A, 10V
-55°C ~ 150°C
Through Hole
MAX247?
TO-247-3
STL110NS3LLH7
STMicroelectronics

MOSFET N-CH 30V 120A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacchetto: 8-PowerSMD, Flat Leads
Azione6.672
MOSFET (Metal Oxide)
30V
120A (Tc)
4.5V, 10V
2.3V @ 1mA
13.7nC @ 4.5V
2110pF @ 25V
±20V
-
4W (Ta), 75W (Tc)
3.4 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
3LN01M-TL-H
ON Semiconductor

MOSFET N-CH 30V 150MA MCP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70 / MCPH3
  • Package / Case: SC-70, SOT-323
pacchetto: SC-70, SOT-323
Azione24.522
MOSFET (Metal Oxide)
30V
150mA (Ta)
1.5V, 4V
-
1.58nC @ 10V
7pF @ 10V
±10V
-
150mW (Ta)
3.7 Ohm @ 80mA, 4V
150°C (TJ)
Surface Mount
SC-70 / MCPH3
SC-70, SOT-323
PMH600UNEH
Nexperia USA Inc.

MOSFET N-CH 20V 800MA DFN0606-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.31 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN0606-3
  • Package / Case: 3-XFDFN
pacchetto: -
Azione24.144
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.2V, 4.5V
950mV @ 250µA
0.31 nC @ 4.5 V
21.3 pF @ 10 V
±8V
-
370mW (Ta), 2.2W (Tc)
620mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
IPDD60R075CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 40A HDSOP-10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 570µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-10-1
  • Package / Case: 10-PowerSOP Module
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
40A (Tc)
-
4.5V @ 570µA
51 nC @ 10 V
2102 pF @ 400 V
±20V
-
266W (Tc)
75mOhm @ 11.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
PSMN1R4-30YLD-1X
Nexperia USA Inc.

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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FDP2D9N12C
onsemi

PTNG 120V N-FET TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 210A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 686µA
  • Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
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MOSFET (Metal Oxide)
120 V
18A (Ta), 210A (Tc)
6V, 10V
4V @ 686µA
109 nC @ 10 V
8894 pF @ 60 V
±20V
-
2.4W (Ta), 333W (Tc)
2.9mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
SIL2305B-TP
Micro Commercial Co

P-CHANNEL MOSFET,SOT23-6L

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2W
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6L
  • Package / Case: SOT-23-6
pacchetto: -
Azione17.910
MOSFET (Metal Oxide)
20 V
5.4A
1.8V, 4.5V
900mV @ 250µA
15 nC @ 4.5 V
740 pF @ 4 V
±10V
-
2W
60mOhm @ 2.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6L
SOT-23-6
TSM60NB099CZ
Taiwan Semiconductor Corporation

600V, 38A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 298W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
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MOSFET (Metal Oxide)
600 V
38A (Tc)
10V
4V @ 250µA
62 nC @ 10 V
2587 pF @ 100 V
±30V
-
298W (Tc)
99mOhm @ 11.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
RS44CA09TQKA
Renesas Electronics Corporation

MOSFET P-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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TK090E65Z-S1X
Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 90MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Azione333
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 1.27mA
47 nC @ 10 V
2780 pF @ 300 V
±30V
-
230W (Tc)
90mOhm @ 15A, 10V
150°C
Through Hole
TO-220
TO-220-3
MCAC90N06Y-TP
Micro Commercial Co

MOSFET N-CH DFN5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4692 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
pacchetto: -
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MOSFET (Metal Oxide)
60 V
90A
6V, 10V
4V @ 250µA
80 nC @ 10 V
4692 pF @ 30 V
±20V
-
35W
3.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
EPC7007BSH
EPC Space, LLC

GAN FET HEMT 200V 18A 4UB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 100 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-SMD
  • Package / Case: 4-SMD, No Lead
pacchetto: -
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MOSFET (Metal Oxide)
200 V
18A (Tc)
5V
2.5V @ 3mA
5.4 nC @ 5 V
525 pF @ 100 V
+6V, -4V
-
-
28mOhm @ 18A, 5V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
SISS67DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 60A PPAK1212-8S

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 65.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacchetto: -
Azione240
MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
111 nC @ 10 V
4380 pF @ 15 V
±25V
-
65.8W (Tc)
5.5mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
DMP21D6UFB4-7B
Diodes Incorporated

MOSFET P-CH 20V 580MA 3DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
pacchetto: -
Azione28.350
MOSFET (Metal Oxide)
20 V
580mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.8 nC @ 8 V
46.1 pF @ 10 V
±8V
-
510mW (Ta)
1Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
SIHF530STRL-GE3
Vishay Siliconix

MOSFET N-CH 100V 14A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione2.100
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
4V @ 250µA
26 nC @ 10 V
670 pF @ 25 V
±20V
-
3.7W (Ta), 88W (Tc)
160mOhm @ 8.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVMFS6H801NT1G
onsemi

MOSFET N-CH 80V 23A/157A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: -
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MOSFET (Metal Oxide)
80 V
23A (Ta), 157A (Tc)
10V
4V @ 250µA
64 nC @ 10 V
4120 pF @ 40 V
±20V
-
3.8W (Ta), 166W (Tc)
2.8mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads