Transistor - FET, MOSFET - Singoli

IRF3711Z

Infineon Technologies

MOSFET N-CH 20V 92A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

BFL4037-1E

ON Semiconductor

MOSFET N-CH 500V 11A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F-3FS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

VP0808B-E3

Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.25W (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-39
• Package / Case: TO-205AD, TO-39-3 Metal Can

pacchetto: TO-205AD, TO-39-3 Metal Can

2SJ665-DL-E

ON Semiconductor

MOSFET P-CH 100V 27A SMP-FD

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
• Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMP-FD
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TK4A65DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 3.5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 1.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

PSMN9R0-25YLC,115

NXP

MOSFET N-CH 25V 46A LL LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.95V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

pacchetto: SC-100, SOT-669

HUF75842S3S

Fairchild/ON Semiconductor

MOSFET N-CH 150V 43A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 175nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQP9N08L

Fairchild/ON Semiconductor

MOSFET N-CH 80V 9.3A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

pacchetto: TO-220-3

FDD107AN06LA0

Fairchild/ON Semiconductor

MOSFET N-CH 60V 10.9A D-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 91 mOhm @ 10.9A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFI610G

Vishay Siliconix

MOSFET N-CH 200V 2.6A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacchetto: TO-220-3 Full Pack, Isolated Tab

IPP65R660CFDAAKSA1

Infineon Technologies

MOSFET N-CH 650V TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 660 mOhm @ 3.2A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

pacchetto: TO-220-3

AOTF12T50P

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 12A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1477pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 43W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

pacchetto: TO-220-3 Full Pack

DMP3026SFDE-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type E)
• Package / Case: 6-UDFN Exposed Pad

pacchetto: 6-UDFN Exposed Pad

FDP8N50NZ

Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220AB-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

pacchetto: TO-220-3

FDMC6686P

Fairchild/ON Semiconductor

MOSFET P-CH 20V POWER33

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 122nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 18A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (3.3x3.3), Power33
• Package / Case: 8-PowerWDFN

pacchetto: 8-PowerWDFN

TPN2R203NC,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A 8-TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 22.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

pacchetto: 8-PowerVDFN

SSM3K7002CFU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.17A SMD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: USM
• Package / Case: SC-70, SOT-323

pacchetto: SC-70, SOT-323

SPP17N80C3

Infineon Technologies

MOSFET N-CH 800V 17A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

pacchetto: TO-220-3

IPD122N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 59A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 46µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 46A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63

CSD17302Q5A

Texas Instruments

MOSFET N-CH 30V 87A 8SON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 87A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 14A, 8V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSON (5x6)
• Package / Case: 8-PowerTDFN

pacchetto: 8-PowerTDFN

DMN3066LVT-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 900mW
• Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: -

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ICE20N60

IceMOS Technology

Superjunction MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 236W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

pacchetto: -

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MSC025SMA120B

Microchip Technology

SICFET N-CH 1.2KV 103A TO247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacchetto: -

NTH4LN019N65S3H

onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 14.3mA
• Gate Charge (Qg) (Max) @ Vgs: 282 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15993 pF @ 400 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 625W (Tc)
• Rds On (Max) @ Id, Vgs: 19.3mOhm @ 37.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

pacchetto: -

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DMN2400UFB4-7R

Diodes Incorporated

MOSFET N-CH X2-DFN1006-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 470mW (Ta)
• Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1006-3
• Package / Case: 3-XFDFN

pacchetto: -

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18N20F

Goford Semiconductor

MOSFET N-CH 200V 18A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

pacchetto: -

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PMH850UPEH

Nexperia USA Inc.

MOSFET P-CH 30V 600MA DFN0606-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 62.2 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 660mW (Ta), 2.23W (Tc)
• Rds On (Max) @ Id, Vgs: 1Ohm @ 500mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN0606-3
• Package / Case: 3-XFDFN

pacchetto: -

DMP2036UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSOT-26
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacchetto: -

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