Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 30V 13A 8-SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.808 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 3V @ 250µA | 31nC @ 5V | - | ±12V | - | 2.5W (Ta) | 11 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 14A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.272 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 2V @ 250µA | 100nC @ 7V | 3520pF @ 25V | ±8V | - | 2.5W (Ta) | 10 mOhm @ 14A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.912 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±20V | - | - | 13 mOhm @ 76A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V 10.2A SO-8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione36.000 |
|
MOSFET (Metal Oxide) | 30V | 10.2A (Ta), 75A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 23.8nC @ 4.5V | 3016pF @ 12V | ±20V | - | 880mW (Ta), 48W (Tc) | 5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
IXYS |
MOSFET N-CH 85V 180A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.040 |
|
MOSFET (Metal Oxide) | 85V | 180A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 7500pF @ 25V | ±20V | - | 430W (Tc) | 5.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 50V 15A TO-220AB
|
pacchetto: TO-220-3 |
Azione16.428 |
|
MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 850pF @ 25V | ±20V | - | 40W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 2.28A SOT883
|
pacchetto: SC-101, SOT-883 |
Azione5.152 |
|
MOSFET (Metal Oxide) | 20V | 2.28A (Tc) | 1.5V, 4.5V | 950mV @ 250µA | 0.89nC @ 4.5V | 45pF @ 20V | ±8V | - | 2.5W (Tc) | 300 mOhm @ 200mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006-3 | SC-101, SOT-883 |
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STMicroelectronics |
MOSFET N-CH 500V 3.8A TO-220
|
pacchetto: TO-220-3 |
Azione95.460 |
|
MOSFET (Metal Oxide) | 500V | 3.8A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 400pF @ 25V | ±30V | - | 80W (Tc) | 2.8 Ohm @ 1.9A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 600V TO220-3
|
pacchetto: TO-220-3 |
Azione6.544 |
|
MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 3.5V @ 250µA | 40nC @ 10V | 1665pF @ 25V | ±20V | - | 106W (Tc) | 380 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 33V 80A TO220
|
pacchetto: TO-220-3 |
Azione168.600 |
|
MOSFET (Metal Oxide) | 33V | 80A (Tc) | 10V | 3V @ 250µA | 89nC @ 10V | 5500pF @ 15V | - | - | 115W (Tc) | 5.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
pacchetto: 8-PowerTDFN |
Azione3.456 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 2V @ 16µA | 5nC @ 10V | 410pF @ 25V | ±20V | - | 3.5W (Ta), 28W (Tc) | 21 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 800V 4A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione9.516 |
|
MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3.5V @ 700µA | 10.05nC @ 10V | 250pF @ 500V | ±20V | Super Junction | 32W (Tc) | 1.4 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione19.260 |
|
MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 3.5V @ 100µA | 10.5nC @ 10V | 231pF @ 100V | ±20V | - | 53W (Tc) | 950 mOhm @ 1.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Fairchild/ON Semiconductor |
MOSFET N CH 25V 40A POWER33
|
pacchetto: 8-PowerTDFN |
Azione13.200 |
|
MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 12nC @ 10V | 1695pF @ 13V | ±12V | - | 3W (Ta), 41W (Tc) | 5 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ? 33 | 8-PowerTDFN |
||
Texas Instruments |
MOSFET N-CH 60V 100A 8SON
|
pacchetto: 8-PowerTDFN |
Azione19.440 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 20nC @ 10V | 1500pF @ 30V | ±20V | - | 3.2W (Ta), 116W (Tc) | 6.8 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 80V 30A SO8
|
pacchetto: PowerPAK? SO-8 |
Azione5.328 |
|
MOSFET (Metal Oxide) | 80V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 32nC @ 10V | 1400pF @ 25V | ±20V | - | 48W (Tc) | 19 mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 40V 40A TSDSON-8
|
pacchetto: 8-PowerTDFN |
Azione274.830 |
|
MOSFET (Metal Oxide) | 40V | 11A (Ta), 40A (Tc) | 10V | 4V @ 14µA | 17nC @ 10V | 1300pF @ 20V | ±20V | - | 2.1W (Ta), 35W (Tc) | 10.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 7A TO236AB
|
pacchetto: - |
Azione35.055 |
|
MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 17 nC @ 4.5 V | 1220 pF @ 10 V | ±8V | - | 610mW (Ta), 8.3W (Tc) | 19mOhm @ 7A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 18.5A TO252
|
pacchetto: - |
Azione18.258 |
|
MOSFET (Metal Oxide) | 30 V | 18.5A (Ta) | 4.5V, 10V | 2.8V @ 250µA | 64.2 nC @ 10 V | 2826 pF @ 15 V | ±25V | - | 1.5W (Ta) | 7mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
P-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
CoolCAD |
SiC Power MOSFET 1200V 12A
|
pacchetto: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 12A (Ta) | 15V | 3.2V @ 5mA | 40 nC @ 15 V | 1810 pF @ 200 V | +15V, -5V | - | 100W (Tc) | 135mOhm @ 10A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-4 |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
pacchetto: - |
Azione2.985 |
|
MOSFET (Metal Oxide) | 40 V | 120A | 10V | - | - | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8SH
|
pacchetto: - |
Azione17.949 |
|
MOSFET (Metal Oxide) | 20 V | 14A (Ta) | 4.5V, 10V | 2V @ 250µA | 30 nC @ 4.5 V | - | ±16V | - | 1.5W (Ta) | 4.9mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 900MA DFN0606-3
|
pacchetto: - |
Azione58.818 |
|
MOSFET (Metal Oxide) | 30 V | 900mA (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 0.93 nC @ 4.5 V | 4540 pF @ 15 V | ±8V | - | 360mW (Ta), 2.23W (Tc) | 460mOhm @ 700mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN0606-3 | 3-XFDFN |
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Vishay Siliconix |
N-CHANNEL 60 V (D-S) MOSFET POWE
|
pacchetto: - |
Azione17.808 |
|
MOSFET (Metal Oxide) | 60 V | 15.6A (Ta), 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 28 nC @ 10 V | 1180 pF @ 30 V | ±20V | - | 3.9W (Ta), 41.6W (Tc) | 8.9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
NXP |
NX2020P1X
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
YAGEO XSEMI |
MOSFET N-CH 30V 26.1A 60A PMPAK
|
pacchetto: - |
Azione3.000 |
|
MOSFET (Metal Oxide) | 30 V | 26.1A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 24 nC @ 4.5 V | 2400 pF @ 15 V | ±20V | - | 5W (Ta), 36.7W (Tc) | 4.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 5 x 6 | 8-PowerLDFN |
||
Central Semiconductor Corp |
MOSFET N-CH 100V 3A SOT-223
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 3A (Ta) | 10V | 4V @ 250µA | 15 nC @ 10 V | 975 pF @ 25 V | 20V | - | 2W (Ta) | 150mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |