Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 35A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.696 |
|
MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 68W (Tc) | 31 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 20V 24A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.352 |
|
MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 44nC @ 4.5V | 1460pF @ 15V | ±8V | - | - | 42 mOhm @ 12A, 4.5V | - | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Renesas Electronics America |
MOSFET N-CH 80V LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione2.832 |
|
MOSFET (Metal Oxide) | 80V | 25A (Ta) | 10V | - | 27nC @ 10V | 2000pF @ 10V | ±20V | - | 55W (Tc) | 13 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
||
ON Semiconductor |
MOSFET N-CH 500V 2A TP-FA
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione60.072 |
|
MOSFET (Metal Oxide) | 500V | 2A (Ta) | 4V, 10V | - | 8.7nC @ 10V | 175pF @ 30V | ±20V | - | 1W (Ta), 20W (Tc) | 4.9 Ohm @ 1A, 10V | 150°C (TJ) | Surface Mount | TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione3.776 |
|
MOSFET (Metal Oxide) | 20V | 12A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 140nC @ 5V | - | ±8V | - | 1.9W (Ta) | 7.7 mOhm @ 19A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Infineon Technologies |
MOSFET N-CH TO-252-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.712 |
|
MOSFET (Metal Oxide) | 700V | 5.2A (Tc) | 10V | 3.5V @ 100µA | 10.5nC @ 10V | 225pF @ 100V | ±20V | - | 53W (Tc) | 1.5 Ohm @ 1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 600V 45A TO-264
|
pacchetto: TO-264-3, TO-264AA |
Azione2.384 |
|
MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 5V @ 2.5mA | 215nC @ 10V | 8590pF @ 25V | ±30V | - | 780W (Tc) | 150 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Vishay Siliconix |
MOSFET N-CH 500V 30A TO-247AC
|
pacchetto: TO-247-3 |
Azione5.104 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 5V @ 250µA | 96nC @ 10V | 2550pF @ 100V | ±30V | - | 390W (Tc) | 150 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 9.5A TO220
|
pacchetto: TO-220-3 |
Azione22.800 |
|
MOSFET (Metal Oxide) | 100V | 9.5A (Ta), 105A (Tc) | 7V, 10V | 3.9V @ 250µA | 83nC @ 10V | 5200pF @ 50V | ±25V | - | 2.1W (Ta), 333W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.6A TO92-3
|
pacchetto: E-Line-3 |
Azione6.944 |
|
MOSFET (Metal Oxide) | 60V | 600mA (Ta) | 5V, 10V | 3V @ 1mA | - | 100pF @ 25V | ±20V | - | 700mW (Ta) | 1 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Nexperia USA Inc. |
PMT200EPEA/SOT223/SC-73
|
pacchetto: - |
Azione4.784 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 70A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.952 |
|
MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4V @ 250µA | 128nC @ 10V | 8035pF @ 25V | ±20V | - | 167W (Tc) | 5.5 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N CH 12V 11A U-DFN2020-6E
|
pacchetto: 6-UDFN Exposed Pad |
Azione5.600 |
|
MOSFET (Metal Oxide) | 12V | 11A (Ta) | 1.2V, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | 2425pF @ 10V | ±8V | - | 690mW (Ta) | 10 mOhm @ 9.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
IXYS |
MOSFET N-CH 75V 400A TO-247
|
pacchetto: TO-247-3 |
Azione4.672 |
|
MOSFET (Metal Oxide) | 75V | 400A (Tc) | 10V | 4V @ 250µA | 420nC @ 10V | 24000pF @ 25V | ±20V | - | 1000W (Tc) | 2.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione10.284 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 100V 50A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione22.140 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 4V @ 250µA | 80nC @ 10V | 1780pF @ 25V | ±20V | - | 150W (Tc) | 28 mOhm @ 25A, 10V | -50°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 19A POWER56
|
pacchetto: 8-PowerTDFN |
Azione342.960 |
|
MOSFET (Metal Oxide) | 30V | 19A (Ta), 28A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 10V | 2960pF @ 15V | ±20V | - | 2.5W (Ta), 48W (Tc) | 5 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 75V 180A H2PAK-6
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione19.188 |
|
MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4V @ 250µA | 87nC @ 10V | 6800pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D2Pak (6 Leads + Tab) |
||
Renesas Electronics Corporation |
MOSFET N-CH 75V 90A TO220FP
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 90A (Ta) | - | - | 89 nC @ 10 V | 6450 pF @ 10 V | - | - | 30W (Tc) | 4.8mOhm @ 45A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Panjit International Inc. |
SOT-23, MOSFET
|
pacchetto: - |
Azione892.089 |
|
MOSFET (Metal Oxide) | 50 V | 500mA (Ta) | 2.5V, 10V | 1.5V @ 250µA | 1 nC @ 4.5 V | 50 pF @ 25 V | ±20V | - | 500mW (Ta) | 1.6Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Micro Commercial Co |
MOSFET N-CH 100V 50A DFN5060
|
pacchetto: - |
Azione80.835 |
|
MOSFET (Metal Oxide) | 100 V | 50A (Tj) | 4.5V, 10V | 3V @ 250µA | 50 nC @ 10 V | 2808 pF @ 15 V | ±20V | - | 75W | 7mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 600V 43A T-MAX
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 5V @ 2.5mA | 130 nC @ 10 V | 5630 pF @ 25 V | - | - | - | 130mOhm @ 21.5A, 10V | - | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 57A (Ta), 195A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 180 nC @ 10 V | 9985 pF @ 20 V | ±20V | - | 8.3W (Ta), 272W (Tc) | 1.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 100MA SSM
|
pacchetto: - |
Azione9.285 |
|
MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.7V @ 100µA | - | 9.1 pF @ 3 V | ±20V | - | 100mW (Ta) | 12Ohm @ 10mA, 4V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
||
Vishay Siliconix |
P-CHANNEL 20-V (D-S) MOSFET
|
pacchetto: - |
Azione15.360 |
|
MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 4.5V, 10V | 3V @ 250µA | 30 nC @ 10 V | - | ±20V | - | 1.14W (Ta) | 30mOhm @ 6.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Transphorm |
GANFET N-CH 650V 25A 3PQFN
|
pacchetto: - |
Request a Quote |
|
GaNFET (Cascode Gallium Nitride FET) | 650 V | 25A (Tc) | 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | 600 pF @ 400 V | ±20V | - | 96W (Tc) | 85mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
||
onsemi |
MOSFET N-CH 60V 46A DPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 10A (Ta), 27A (Tc) | 4.5V, 10V | 2.1V @ 20µA | 9.6 nC @ 10 V | 700 pF @ 25 V | ±20V | - | 3.6W (Ta), 25W (Tc) | 16.5mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
pacchetto: - |
Azione465 |
|
MOSFET (Metal Oxide) | 60 V | 40A (Ta), 198A (Tc) | 6V, 10V | 3.3V @ 246µA | 305 nC @ 10 V | 13800 pF @ 30 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |