Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 800V 5.7A TO251-3
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.720 |
|
MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 3.9V @ 250µA | 31nC @ 10V | 785pF @ 100V | ±20V | - | 83W (Tc) | 950 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 20V 75A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.976 |
|
MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH
|
pacchetto: TO-220-3 Full Pack |
Azione20.784 |
|
MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | - | 23.5nC @ 10V | 600pF @ 30V | ±30V | - | 2W | 1.1 Ohm @ 3.5A, 10V | 150°C | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 30V SO8FL
|
pacchetto: - |
Azione3.680 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 19A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.416 |
|
MOSFET (Metal Oxide) | 60V | 19A (Ta), 140A (Tc) | 6V, 10V | 3.2V @ 250µA | 94nC @ 10V | 8400pF @ 30V | ±20V | - | 2.1W (Ta), 333W (Tc) | 3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 800V 31A SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione7.856 |
|
MOSFET (Metal Oxide) | 800V | 31A | 10V | 5V @ 2.5mA | 303nC @ 10V | 9326pF @ 25V | ±30V | - | 543W (Tc) | 210 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
ON Semiconductor |
MOSFET P-CH 30V DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.808 |
|
MOSFET (Metal Oxide) | 40V | 55A (Ta) | 4.5V, 10V | 2.6V @ 1mA | 47nC @ 10V | 2400pF @ 20V | ±20V | - | 60W (Tc) | 17 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione116.148 |
|
MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | ±20V | - | 4.6W (Ta), 46W (Tc) | 7.5 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Microsemi Corporation |
MOSFET N-CH 500V 37A TO-247
|
pacchetto: TO-247-3 |
Azione7.552 |
|
MOSFET (Metal Oxide) | 500V | 37A (Tc) | 10V | 5V @ 1mA | 145nC @ 10V | 5710pF @ 25V | ±30V | - | 520W (Tc) | 150 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 100A TO263-3
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione12.594 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 5110pF @ 25V | ±20V | - | 300W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione8.304 |
|
MOSFET (Metal Oxide) | 12V | 35A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 110nC @ 8V | 3720pF @ 6V | ±8V | - | 3.8W (Ta), 52W (Tc) | 3.8 mOhm @ 15A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 11A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione1.343.916 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 42nC @ 5V | 3000pF @ 15V | ±20V | - | 2.5W (Ta) | 14 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 4A 3X3 MLP
|
pacchetto: 6-MLP, Power33 |
Azione191.760 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 3.8nC @ 4.5V | 273pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.7W (Ta) | 100 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | MicroFET 3x3mm | 6-MLP, Power33 |
||
Vishay Siliconix |
MOSFET N-CH 30V 9A 1212-8 PPAK
|
pacchetto: PowerPAK? 1212-8 |
Azione2.484.372 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 3V @ 250µA | 28nC @ 10V | 1100pF @ 15V | ±25V | - | 1.5W (Ta) | 11 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Vishay Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT
|
pacchetto: 4-XFBGA |
Azione2.720 |
|
MOSFET (Metal Oxide) | 20V | - | 1.2V, 4.5V | 800mV @ 250µA | 6nC @ 4.5V | 400pF @ 10V | ±5V | - | 500mW (Ta) | 75 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
||
Infineon Technologies |
MOSFET N-CH 34V 17A TDSON-8
|
pacchetto: 8-PowerTDFN |
Azione52.020 |
|
MOSFET (Metal Oxide) | 34V | 17A (Ta), 98A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 34nC @ 10V | 2800pF @ 15V | ±20V | - | 2.5W (Ta), 57W (Tc) | 3.8 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 55V 30A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione28.800 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | ±16V | - | 3.8W (Ta), 68W (Tc) | 35 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 63A 8TDSON
|
pacchetto: 8-PowerTDFN |
Azione82.782 |
|
MOSFET (Metal Oxide) | 100V | 63A (Tc) | 6V, 10V | 3.5V @ 45µA | 35nC @ 10V | 2500pF @ 50V | ±20V | - | 78W (Tc) | 10.9 mOhm @ 46A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
IPS70R2K0CE - 700V COOLMOS N-CHA
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
MOSLEADER |
Single-P -30V -3.8A SOT-23
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Littelfuse Inc. |
SICFET N-CH 1700V 6.4A TO263-7L
|
pacchetto: - |
Azione3.393 |
|
SiCFET (Silicon Carbide) | 1700 V | 6.4A (Tc) | 20V | 4V @ 1mA | 11 nC @ 20 V | 200 pF @ 1000 V | +22V, -6V | - | 65W (Tc) | 1Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Alpha & Omega Semiconductor Inc. |
FET N CHANNEL 80V
|
pacchetto: - |
Azione175.110 |
|
MOSFET (Metal Oxide) | 80 V | 44A (Ta), 140A (Tc) | 8V, 10V | 3.8V @ 250µA | 110 nC @ 10 V | 5750 pF @ 40 V | ±20V | - | 10W (Ta), 310W (Tc) | 2.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET 150V 43A DIE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 43A | 10V | - | - | - | - | - | - | 42mOhm @ 43A, 10V | - | Surface Mount | Die | Die |
||
onsemi |
NTNS41006 - SINGLE P?CHANNEL SMA
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRENCH <= 40V
|
pacchetto: - |
Azione13.104 |
|
MOSFET (Metal Oxide) | 40 V | 301A (Tc) | 4.5V, 10V | 2V @ 250µA | 133 nC @ 10 V | 9520 pF @ 20 V | ±20V | - | 167W (Tc) | 1.24mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WSON-8-2 | 8-PowerWDFN |
||
onsemi |
SUPERFET3 FRFET AUTOMOTIVE 110MO
|
pacchetto: - |
Azione1.350 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 5V @ 740µA | 59 nC @ 10 V | 2530 pF @ 400 V | ±30V | - | 240W (Tc) | 110mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Central Semiconductor Corp |
MOSFET P-CH 30V 2.4A DIE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 2.4A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 9.6 nC @ 5 V | 800 pF @ 10 V | 12V | - | - | 91mOhm @ 1.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |