Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 56A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.848 |
|
MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 2.25V @ 25µA | 14nC @ 4.5V | 1150pF @ 15V | ±20V | - | 50W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 67A TO-220AB
|
pacchetto: TO-220-3 |
Azione10.044 |
|
MOSFET (Metal Oxide) | 20V | 67A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 13nC @ 4.5V | 1220pF @ 10V | ±20V | - | 57W (Tc) | 7.9 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 8DFN
|
pacchetto: - |
Azione2.240 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
ON Semiconductor |
MOSFET N-CH
|
pacchetto: - |
Azione5.600 |
|
- | - | - | 4V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
||
NXP |
MOSFET N-CH 20V 1A TO-236AB
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione138.732 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 1.65nC @ 4.5V | 83pF @ 10V | ±8V | - | 325mW (Ta), 1.14W (Tc) | 165 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione576.660 |
|
MOSFET (Metal Oxide) | 30V | 80A (Ta) | 4.5V, 10V | 3V @ 250µA | 33nC @ 5V | 2440pF @ 15V | ±20V | - | 68W (Tc) | 7 mOhm @ 40A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.648 |
|
MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 350pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 4.4 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 8.9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione1.826.364 |
|
MOSFET (Metal Oxide) | 30V | 8.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 38nC @ 10V | 1580pF @ 15V | ±20V | - | 1.4W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.232 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 45nC @ 4.5V | 750pF @ 25V | ±20V | - | 40W (Tc) | 9 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 10.6A TO220
|
pacchetto: TO-220-3 |
Azione70.920 |
|
MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 3.5V @ 320µA | 32nC @ 10V | 700pF @ 100V | ±20V | - | 83W (Tc) | 380 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH 1000V 32A PLUS247
|
pacchetto: TO-247-3 |
Azione4.896 |
|
MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 6.5V @ 1mA | 225nC @ 10V | 14200pF @ 25V | ±30V | - | 960W (Tc) | 320 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 73A
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.688 |
|
MOSFET (Metal Oxide) | 80V | 73A (Tc) | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | ±20V | - | 100W (Tc) | 9.6 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 650V 15A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.920 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 5V @ 250µA | 31nC @ 10V | 1240pF @ 100V | ±25V | - | 110W (Tc) | 220 mOhm @ 7.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3
|
pacchetto: SC-96 |
Azione710.820 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 4.1nC @ 5V | 165pF @ 10V | 20V | - | 1W (Ta) | 70 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
ON Semiconductor |
MOSFET P-CH 20V 1.3A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione7.872 |
|
MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.5V, 4.5V | 1.25V @ 250µA | 5.5nC @ 4V | 225pF @ 5V | ±12V | - | 400mW (Ta) | 220 mOhm @ 750mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 17.5A TO220
|
pacchetto: TO-220-3 |
Azione17.514 |
|
MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 4.5V @ 730µA | 68nC @ 10V | 1850pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 70V 3.7A SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione15.600 |
|
MOSFET (Metal Oxide) | 70V | 2.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 18nC @ 10V | 635pF @ 40V | ±20V | - | 2W (Ta) | 160 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Goford Semiconductor |
MOSFET P-CH 40V 54A TO-220F
|
pacchetto: - |
Azione330 |
|
MOSFET (Metal Oxide) | 40 V | 54A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 106 nC @ 10 V | 6768 pF @ 20 V | ±20V | - | 35.7W (Tc) | 7mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Taiwan Semiconductor Corporation |
600V, 10A, SINGLE N-CHANNEL POW
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 3.8V @ 250µA | 38 nC @ 10 V | 1928 pF @ 50 V | ±30V | - | 56.8W (Tc) | 600mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
onsemi |
POWER MOSFET, N-CHANNEL POWERTRE
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
pacchetto: - |
Azione204 |
|
MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 700µA | 71 nC @ 10 V | 5000 pF @ 30 V | ±20V | - | 168W (Tc) | 3.2mOhm @ 50A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 800V 8A TO247AC
|
pacchetto: - |
Azione1.500 |
|
MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 4V @ 250µA | 42 nC @ 10 V | 804 pF @ 100 V | ±30V | - | 78W (Tc) | 450mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Panjit International Inc. |
100V N-CHANNEL MOSFET
|
pacchetto: - |
Azione34.698 |
|
MOSFET (Metal Oxide) | 100 V | 2.4A (Ta), 9A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19 nC @ 10 V | 1021 pF @ 25 V | ±20V | - | 2W (Ta), 31W (Tc) | 152mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 100V PWRDI5060
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 7.3A (Ta), 44A (Tc) | 4.5V, 10V | 3V @ 250µA | 33.3 nC @ 10 V | 1871 pF @ 50 V | ±20V | - | 1.3W (Ta), 46W (Tc) | 16mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 300MA UMT3
|
pacchetto: - |
Azione8.040 |
|
MOSFET (Metal Oxide) | 30 V | 300mA (Ta) | 4V, 10V | 2.5V @ 1mA | - | 20 pF @ 10 V | ±20V | - | 200mW | 1.2Ohm @ 300mA, 10V | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 21A (Tj) | 10V | 4V @ 250µA | 123 nC @ 10 V | 3400 pF @ 25 V | ±30V | - | 50W (Tc) | 140mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
International Rectifier |
HEXFET POWER MOSFETS
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 4A | - | - | - | - | - | - | 75W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Taiwan Semiconductor Corporation |
20V, 28A, SINGLE N-CHANNEL POWER
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 28A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 12.3 nC @ 4.5 V | 961 pF @ 15 V | ±8V | - | 2W (Ta) | 20mOhm @ 20A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |