Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 22A DIRECTFET
|
pacchetto: DirectFET? Isometric SQ |
Azione2.320 |
|
MOSFET (Metal Oxide) | 25V | 22A (Ta), 95A (Tc) | 4.5V, 10V | 2.4V @ 50µA | 32nC @ 4.5V | 2880pF @ 13V | ±20V | - | 2.2W (Ta), 42W (Tc) | 3 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? SQ | DirectFET? Isometric SQ |
||
Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET
|
pacchetto: DirectFET? Isometric MN |
Azione192.336 |
|
MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 4.9V @ 150µA | 50nC @ 10V | 2120pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 7 mOhm @ 17A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MN | DirectFET? Isometric MN |
||
Infineon Technologies |
MOSFET N-CH 20V 49A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione28.800 |
|
MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 810pF @ 10V | ±20V | - | 40W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 15A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.408 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 24nC @ 10V | 1380pF @ 15V | ±20V | - | 3.1W (Ta) | 7.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 70A TO-251
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione5.776 |
|
MOSFET (Metal Oxide) | 30V | 23A (Ta), 70A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 62nC @ 10V | 3130pF @ 15V | ±20V | - | 2.5W (Ta), 83W (Tc) | 2.7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
||
Renesas Electronics America |
MOSFET N-CH 55V 55A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione120.012 |
|
MOSFET (Metal Oxide) | 55V | 55A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 96nC @ 10V | 4800pF @ 25V | ±20V | - | 1.2W (Ta), 77W (Tc) | 9.5 mOhm @ 28A, 10V | 175°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 20V 85A TO220AB
|
pacchetto: TO-220-3 |
Azione5.904 |
|
MOSFET (Metal Oxide) | 20V | 85A (Tc) | 2.5V, 4.5V | 450mV @ 2mA (Min) | 200nC @ 4.5V | 21250pF @ 20V | ±8V | - | 250W (Tc) | 3 mOhm @ 30A, 4.5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-220
|
pacchetto: TO-220-3 |
Azione7.744 |
|
MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 25nC @ 10V | 490pF @ 25V | ±20V | - | 50W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3
|
pacchetto: TO-220-3 |
Azione3.248 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 150µA | 145nC @ 10V | 9600pF @ 25V | ±20V | - | 214W (Tc) | 2.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 200V 100A TO-264
|
pacchetto: TO-264-3, TO-264AA |
Azione6.464 |
|
MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | ±30V | - | 520W (Tc) | 22 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
IXYS |
MOSFET P-CH 500V 11A TO-247AD
|
pacchetto: TO-247-3 |
Azione5.440 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 5V @ 250µA | 130nC @ 10V | 4700pF @ 25V | ±20V | - | 300W (Tc) | 750 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Renesas Electronics America |
MOSFET N-CH 30V 60A 5-LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione2.448 |
|
MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | - | 32nC @ 4.5V | 5000pF @ 10V | +16V, -12V | - | 65W (Tc) | 2.8 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
||
Sanken |
MOSFET N-CH 30V 85A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.784 |
|
MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 2.5V @ 1.5mA | 94.2nC @ 10V | 6200pF @ 15V | ±20V | - | 135W (Tc) | 2.4 mOhm @ 110A, 10V | 150°C (TJ) | Surface Mount | TO-263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET
|
pacchetto: - |
Azione6.848 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | ±10V | - | 1W (Ta) | 30.1 mOhm @ 4A, 4.5V | 150°C (TJ) | Surface Mount | - | - |
||
STMicroelectronics |
MOSFET N-CH 800V 2A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.688 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 5V @ 100µA | 3nC @ 10V | 95pF @ 100V | 30V | - | 45W (Tc) | 4.5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Sanken |
MOSFET N-CH 60V 9A 8DFN
|
pacchetto: 8-PowerTDFN |
Azione4.624 |
|
MOSFET (Metal Oxide) | 60V | 9A (Ta) | 4.5V, 10V | 2.5V @ 650µA | 38.6nC @ 10V | 2520pF @ 25V | ±20V | - | 3.1W (Ta), 59W (Tc) | 8.9 mOhm @ 23.6A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 4.1A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione442.296 |
|
MOSFET (Metal Oxide) | 150V | 4.1A (Ta) | 6V, 10V | 4V @ 250µA | 13nC @ 10V | 760pF @ 75V | ±20V | - | 2.5W (Ta), 5W (Tc) | 67 mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP.,
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.480 |
|
MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 5V @ 250µA | 8.6nC @ 10V | 375pF @ 100V | ±30V | - | 45W (Tc) | 1.55 Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Texas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR
|
pacchetto: 3-XFDFN |
Azione28.080 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 8V | 1.2V @ 250µA | 1.42nC @ 4.5V | 230pF @ 10V | -12V | - | 500mW (Ta) | 94 mOhm @ 500mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Diodes Incorporated |
MOSFET P-CH 30V 2.5A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione143.292 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 8.2nC @ 10V | 371.3pF @ 15V | ±20V | - | 760mW (Ta) | 90 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild Semiconductor |
FDS8433A - MOSFET 20V 47.0 MOHM
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 28 nC @ 5 V | 1130 pF @ 10 V | ±8V | - | 2.5W (Ta) | 47mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
N-CHANNEL 80-V (D-S) 175C MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60 nC @ 10 V | 3000 pF @ 25 V | ±20V | - | 68W (Tc) | 8.2mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO263-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | 4975 pF @ 400 V | ±30V | - | 227W (Tc) | 50mOhm @ 24.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
EPC |
GANFET N-CH 200V 48A DIE
|
pacchetto: - |
Azione38.673 |
|
GaNFET (Gallium Nitride) | 200 V | 48A (Ta) | 5V | 2.5V @ 7mA | 11 nC @ 5 V | 1140 pF @ 100 V | +6V, -4V | - | - | 8mOhm @ 20A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Taiwan Semiconductor Corporation |
MOSFET P-CH 60V 20A TO220
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 22.4 nC @ 10 V | 1250 pF @ 30 V | ±20V | - | 66W (Tc) | 48mOhm @ 8A, 10V | -50°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 150V 2.2A SOT223
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 2.2A (Ta) | 10V | 5V @ 250µA | 49 nC @ 10 V | 1280 pF @ 25 V | ±20V | - | 2.5W (Ta) | 240mOhm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Micro Commercial Co |
N-CHANNEL MOSFET, DFN5060
|
pacchetto: - |
Azione12.894 |
|
MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 15 nC @ 10 V | 1490 pF @ 15 V | ±20V | - | 38W | 9mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 100V 120A TO220AB
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 190 nC @ 10 V | 7000 pF @ 50 V | ±20V | - | 375W (Tc) | - | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |