Pagina 1462 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.462/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRL530NL
Infineon Technologies

MOSFET N-CH 100V 17A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione2.032
MOSFET (Metal Oxide)
100V
17A (Tc)
4V, 10V
2V @ 250µA
34nC @ 5V
800pF @ 25V
±20V
-
3.8W (Ta), 79W (Tc)
100 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IXFJ40N30Q
IXYS

MOSFET N-CH TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-268
  • Package / Case: TO-220-3, Short Tab
pacchetto: TO-220-3, Short Tab
Azione3.328
MOSFET (Metal Oxide)
300V
40A (Tc)
10V
4V @ 4mA
200nC @ 10V
4800pF @ 25V
±20V
-
300W (Tc)
80 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-268
TO-220-3, Short Tab
GP1M016A060F
Global Power Technologies Group

MOSFET N-CH 600V 16A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.888
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
4V @ 250µA
53nC @ 10V
3039pF @ 25V
±30V
-
48W (Tc)
470 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FQB70N08TM
Fairchild/ON Semiconductor

MOSFET N-CH 80V 70A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.600
MOSFET (Metal Oxide)
80V
70A (Tc)
10V
4V @ 250µA
98nC @ 10V
2700pF @ 25V
±25V
-
3.75W (Ta), 155W (Tc)
17 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot 2SK354700L
Panasonic Electronic Components

MOSFET N-CH 50V .1A SSS-MINI-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Vgs (Max): ±7V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSSMini3-F1
  • Package / Case: SOT-723
pacchetto: SOT-723
Azione265.800
MOSFET (Metal Oxide)
50V
100mA (Ta)
2.5V, 4V
1.5V @ 1µA
-
12pF @ 3V
±7V
-
100mW (Ta)
12 Ohm @ 10mA, 4V
125°C (TJ)
Surface Mount
SSSMini3-F1
SOT-723
hot IRFD220
Vishay Siliconix

MOSFET N-CH 200V 800MA 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 480mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
pacchetto: 4-DIP (0.300", 7.62mm)
Azione1.214.796
MOSFET (Metal Oxide)
200V
800mA (Ta)
10V
4V @ 250µA
14nC @ 10V
260pF @ 25V
±20V
-
1W (Ta)
800 mOhm @ 480mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
hot IPW60R199CP
Infineon Technologies

MOSFET N-CH 600V 16A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 660µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione62.388
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
3.5V @ 660µA
43nC @ 10V
1520pF @ 100V
±20V
-
139W (Tc)
199 mOhm @ 9.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
hot IRFR2407PBF
Infineon Technologies

MOSFET N-CH 75V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione431.640
MOSFET (Metal Oxide)
75V
42A (Tc)
10V
4V @ 250µA
110nC @ 10V
2400pF @ 25V
±20V
-
110W (Tc)
26 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXTH160N15T
IXYS

MOSFET N-CH 150V 160A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione390.000
MOSFET (Metal Oxide)
150V
160A (Tc)
10V
5V @ 1mA
160nC @ 10V
8800pF @ 25V
±30V
-
830W (Tc)
9.6 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot SI7840BDP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione12.396
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
3V @ 250µA
21nC @ 4.5V
-
±20V
-
1.8W (Ta)
8.5 mOhm @ 16.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot TP5322N8-G
Microchip Technology

MOSFET P-CH 220V 0.26A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 220V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
pacchetto: TO-243AA
Azione131.784
MOSFET (Metal Oxide)
220V
260mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
110pF @ 25V
±20V
-
1.6W (Ta)
12 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
NTMFS4937NT3G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2516pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione7.840
MOSFET (Metal Oxide)
30V
10.2A (Ta), 70A (Tc)
4.5V, 10V
2.2V @ 250µA
31nC @ 10V
2516pF @ 15V
±20V
-
920mW (Ta), 43W (Tc)
4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PMPB23XNE,115
Nexperia USA Inc.

MOSFET N-CH 20V 7A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DFN2020MD (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: 6-UDFN Exposed Pad
Azione7.872
MOSFET (Metal Oxide)
20V
7A (Ta)
1.8V, 4.5V
900mV @ 250µA
17nC @ 4.5V
1136pF @ 10V
±12V
-
1.7W (Ta), 12.5W (Tc)
22 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DFN2020MD (2x2)
6-UDFN Exposed Pad
DMN61D9U-13
Diodes Incorporated

MOSFET N-CH 60V 0.38A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.264
MOSFET (Metal Oxide)
60V
380mA (Ta)
1.8V, 5V
1V @ 250µA
0.4nC @ 4.5V
28.5pF @ 30V
±20V
-
370mW (Ta)
2 Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot IXTQ160N10T
IXYS

MOSFET N-CH 100V 160A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
pacchetto: TO-3P-3, SC-65-3
Azione7.296
MOSFET (Metal Oxide)
100V
160A (Tc)
10V
4.5V @ 250µA
132nC @ 10V
6600pF @ 25V
±30V
-
430W (Tc)
7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
PSMN0R9-30YLDX
Nexperia USA Inc.

MOSFET N-CH 30V 100A 56LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7668pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.87 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK
pacchetto: SOT-1023, 4-LFPAK
Azione2.656
MOSFET (Metal Oxide)
30V
100A (Tc)
4.5V, 10V
2.2V @ 1mA
109nC @ 10V
7668pF @ 15V
±20V
-
349W (Tc)
0.87 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SOT-1023, 4-LFPAK
hot STF10NM50N
STMicroelectronics

MOSFET N-CH 500V 7.0A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione397.380
MOSFET (Metal Oxide)
500V
7A (Tc)
10V
4V @ 250µA
17nC @ 10V
450pF @ 50V
±25V
-
25W (Tc)
630 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STP11N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 614pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione19.020
MOSFET (Metal Oxide)
600V
10A (Tc)
10V
5V @ 250µA
16.5nC @ 10V
614pF @ 100V
±25V
-
110W (Tc)
420 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TN0702N3-G
Microchip Technology

MOSFET N-CH 20V 530MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione15.666
MOSFET (Metal Oxide)
20V
530mA (Tj)
2V, 5V
1V @ 1mA
-
200pF @ 20V
±20V
-
1W (Tc)
1.3 Ohm @ 500mA, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot SIRA10DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione307.728
MOSFET (Metal Oxide)
30V
60A (Tc)
4.5V, 10V
2.2V @ 250µA
51nC @ 10V
2425pF @ 15V
+20V, -16V
-
5W (Ta), 40W (Tc)
3.7 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot SI2333DDS-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 6A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1275pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.387.716
MOSFET (Metal Oxide)
12V
6A (Tc)
1.5V, 4.5V
1V @ 250µA
35nC @ 8V
1275pF @ 6V
±8V
-
1.2W (Ta), 1.7W (Tc)
28 mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
AOUS66920
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UltraSO-8™
  • Package / Case: 3-PowerSMD, Flat Leads
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
19.5A (Ta), 69A (Tc)
4.5V, 10V
2.5V @ 250µA
50 nC @ 10 V
2500 pF @ 50 V
±20V
-
6.2W (Ta), 86W (Tc)
8.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
UltraSO-8™
3-PowerSMD, Flat Leads
STL33N60M6
STMicroelectronics

MOSFET 600V 21A POWERFLAT HV

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (8x8) HV
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
4.75V @ 250µA
33.4 nC @ 10 V
1515 pF @ 100 V
±25V
-
150W (Tc)
137mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
IRF8707TRPBF-1
Infineon Technologies

MOSFET N-CH 30V 11A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
11A (Ta)
4.5V, 10V
2.35V @ 25µA
9.3 nC @ 4.5 V
760 pF @ 15 V
±20V
-
2.5W (Ta)
11.9mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
R6030JNZC8
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
pacchetto: -
Azione87
MOSFET (Metal Oxide)
600 V
30A (Tc)
15V
7V @ 5.5mA
74 nC @ 15 V
2500 pF @ 100 V
±30V
-
93W (Tc)
143mOhm @ 15A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
E3M0280090D
Wolfspeed, Inc.

SICFET N-CH 900V 11.5A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: -
Azione1.524
SiCFET (Silicon Carbide)
900 V
11.5A (Tc)
15V
3.5V @ 1.2mA
9.5 nC @ 15 V
150 pF @ 600 V
+18V, -8V
-
54W (Tc)
360mOhm @ 7.5A, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
PJS6403_S1_00001
Panjit International Inc.

30V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
pacchetto: -
Azione1.110
MOSFET (Metal Oxide)
30 V
6.4A (Ta)
4.5V, 10V
2.5V @ 250µA
7.8 nC @ 4.5 V
870 pF @ 15 V
±20V
-
2W (Ta)
32mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MTSF3N03HDR2
onsemi

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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