Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
MOSFET P-CH
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione120.000 |
|
MOSFET (Metal Oxide) | 40V | 10A (Ta) | 1.8V, 4.5V | 1.4V @ 1mA | 8nC @ 4.5V | 650pF @ 20V | ±10V | - | 1W (Ta), 15W (Tc) | 112 mOhm @ 5A, 4.5V | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
pacchetto: - |
Azione5.664 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 3.4A 4WLCSP
|
pacchetto: 4-UFBGA, WLCSP |
Azione7.952 |
|
MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 20nC @ 4.5V | 1630pF @ 15V | ±12V | - | 800mW (Ta) | 45 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (1.6x1.6) | 4-UFBGA, WLCSP |
||
Vishay Siliconix |
MOSFET N-CH 12V 50A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione60.000 |
|
MOSFET (Metal Oxide) | 12V | 50A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 150nC @ 4.5V | 12350pF @ 6V | ±8V | - | 3.5W (Ta), 7.8W (Tc) | 1.7 mOhm @ 20A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 20V 1.9A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione564.804 |
|
MOSFET (Metal Oxide) | 20V | 1.9A (Ta) | 2.5V, 4.5V | 700mV @ 250µA | 3nC @ 4.5V | 303pF @ 15V | ±12V | - | 625mW (Ta) | 120 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 11.4A TO262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.896 |
|
MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | ±20V | - | 104.2W (Tc) | 310 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 37A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.672 |
|
MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 3.8V @ 250µA | 40nC @ 10V | 2154pF @ 100V | ±30V | - | 417W (Tc) | 109 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7.5A TO-220SIS
|
pacchetto: TO-220-3 Full Pack |
Azione3.888 |
|
MOSFET (Metal Oxide) | 600V | 7.5A (Ta) | 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 45W (Tc) | 1 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 40V 150A SO8FL
|
pacchetto: 8-PowerTDFN |
Azione7.056 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 50nC @ 10V | 3100pF @ 20V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET P-CH 30V 5.1A TSOT-26
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione3.968 |
|
MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 20nC @ 10V | 880pF @ 15V | ±20V | - | 1.2W (Ta) | 42 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
STMicroelectronics |
MOSFET N-CH 800V 3A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.952 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 5V @ 100µA | 10.5nC @ 10V | 175pF @ 100V | ±30V | - | 60W (Tc) | 2.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione38.580 |
|
MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | - | 40W (Tc) | 480 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 3.1A 2X2MLP
|
pacchetto: 6-VDFN Exposed Pad |
Azione113.004 |
|
MOSFET (Metal Oxide) | 20V | 3.1A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | 720pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.4W (Tj) | 95 mOhm @ 3.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
||
Infineon Technologies |
MOSFET P-CH 150V 13A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione15.060 |
|
MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 860pF @ 25V | ±20V | - | 3.8W (Ta), 110W (Tc) | 290 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET N-CH 100V 8.3A
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.368 |
|
MOSFET (Metal Oxide) | 100V | 8.3A (Ta) | 4.5V, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | ±20V | - | 1.2W (Ta) | 16 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH TO263-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione12.936 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 3.5V @ 275µA | 200nC @ 10V | 14600pF @ 25V | ±20V | - | 300W (Tc) | 2.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab) |
||
YAGEO XSEMI |
MOSFET N-CH 600V 13.3A TO252
|
pacchetto: - |
Azione3.000 |
|
MOSFET (Metal Oxide) | 600 V | 13.3A (Tc) | 10V | 5V @ 250µA | 48 nC @ 10 V | 1632 pF @ 100 V | ±20V | - | 2W (Ta), 104W (Tc) | 290mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 500V 13A TO220-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 13A (Tc) | - | 4V @ 250µA | 56 nC @ 10 V | 2055 pF @ 25 V | ±30V | - | 48W (Tc) | 480mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Micro Commercial Co |
MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 16.5 nC @ 10 V | 873 pF @ 30 V | ±20V | - | 1.9W (Tj) | 19mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 58A (Tc) | 4.5V, 10V | 3V @ 250µA | 46 nC @ 10 V | 1230 pF @ 15 V | ±20V | - | 75W (Tc) | 11mOhm @ 26A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 1.8V, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | 190 pF @ 10 V | ±8V | - | 1.3W (Ta) | 75mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | 3-SMD, SOT-23-3 Variant |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 900V 5.1A TO220
|
pacchetto: - |
Azione861 |
|
MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28 nC @ 10 V | 710 pF @ 100 V | ±20V | - | 31W (Tc) | 1.2Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 4.3A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 15 nC @ 5 V | 830 pF @ 10 V | ±8V | - | 1.3W (Ta) | 50mOhm @ 4.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3-901 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET N-CH 20V 220MA 3XDFN
|
pacchetto: - |
Azione36.381 |
|
MOSFET (Metal Oxide) | 20 V | 220mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | - | 12.3 pF @ 15 V | ±8V | - | 125mW (Ta) | 1.5Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN (0.42x0.62) | 3-XFDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT323 T&R
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 391mA (Ta) | 1.8V, 5V | 1V @ 250µA | 0.8 nC @ 4.5 V | 41 pF @ 30 V | ±20V | - | 400mW (Ta) | 2Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
onsemi |
MOSFET N-CH 250V 4A TO220-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 4A (Ta) | 10V | 5V @ 250µA | 101 nC @ 10 V | 5690 pF @ 25 V | ±30V | - | 403W (Tc) | 47mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Central Semiconductor Corp |
MOSFET TRANSISTOR N-CH CHIP
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |