Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 250V 100MA SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione7.328 |
|
MOSFET (Metal Oxide) | 250V | 100mA (Ta) | 0V, 10V | 1V @ 56µA | 3.5nC @ 5V | 76pF @ 25V | ±20V | Depletion Mode | 360mW (Ta) | 14 Ohm @ 0.1mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.360 |
|
MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 100A DPAK
|
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Azione7.120 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2V @ 100µA | 89.7nC @ 10V | 3320pF @ 25V | ±20V | - | 150W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.504 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 110W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 55A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione12.348 |
|
MOSFET (Metal Oxide) | 30V | 55A (Tc) | 4.5V, 10V | 1V @ 250µA | 50nC @ 4.5V | 1600pF @ 25V | ±16V | - | 107W (Tc) | 19 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 30V 14A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione36.252 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 3V @ 250µA | 40nC @ 4.5V | - | ±20V | - | 1.8W (Ta) | 4.7 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Microsemi Corporation |
MOSFET N-CH 800V 17A TO-247
|
pacchetto: TO-247-3 |
Azione3.600 |
|
MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 3.9V @ 1mA | 90nC @ 10V | 2250pF @ 25V | ±20V | - | 208W (Tc) | 290 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 600V 26A PLUS220
|
pacchetto: TO-220-3, Short Tab |
Azione5.280 |
|
MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 5V @ 4mA | 72nC @ 10V | 4150pF @ 25V | ±30V | - | 460W (Tc) | 270 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
NXP |
MOSFET N-CH 110V 24.8A SOT186A
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione5.392 |
|
MOSFET (Metal Oxide) | 110V | 24.8A (Tc) | 10V | 4V @ 1mA | 40nC @ 10V | 1700pF @ 25V | ±20V | - | 56.8W (Tc) | 40 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.27A TO92-3
|
pacchetto: E-Line-3, Formed Leads |
Azione4.528 |
|
MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±20V | - | 625mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3, Formed Leads |
||
Vishay Siliconix |
MOSFET N-CH 60V 7.7A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione16.656 |
|
MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 48A TO-220
|
pacchetto: TO-220-3 |
Azione26.400 |
|
MOSFET (Metal Oxide) | 30V | 48A (Ta) | 4.5V, 10V | 3V @ 250µA | 18nC @ 5V | 1250pF @ 15V | ±20V | - | 52W (Tc) | 13 mOhm @ 26A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH 300V 73A TO-264AA
|
pacchetto: TO-264-3, TO-264AA |
Azione5.312 |
|
MOSFET (Metal Oxide) | 300V | 73A (Tc) | 10V | 4V @ 8mA | 360nC @ 10V | 9000pF @ 25V | ±20V | - | 500W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 250V 25A ISOPLUS247
|
pacchetto: ISOPLUS247? |
Azione3.168 |
|
MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 4V @ 250µA | 136nC @ 10V | 3950pF @ 25V | ±20V | - | 150W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Vishay Siliconix |
MOSFET N-CH 650V 22A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.856 |
|
MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2415pF @ 100V | ±30V | - | 227W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 27A 8TSON-ADV
|
pacchetto: 8-PowerVDFN |
Azione5.088 |
|
MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | ±20V | - | 700mW (Ta), 32W (Tc) | 6 mOhm @ 13.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
STMicroelectronics |
MOSFET N-CH 800V 17A TO-247
|
pacchetto: TO-247-3 |
Azione38.952 |
|
MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 2070pF @ 50V | ±30V | - | 190W (Tc) | 295 mOhm @ 8.5A, 10V | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 40V 11A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione175.080 |
|
MOSFET (Metal Oxide) | 40V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 56nC @ 4.5V | 4350pF @ 20V | ±20V | - | 2.4W (Ta) | 13 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SO-8 T&R 2
|
pacchetto: - |
Azione6.480 |
|
MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 17.3 nC @ 10 V | 969 pF @ 15 V | ±20V | - | 1.2W (Ta) | 32mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
SILICON CARBIDE MOSFET, NCHANNEL
|
pacchetto: - |
Azione1.359 |
|
SiCFET (Silicon Carbide) | 650 V | 55A (Tc) | 15V, 18V | 4.3V @ 8mA | 105 nC @ 18 V | 1870 pF @ 325 V | +22V, -8V | - | 187W (Tc) | 50mOhm @ 25A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 300MA SSM
|
pacchetto: - |
Azione407.643 |
|
MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 150mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
||
Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT6
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 5.2 nC @ 5 V | 480 pF @ 10 V | ±20V | - | 950mW (Ta) | 125mOhm @ 1.5A, 4V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 5.5A (Ta) | 10V | 4V @ 250µA | 79 nC @ 20 V | 1225 pF @ 25 V | ±20V | - | 2.5W (Ta) | 39mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Microchip Technology |
RH MOSFET 250V TO-254AA
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 600V 19A 8HSOF
|
pacchetto: - |
Azione12.000 |
|
MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1199 pF @ 400 V | ±20V | - | 116W (Tc) | 145mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
IXYS |
DISCRETE MOSFET 110A 650V X3 SOT
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 130A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 129 nC @ 10 V | 7400 pF @ 25 V | ±20V | - | 150W (Tj) | 1.75mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 4A (Tc) | 5V | 2.5V @ 250µA | 8 nC @ 10 V | - | ±10V | - | 30W (Tc) | 600mOhm @ 1A, 5V | -55°C ~ 175°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPak, TO-251AA |