Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.828 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 6790pF @ 25V | ±20V | - | 300W (Tc) | 4.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.760 |
|
MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | ±20V | - | 92W (Tc) | 12 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH SSOT6
|
pacchetto: - |
Azione3.232 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione6.688 |
|
MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | ±20V | - | 700mW (Ta) | 59 mOhm @ 3.1A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 100V 8A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.280 |
|
MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | ±30V | - | 3.75W (Ta), 65W (Tc) | 530 mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET P-CH 20V 2.4A 8MICRO
|
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Azione11.280 |
|
MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | 750pF @ 16V | ±10V | Schottky Diode (Isolated) | 780mW (Ta) | 90 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8
|
pacchetto: 8-PowerTDFN |
Azione3.344 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 6V, 10V | 3.1V @ 73µA | 45nC @ 10V | 3360pF @ 15V | ±25V | - | 2.1W (Ta), 52W (Tc) | 12 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 100V 16.9A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.408 |
|
MOSFET (Metal Oxide) | 100V | 16.9A (Tc) | 4.5V, 10V | 3V @ 250µA | 30nC @ 10V | 860pF @ 50V | ±20V | - | 2.1W (Ta), 41.7W (Tc) | 66 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 250V 260MA 4SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione19.356 |
|
MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 2.8V, 10V | 2V @ 130µA | 5.4nC @ 10V | 104pF @ 25V | ±20V | - | 1.8W (Ta) | 12 Ohm @ 260mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 30V 35A 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione61.956 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 71nC @ 10V | 3345pF @ 15V | ±20V | - | 3.8W (Ta), 52.1W (Tc) | 11.4 mOhm @ 14.4A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Panasonic Electronic Components |
MOSFET N-CH 20V 2.2A WSSMINI6
|
pacchetto: 6-SMD, Flat Leads |
Azione120.000 |
|
MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.8V, 4V | 1.3V @ 1mA | - | 280pF @ 10V | ±10V | - | 540mW (Ta) | 105 mOhm @ 1A, 4V | 150°C (TJ) | Surface Mount | WSSMini6-F1 | 6-SMD, Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 100V 50A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione485.580 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 4V @ 250µA | 62nC @ 10V | 2180pF @ 25V | ±20V | - | 125W (Tc) | 28 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 5.5A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione22.008 |
|
MOSFET (Metal Oxide) | 500V | 5.5A (Tc) | 10V | 5V @ 250µA | 19.8nC @ 10V | 960pF @ 25V | ±30V | - | 89W (Tc) | 1.15 Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 150V 310A SOT227
|
pacchetto: SOT-227-4, miniBLOC |
Azione19.572 |
|
MOSFET (Metal Oxide) | 150V | 310A | 10V | 5V @ 8mA | 715nC @ 10V | 47500pF @ 25V | ±20V | - | 1070W (Tc) | 4 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO220
|
pacchetto: TO-220-3 |
Azione19.974 |
|
MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | ±20V | - | 255W (Tc) | 3.4 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
NEC Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
NFET T0220FP JPN
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
600V, 11A, SINGLE N-CHANNEL POWE
|
pacchetto: - |
Azione11.865 |
|
MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 5V @ 1mA | 21.3 nC @ 10 V | 832 pF @ 25 V | ±20V | - | 78W (Tc) | 390mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 5A TO252
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 5A (Tc) | 10V | 4.1V @ 250µA | 10 nC @ 10 V | 461 pF @ 100 V | ±20V | - | 56.5W (Tc) | 950mOhm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
pacchetto: - |
Azione1.482 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
UMW |
20V 6A 25MR@4.5V,6A 1V@50A N CHA
|
pacchetto: - |
Azione7.803 |
|
MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 2.5V, 4.5V | 1V @ 50µA | 10 nC @ 4.5 V | 574 pF @ 10 V | ±12V | - | - | 25mOhm @ 6A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
FET -100V 22.0 MOHM PQFN56
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 7.9A (Ta), 50A (Tc) | 6V, 10V | 4V @ 250µA | 59 nC @ 10 V | 4085 pF @ 50 V | ±25V | - | 2.5W (Ta), 104W (Tc) | 22mOhm @ 7.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3
|
pacchetto: - |
Azione25.047 |
|
MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 3.2 nC @ 5 V | 230 pF @ 10 V | ±20V | - | 700mW (Ta) | 160mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Comchip Technology |
MOSFET P-CH 30V 9.6A/45A DFN5X6
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 9.6A (Ta), 45A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 4.5 V | 2215 pF @ 15 V | ±20V | - | 2W (Ta), 45W (Tc) | 15mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5x6 (PR-PAK) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Littelfuse Inc. |
MOSFET SIC 1200V 14A TO247-4L
|
pacchetto: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 4V @ 5mA | 50 nC @ 20 V | 890 pF @ 800 V | +22V, -6V | - | 125W (Tc) | 200mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 8.5A TO220F
|
pacchetto: - |
Azione2.250 |
|
MOSFET (Metal Oxide) | 700 V | 8.5A (Tj) | 10V | 3.5V @ 250µA | 15.5 nC @ 10 V | 870 pF @ 100 V | ±20V | - | 27W (Tc) | 600mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |