Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 61A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione48.036 |
|
MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 700mV @ 250µA | 58nC @ 4.5V | 2500pF @ 15V | ±10V | - | 89W (Tc) | 13 mOhm @ 37A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione2.880 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 10V | 4V @ 1mA | - | 550pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 65A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione9.120 |
|
MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | ±20V | - | 75W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 12A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.008 |
|
MOSFET (Metal Oxide) | 60V | 12A (Ta), 178A (Tc) | 10V | 3.7V @ 250µA | 102nC @ 10V | 4500pF @ 25V | ±20V | - | 2.1W (Ta), 417W (Tc) | 6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 60V 1.25A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione66.144 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 1V @ 250µA (Min) | 12nC @ 10V | - | ±20V | - | 1.25W (Ta) | 340 mOhm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.424 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 210nC @ 20V | 3200pF @ 25V | ±20V | - | 285W (Tc) | 8 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 14.4A TO-220
|
pacchetto: TO-220-3 |
Azione103.464 |
|
MOSFET (Metal Oxide) | 150V | 14.4A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 715pF @ 25V | ±25V | - | 104W (Tc) | 210 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 250V 2.7A TO-220AB
|
pacchetto: TO-220-3 |
Azione5.024 |
|
MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 36W (Tc) | 2 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 41V 60V TSOT26
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione3.216 |
|
MOSFET (Metal Oxide) | 60V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | ±20V | - | 1.8W (Ta) | 105 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
STMicroelectronics |
MOSFET N-CH 800V 3A POWERFLAT
|
pacchetto: 8-PowerVDFN |
Azione2.080 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 5V @ 100µA | 5nC @ 10V | 177pF @ 100V | ±30V | - | 38W (Tc) | 1.75 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 200V 25A TO-220AB
|
pacchetto: TO-220-3 |
Azione37.392 |
|
MOSFET (Metal Oxide) | 200V | 25A (Tc) | 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | ±20V | - | 144W (Tc) | 72.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 58A TO-220
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione6.540 |
|
MOSFET (Metal Oxide) | 60V | 58A (Tc) | 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | ±20V | - | 35W (Tc) | 5.4 mOhm @ 29A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N CH 600V 15A TO-220
|
pacchetto: TO-220-3 |
Azione6.336 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 3.5V @ 250µA | 62nC @ 10V | 2500pF @ 25V | ±20V | - | 156W (Tc) | 260 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 18A 8-PQFN
|
pacchetto: 8-PowerTDFN |
Azione4.464 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 250µA | 23nC @ 10V | 1385pF @ 15V | ±20V | - | 3.3W (Ta), 60W (Tc) | 6 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool?56 | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 9.7A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione12.848.472 |
|
MOSFET (Metal Oxide) | 30V | 9.7A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 32nC @ 10V | 1900pF @ 15V | ±20V | - | 3.1W (Ta) | 20 mOhm @ 9.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 150V 14A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione33.672 |
|
MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 5.5V @ 250µA | 29nC @ 10V | 620pF @ 25V | ±30V | - | 86W (Tc) | 180 mOhm @ 8.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 10A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione508.872 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 3V @ 250µA | 18nC @ 4.5V | - | ±20V | - | 1.47W (Ta) | 8.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Panasonic Electronic Components |
MOSFET N-CH 30V 100MA SSSMINI3
|
pacchetto: SOT-723 |
Azione97.680 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 1µA | - | 12pF @ 3V | ±12V | - | 100mW (Ta) | 3 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | SSSMini3-F2-B | SOT-723 |
||
MOSLEADER |
P -30V -3A SOT-23N
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
SMALL SIGNAL P-CHANNEL MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
DISCRETE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 18V, 20V | 5V @ 1mA | 73 nC @ 20 V | 1370 pF @ 400 V | +18V, -5V | - | 240W (Tc) | 67mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET P-CH 30V 11A 3X3 PQFN
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta), 24A (Tc) | - | 2.4V @ 25µA | 48 nC @ 10 V | 1543 pF @ 25 V | - | - | - | 10mOhm @ 11A, 20V | - | Surface Mount | PQFN (3x3) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 40V 37.5A/60A PPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 37.5A (Ta), 60A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 89 nC @ 10 V | 4270 pF @ 20 V | +20V, -16V | - | 5W (Ta), 65.7W (Tc) | 1.98mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
||
Renesas Electronics Corporation |
MOSFET P-CH 30V 100MA SC70
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | - | 1.7V @ 10µA | - | 5000 pF @ 3 V | - | - | - | 13Ohm @ 10mA, 10V | - | Surface Mount | SC-70 | SC-70, SOT-323 |
||
IXYS |
DISCRETE MOSFET 26A 650V X3 TO26
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 26A (Tc) | 10V | 5.2V @ 2.5mA | 20 nC @ 10 V | 1500 pF @ 25 V | ±20V | - | 357W (Tc) | 155mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
PROTOTYPE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 1.8V, 8V | 1.1V @ 250µA | 1.35 nC @ 4.5 V | 195 pF @ 15 V | 12V | - | 500mW (Ta) | 109mOhm @ 500mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
YAGEO XSEMI |
MOSFET N-CH 60V 66A TO252
|
pacchetto: - |
Azione3.000 |
|
MOSFET (Metal Oxide) | 60 V | 66A (Tc) | 6V, 10V | 4V @ 250µA | 56 nC @ 10 V | 2976 pF @ 50 V | ±20V | - | 2W (Ta), 50W (Tc) | 6.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Goford Semiconductor |
MOSFET N-CH 190V 3A SOT-23-3L
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 3A (Tc) | 4.5V, 10V | 3V @ 250µA | - | - | ±20V | - | 1.8W (Tc) | 540mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |