Pagina 1435 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.435/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPB77N06S212ATMA1
Infineon Technologies

MOSFET N-CH 55V 77A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.328
MOSFET (Metal Oxide)
55V
77A (Tc)
10V
4V @ 93µA
60nC @ 10V
1770pF @ 25V
±20V
-
158W (Tc)
11.7 mOhm @ 38A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS2510SDC
Fairchild/ON Semiconductor

MOSFET N-CH 25V 28A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Dual Cool?56
  • Package / Case: 8-PowerTDFN
pacchetto: 8-PowerTDFN
Azione4.176
MOSFET (Metal Oxide)
25V
28A (Ta), 49A (Tc)
4.5V, 10V
3V @ 1mA
45nC @ 10V
2780pF @ 13V
±20V
-
3.3W (Ta), 60W (Tc)
2.9 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool?56
8-PowerTDFN
hot IRFU120ATU
Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione68.424
MOSFET (Metal Oxide)
100V
8.4A (Tc)
10V
4V @ 250µA
22nC @ 10V
480pF @ 25V
-
-
2.5W (Ta), 32W (Tc)
200 mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot DMS2220LFW-7
Diodes Incorporated

MOSFET P-CH 20V 2.9A 8-DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN3020 (3x2)
  • Package / Case: 8-VDFN Exposed Pad
pacchetto: 8-VDFN Exposed Pad
Azione72.000
MOSFET (Metal Oxide)
20V
2.9A (Ta)
1.8V, 4.5V
1.3V @ 250µA
-
632pF @ 10V
±12V
Schottky Diode (Isolated)
1.5W (Ta)
95 mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN3020 (3x2)
8-VDFN Exposed Pad
hot SI1046R-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 0.606A SC75-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
pacchetto: SC-75A
Azione36.000
MOSFET (Metal Oxide)
20V
-
1.8V, 4.5V
950mV @ 250µA
1.49nC @ 5V
66pF @ 10V
±8V
-
250mW (Ta)
420 mOhm @ 606mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75A
NTD50N03RT4
ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.864
MOSFET (Metal Oxide)
25V
7.8A (Ta), 45A (Tc)
4.5V, 11.5V
2V @ 250µA
15nC @ 11.5V
750pF @ 12V
±20V
-
1.5W (Ta), 50W (Tc)
12 mOhm @ 30A, 11.5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9509-55A,127
NXP

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4633pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione2.016
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
60nC @ 5V
4633pF @ 25V
±15V
-
211W (Tc)
8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRL3803STRRPBF
Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione15.900
MOSFET (Metal Oxide)
30V
140A (Tc)
4.5V, 10V
1V @ 250µA
140nC @ 4.5V
5000pF @ 25V
±16V
-
3.8W (Ta), 200W (Tc)
6 mOhm @ 71A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPS040N03LGBKMA1
Infineon Technologies

MOSFET N-CH 30V 90A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
pacchetto: TO-251-3 Stub Leads, IPak
Azione7.456
MOSFET (Metal Oxide)
30V
90A (Tc)
4.5V, 10V
2.2V @ 250µA
38nC @ 10V
3900pF @ 15V
±20V
-
79W (Tc)
4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
2SK2701A
Sanken

MOSFET N-CH 450V TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione3.104
MOSFET (Metal Oxide)
450V
7A (Ta)
10V
4V @ 1µA
-
720pF @ 10V
±30V
-
35W (Tc)
1.1 Ohm @ 3.5A, 10V
-
Through Hole
TO-220F
TO-220-3 Full Pack
TK7A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 450V 6.5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione6.272
MOSFET (Metal Oxide)
450V
6.5A (Ta)
10V
4.4V @ 1mA
11nC @ 10V
540pF @ 25V
±30V
-
35W (Tc)
1.2 Ohm @ 3.3A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
hot IRF730BPBF
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione6.048
MOSFET (Metal Oxide)
400V
6A (Tc)
10V
5V @ 250µA
18nC @ 10V
311pF @ 100V
±30V
-
104W (Tc)
1 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVTFS5C670NLWFTAG
ON Semiconductor

MOSFET N-CH 60V U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacchetto: 8-PowerWDFN
Azione2.928
MOSFET (Metal Oxide)
60V
16A (Ta), 70A (Tc)
4.5V, 10V
2V @ 250µA
20nC @ 10V
1400pF @ 25V
±20V
-
3.2W (Ta), 63W (Tc)
6.8 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
STD13NM50N
STMicroelectronics

MOSFET N-CH 500V DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione3.136
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IPA65R600E6
Infineon Technologies

MOSFET N-CH 650V 7.3A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione5.648
MOSFET (Metal Oxide)
650V
7.3A (Tc)
10V
3.5V @ 210µA
23nC @ 10V
440pF @ 100V
±20V
-
28W (Tc)
600 mOhm @ 2.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-FP
TO-220-3 Full Pack
hot STN4NF20L
STMicroelectronics

MOSFET N-CH 200V 1A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione693.372
MOSFET (Metal Oxide)
200V
1A (Tc)
5V, 10V
3V @ 250µA
0.9nC @ 10V
150pF @ 25V
±20V
-
3.3W (Tc)
1.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
RQ3E130BNTB
Rohm Semiconductor

MOSFET N-CH 30V 13A HSMT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione7.424
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
2.5V @ 1mA
36nC @ 10V
1900pF @ 15V
±20V
-
2W (Ta)
6 mOhm @ 13A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
hot STW54NM65ND
STMicroelectronics

MOSFET N-CH 650V 59A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 24.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione29.676
MOSFET (Metal Oxide)
650V
49A (Tc)
10V
5V @ 250µA
188nC @ 10V
6200pF @ 50V
±25V
-
350W (Tc)
65 mOhm @ 24.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRFZ44VZPBF
Infineon Technologies

MOSFET N-CH 60V 57A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione13.092
MOSFET (Metal Oxide)
60V
57A (Tc)
10V
4V @ 250µA
65nC @ 10V
1690pF @ 25V
±20V
-
92W (Tc)
12 mOhm @ 34A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
APT5010JFLL
Microchip Technology

MOSFET N-CH 500V 41A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
500 V
41A (Tc)
-
5V @ 2.5mA
95 nC @ 10 V
4360 pF @ 25 V
-
-
-
100mOhm @ 20.5A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
TSM035NB04LCZ
Taiwan Semiconductor Corporation

40V, 157A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
18A (Ta), 157A (Tc)
4.5V, 10V
2.5V @ 250µA
111 nC @ 10 V
6350 pF @ 20 V
±20V
-
2W (Ta), 156W (Tc)
3.5mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
AOSP32314
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 14.5A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Azione8.577
MOSFET (Metal Oxide)
30 V
14.5A (Ta)
4.5V, 10V
2.25V @ 250µA
32 nC @ 10 V
1420 pF @ 15 V
±20V
-
3.1W (Ta)
9mOhm @ 14.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
NTMFS5C645NT1G
onsemi

60 V 4.5 M 94 A SINGLE N CHANNEL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: -
Azione4.374
MOSFET (Metal Oxide)
60 V
20A (Ta), 94A (Tc)
10V
4V @ 250µA
20.4 nC @ 10 V
1510 pF @ 25 V
±20V
-
3.7W (Ta), 80W (Tc)
4.5mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
SI2319-TP
Micro Commercial Co

MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
3.5A
4.5V, 10V
2.5V @ 250µA
13.1 nC @ 10 V
548 pF @ 20 V
±20V
-
1.25W
85mOhm @ 3A, 10V
-55°C ~ 150°C
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
HAT2165HWS-E
Renesas Electronics Corporation

MOSFET N-CH 30V 55A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 27.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
55A (Ta)
4.5V, 10V
2.5V @ 1mA
33 nC @ 4.5 V
5180 pF @ 10 V
±20V
-
30W (Tc)
3.3mOhm @ 27.5A, 10V
150°C
Surface Mount
LFPAK
SC-100, SOT-669
MSJP14N65A-BP
Micro Commercial Co

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 30 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 147W
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB (H)
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
14A
10V
4V @ 250µA
25.9 nC @ 10 V
1038 pF @ 30 V
±30V
-
147W
310mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB (H)
TO-220-3
IRFP4310ZPBFXKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.037mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-901
  • Package / Case: TO-247-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
120A (Tc)
10V
4V @ 1.037mA
170 nC @ 10 V
6860 pF @ 50 V
±20V
-
280W (Tc)
6mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-901
TO-247-3
IRFB3306PBFXKMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Azione3.000
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-
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