Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione395.220 |
|
MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | - | 79W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Global Power Technologies Group |
MOSFET N-CH 650V 9.5A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione5.440 |
|
MOSFET (Metal Oxide) | 650V | 9.5A (Tc) | 10V | 5V @ 250µA | 36nC @ 10V | 1670pF @ 25V | ±30V | - | 52W (Tc) | 820 mOhm @ 4.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 250V 110A PLUS220SMD
|
pacchetto: PLUS-220SMD |
Azione2.896 |
|
MOSFET (Metal Oxide) | 250V | 110A (Tc) | 10V | 4.5V @ 1mA | 157nC @ 10V | 9400pF @ 25V | ±20V | - | 694W (Tc) | 24 mOhm @ 55A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione40.728 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 3V @ 1mA | - | 60pF @ 25V | ±20V | - | 350mW (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 120V 15A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.560 |
|
MOSFET (Metal Oxide) | 120V | 15A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | ±30V | - | 3.75W (Ta), 100W (Tc) | 200 mOhm @ 7.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 600V 10A TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione14.064 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 30.5nC @ 10V | 960pF @ 50V | ±25V | - | 25W (Tc) | 410 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 500V 29A TO-247
|
pacchetto: TO-247-3 |
Azione3.840 |
|
MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 4.5V @ 150µA | 200nC @ 10V | 6450pF @ 25V | ±30V | - | 350W (Tc) | 130 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MV POWER MOS
|
pacchetto: - |
Azione7.424 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N CH 100V 15A 8DFN
|
pacchetto: 8-PowerWDFN |
Azione2.000 |
|
MOSFET (Metal Oxide) | 100V | 15A (Ta), 50A (Tc) | 6V, 10V | 3.4V @ 250µA | 38nC @ 10V | 2075pF @ 50V | ±20V | - | 6.25W (Ta), 83W (Tc) | 12.6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 69A U8FL
|
pacchetto: 8-PowerWDFN |
Azione3.072 |
|
MOSFET (Metal Oxide) | 30V | 18.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 10V | 1740pF @ 12V | ±20V | - | 3.2W (Ta), 21W (Tc) | 4.7 mOhm @ 23A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
|
pacchetto: 8-PowerVDFN |
Azione4.736 |
|
MOSFET (Metal Oxide) | 12V | 70A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 47nC @ 8V | 2385pF @ 6V | ±8V | - | 1.9W (Ta) | 3.8 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 25V 30V U-DFN2020-
|
pacchetto: 6-UDFN Exposed Pad |
Azione4.736 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 2V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | ±20V | - | 2.02W (Ta) | 12 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Infineon Technologies |
MOSFET N-CH 560V 7.6A TO220FP
|
pacchetto: TO-220-3 Full Pack |
Azione805.524 |
|
MOSFET (Metal Oxide) | 560V | 7.6A (Tc) | 10V | 3.9V @ 350µA | 32nC @ 10V | 750pF @ 25V | ±20V | - | 32W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.944 |
|
MOSFET (Metal Oxide) | 20V | 8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 11.2nC @ 4.5V | 500pF @ 10V | ±8V | - | 2.5W (Ta) | 30 mOhm @ 4.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 80V 45A
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.584 |
|
MOSFET (Metal Oxide) | 80V | 45A (Tc) | 6V, 10V | 3.5V @ 33µA | 25nC @ 10V | 1730pF @ 40V | ±20V | - | 79W (Tc) | 13.5 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 100A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione14.034 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V | 2.1V @ 1mA | 35nC @ 5V | 5026pF @ 25V | ±10V | - | 167W (Tc) | 5.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Micro Commercial Co |
MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34.5 nC @ 10 V | 1666 pF @ 30 V | ±20V | - | 60W (Tj) | 6mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
||
Harris Corporation |
30A, 60V, LOGIC LEVEL N CHANNEL
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
|
pacchetto: - |
Azione6.375 |
|
MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 2.5V @ 250µA | 106 nC @ 10 V | 5380 pF @ 20 V | ±20V | - | 130W (Tc) | 10mOhm @ 10A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
SICFET N-CH 1200V 40A H2PAK-2
|
pacchetto: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 3.5V @ 1mA | 105 nC @ 20 V | 1700 pF @ 400 V | +25V, -10V | - | 270W (Tc) | 100mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Surface Mount | H2PAK-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET P-CH 70V 2.6A SOT223 T&R
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 70 V | 2.6A (Ta) | 4.5V, 10V | 1V @ 250µA | 18 nC @ 10 V | 635 pF @ 40 V | ±20V | - | 2W (Ta) | 160mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-3 | TO-261-4, TO-261AA |
||
STMicroelectronics |
MOSFET N-CH 60V 23A DPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 10V | 4V @ 250µA | 31 nC @ 10 V | 690 pF @ 25 V | ±20V | - | 60W (Tc) | 40mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET P-CH 30V 41A LFPAK56
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 41A (Ta) | 4.5V, 10V | 3V @ 250µA | 28 nC @ 10 V | 1408 pF @ 15 V | ±20V | - | 66W (Ta) | 20mOhm @ 8.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
onsemi |
PTNG 100V LL, SINGLE NCH, LFPAK3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 7A (Ta), 29A (Tc) | 4.5V, 10V | 3V @ 45µA | 11.8 nC @ 10 V | 856 pF @ 50 V | ±20V | - | 3.2W (Ta), 51W (Tc) | 27mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
IXYS |
MOSFET ULTRA JCT 600V 36A TO220
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 5V @ 2.5mA | 29 nC @ 10 V | 2030 pF @ 25 V | ±20V | - | 446W (Tc) | 90mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
MOSLEADER |
P -30V -4A SOT23-3
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 4.7A (Ta) | 10V | 4V @ 250µA | 12 nC @ 10 V | 240 pF @ 25 V | ±20V | - | 2.5W (Ta), 20W (Tc) | 400mOhm @ 2.35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |