Pagina 1355 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.355/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFR3710ZTRL
Infineon Technologies

MOSFET N-CH 100V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.312
MOSFET (Metal Oxide)
100V
42A (Tc)
10V
4V @ 250µA
100nC @ 10V
2930pF @ 25V
±20V
-
140W (Tc)
18 mOhm @ 33A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
TPCP8003-H(TE85L,F
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 2.2A PS-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PS-8 (2.9x2.4)
  • Package / Case: 8-SMD, Flat Lead
pacchetto: 8-SMD, Flat Lead
Azione3.984
MOSFET (Metal Oxide)
100V
2.2A (Ta)
4.5V, 10V
2.3V @ 1mA
7.5nC @ 10V
360pF @ 10V
±20V
-
840mW (Ta)
180 mOhm @ 1.1A, 10V
150°C (TJ)
Surface Mount
PS-8 (2.9x2.4)
8-SMD, Flat Lead
PH9030L,115
NXP

MOSFET N-CH 30V 63A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: SC-100, SOT-669
Azione4.656
MOSFET (Metal Oxide)
30V
63A (Tc)
4.5V, 10V
2V @ 1mA
13.3nC @ 4.5V
1565pF @ 12V
±20V
-
62.5W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot IXTP64N055T
IXYS

MOSFET N-CH 55V 64A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione558.012
MOSFET (Metal Oxide)
55V
64A (Tc)
10V
4V @ 25µA
37nC @ 10V
1420pF @ 25V
±20V
-
130W (Tc)
13 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
ZVP3310FTC
Diodes Incorporated

MOSFET P-CH 100V 0.075A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.432
MOSFET (Metal Oxide)
100V
75mA (Ta)
10V
3.5V @ 1mA
-
50pF @ 25V
±20V
-
330mW (Ta)
20 Ohm @ 150mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TSM2307CX RFG
TSC America Inc.

MOSFET, SINGLE, P-CHANNEL, -30V,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.112
MOSFET (Metal Oxide)
30V
3A (Tc)
4.5V, 10V
3V @ 250µA
10nC @ 10V
565pF @ 30V
±20V
-
1.25W (Ta)
95 mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot IRLU3705ZPBF
Infineon Technologies

MOSFET N-CH 55V 42A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione6.688
MOSFET (Metal Oxide)
55V
42A (Tc)
4.5V, 10V
3V @ 250µA
66nC @ 5V
2900pF @ 25V
±16V
-
130W (Tc)
8 mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot SIE874DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 60A POLARPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.17 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 10-PolarPAK? (L)
  • Package / Case: 10-PolarPAK? (L)
pacchetto: 10-PolarPAK? (L)
Azione36.000
MOSFET (Metal Oxide)
20V
60A (Tc)
4.5V, 10V
2.2V @ 250µA
145nC @ 10V
6200pF @ 10V
±20V
-
5.2W (Ta), 125W (Tc)
1.17 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
10-PolarPAK? (L)
10-PolarPAK? (L)
GA05JT03-46
GeneSiC Semiconductor

TRANS SJT 300V 9A

  • FET Type: -
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A
  • Operating Temperature: -55°C ~ 225°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-46
  • Package / Case: TO-46-3
pacchetto: TO-46-3
Azione6.768
SiC (Silicon Carbide Junction Transistor)
300V
9A (Tc)
-
-
-
-
-
-
20W (Tc)
240 mOhm @ 5A
-55°C ~ 225°C (TJ)
Through Hole
TO-46
TO-46-3
hot APT36N90BC3G
Microsemi Corporation

MOSFET N-CH 900V 36A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7463pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione4.448
MOSFET (Metal Oxide)
900V
36A (Tc)
10V
3.5V @ 2.9mA
252nC @ 10V
7463pF @ 25V
±20V
Super Junction
390W (Tc)
120 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 [B]
TO-247-3
hot FDB15N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 15A TO-263AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione442.440
MOSFET (Metal Oxide)
500V
15A (Tc)
10V
4V @ 250µA
41nC @ 10V
1850pF @ 25V
±30V
-
300W (Tc)
380 mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP9N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 9A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.344
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
4V @ 250µA
29nC @ 10V
1240pF @ 100V
±30V
-
83.3W (Tc)
385 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
RRH140P03GZETB
Rohm Semiconductor

MOSFET P-CH 30V 14A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 650mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.896
MOSFET (Metal Oxide)
30V
14A (Ta)
4V, 10V
2.5V @ 1mA
150nC @ 10V
8000pF @ 10V
±20V
-
650mW (Ta)
7 mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot FDP120N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 74A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5605pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 74A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione475.920
MOSFET (Metal Oxide)
100V
74A (Tc)
10V
4.5V @ 250µA
86nC @ 10V
5605pF @ 25V
±20V
-
170W (Tc)
12 mOhm @ 74A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDD5810_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 37A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione510.000
MOSFET (Metal Oxide)
60V
7.4A (Ta), 37A (Tc)
5V, 10V
2V @ 250µA
34nC @ 10V
1890pF @ 25V
±20V
-
72W (Tc)
22 mOhm @ 32A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
NVD5807NT4G-VF01
ON Semiconductor

MOSFET N-CH 40V 23A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.568
MOSFET (Metal Oxide)
40V
23A (Tc)
4.5V, 10V
2.5V @ 250µA
20nC @ 10V
603pF @ 25V
±20V
-
33W (Tc)
31 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
SIHB33N60EF-GE3
Vishay Siliconix

MOSFET N-CH 600V 33A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3454pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 16.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione26.190
MOSFET (Metal Oxide)
600V
33A (Tc)
10V
4V @ 250µA
155nC @ 10V
3454pF @ 100V
±30V
-
278W (Tc)
98 mOhm @ 16.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRLZ44NPBF
Infineon Technologies

MOSFET N-CH 55V 47A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.856
MOSFET (Metal Oxide)
55V
47A (Tc)
4V, 10V
2V @ 250µA
48nC @ 5V
1700pF @ 25V
±16V
-
3.8W (Ta), 110W (Tc)
22 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BSS138BKWT106
Rohm Semiconductor

NCH 60V 380MA, SOT-323, SMALL SI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 680mOhm @ 380mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
Azione24.930
MOSFET (Metal Oxide)
60 V
380mA (Ta)
2.5V, 10V
2V @ 10µA
-
47 pF @ 30 V
±20V
-
200mW (Ta)
680mOhm @ 380mA, 10V
150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
2SK3634-AZ
Renesas Electronics Corporation

MOSFET N-CH 200V 6A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
pacchetto: -
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MOSFET (Metal Oxide)
200 V
6A (Tc)
-
4.5V @ 1mA
9 nC @ 10 V
270 pF @ 10 V
-
-
-
600mOhm @ 3A, 10V
-
Through Hole
TO-251
TO-251-3 Short Leads, IPAK, TO-251AA
AUIRFS3207ZTRL
Infineon Technologies

MOSFET N-CH 75V 170A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
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MOSFET (Metal Oxide)
75 V
120A (Tc)
-
4V @ 150µA
170 nC @ 10 V
6920 pF @ 50 V
-
-
300W (Tc)
4.1mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP018N10N5AKSA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 205A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.83mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
pacchetto: -
Azione1.422
MOSFET (Metal Oxide)
100 V
33A (Ta), 205A (Tc)
6V, 10V
3.8V @ 270µA
210 nC @ 10 V
16000 pF @ 50 V
±20V
-
3.8W (Ta), 375W (Tc)
1.83mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IRF613
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: -
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MOSFET (Metal Oxide)
150 V
2.6A (Tc)
10V
4V @ 250µA
8.2 nC @ 10 V
135 pF @ 25 V
±20V
-
43W (Tc)
2.4Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
MCAC180N04YHE3-TP
Micro Commercial Co

N-CHANNEL MOSFET,DFN5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tj)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
pacchetto: -
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MOSFET (Metal Oxide)
40 V
180A (Tc)
10V
4V @ 250µA
56 nC @ 10 V
4380 pF @ 25 V
±20V
-
115W (Tj)
2mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
R6027YNXC7G
Rohm Semiconductor

NCH 600V 14A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V, 12V
6V @ 2mA
40 nC @ 10 V
1670 pF @ 100 V
±30V
-
70W (Tc)
135mOhm @ 7A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
IXTH58N25L2
IXYS

MOSFET N-CH 250V 58A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
pacchetto: -
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MOSFET (Metal Oxide)
250 V
58A (Tc)
10V
4.5V @ 250µA
330 nC @ 10 V
9200 pF @ 25 V
±20V
-
540W (Tc)
64mOhm @ 29A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
MCH3307-TL-E-SY
Sanyo

MOSFET P-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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PMV20EN-ML
MOSLEADER

N 30V 7.6A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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