Pagina 1066 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.066/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPB80N06S4L05ATMA1
Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione5.888
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2.2V @ 60µA
110nC @ 10V
8180pF @ 25V
±16V
-
107W (Tc)
4.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS123L7874XT
Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.592
MOSFET (Metal Oxide)
100V
170mA (Ta)
4.5V, 10V
1.8V @ 50µA
2.67nC @ 10V
69pF @ 25V
±20V
-
360mW (Ta)
6 Ohm @ 170mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
hot IRF6617TR1
Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 15A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
pacchetto: DirectFET? Isometric ST
Azione20.748
MOSFET (Metal Oxide)
30V
14A (Ta), 55A (Tc)
4.5V, 10V
2.35V @ 250µA
17nC @ 4.5V
1300pF @ 15V
±20V
-
2.1W (Ta), 42W (Tc)
8.1 mOhm @ 15A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? ST
DirectFET? Isometric ST
hot IRLR3303TR
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione216.000
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
1V @ 250µA
26nC @ 4.5V
870pF @ 25V
±16V
-
68W (Tc)
31 mOhm @ 21A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI7392DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 9A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.75 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione1.000.080
MOSFET (Metal Oxide)
30V
9A (Ta)
4.5V, 10V
3V @ 250µA
15nC @ 4.5V
-
±20V
-
1.8W (Ta)
9.75 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
AOD456A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 50A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 12.5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.664
MOSFET (Metal Oxide)
25V
50A (Tc)
4.5V, 10V
3V @ 250µA
38nC @ 10V
2220pF @ 12.5V
±20V
-
3W (Ta), 50W (Tc)
6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQD5N50CTM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione388.104
MOSFET (Metal Oxide)
500V
4A (Tc)
10V
4V @ 250µA
24nC @ 10V
625pF @ 25V
±30V
-
2.5W (Ta), 48W (Tc)
1.4 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF6725MTRPBF
Infineon Technologies

MOSFET N-CH 30V 28A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
pacchetto: DirectFET? Isometric MX
Azione60.996
MOSFET (Metal Oxide)
30V
28A (Ta), 170A (Tc)
4.5V, 10V
2.35V @ 100µA
54nC @ 4.5V
4700pF @ 15V
±20V
-
2.8W (Ta), 100W (Tc)
2.2 mOhm @ 28A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
FMD15-06KC5
IXYS

MOSFET N-CH 600V 15A I4-PAC-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS i4-PAC?
  • Package / Case: i4-Pac?-5
pacchetto: i4-Pac?-5
Azione7.648
MOSFET (Metal Oxide)
600V
15A (Tc)
10V
3.5V @ 790µA
52nC @ 10V
2000pF @ 100V
±20V
-
-
165 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS i4-PAC?
i4-Pac?-5
IXTP340N04T4
IXYS

MOSFET N-CH 40V 340A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione3.152
MOSFET (Metal Oxide)
40V
340A (Tc)
10V
4V @ 250µA
256nC @ 10V
13000pF @ 25V
±15V
-
480W (Tc)
1.9 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot RW1C015UNT2R
Rohm Semiconductor

MOSFET N-CH 20V 1.5A WEMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WEMT
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione96.000
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.5V, 4.5V
1V @ 1mA
1.8nC @ 4.5V
110pF @ 10V
±10V
-
400mW (Ta)
180 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
6-WEMT
SOT-563, SOT-666
SI1078X-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 1.02A SOT563F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 240mW (Tc)
  • Rds On (Max) @ Id, Vgs: 142 mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: SOT-563, SOT-666
pacchetto: SOT-563, SOT-666
Azione3.616
MOSFET (Metal Oxide)
30V
1.02A (Tc)
2.5V, 10V
1.5V @ 250µA
3nC @ 4.5V
110pF @ 15V
±12V
-
240mW (Tc)
142 mOhm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
-
SOT-563, SOT-666
hot STP80NF70
STMicroelectronics

MOSFET N-CH 68V 98A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 68V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione90.156
MOSFET (Metal Oxide)
68V
98A (Tc)
10V
4V @ 250µA
75nC @ 10V
2550pF @ 25V
±20V
-
190W (Tc)
9.8 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot HUF75329D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione60.000
MOSFET (Metal Oxide)
55V
20A (Tc)
10V
4V @ 250µA
65nC @ 20V
1060pF @ 25V
±20V
-
128W (Tc)
26 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFPE30PBF
Vishay Siliconix

MOSFET N-CH 800V 4.1A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione9.492
MOSFET (Metal Oxide)
800V
4.1A (Tc)
10V
4V @ 250µA
78nC @ 10V
1300pF @ 25V
±20V
-
125W (Tc)
3 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRFR020TRPBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione42.000
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
TPN4R203NC,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 30V 23A 8TSON-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacchetto: 8-PowerVDFN
Azione47.772
MOSFET (Metal Oxide)
30V
23A (Ta)
4.5V, 10V
2.3V @ 200µA
24nC @ 10V
1370pF @ 15V
±20V
-
700mW (Ta), 22W (Tc)
4.2 mOhm @ 11.5A, 10V
150°C (TJ)
Surface Mount
8-TSON Advance (3.3x3.3)
8-PowerVDFN
IRFR9120TRPBF
Vishay Siliconix

MOSFET P-CH 100V 5.6A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione15.648
MOSFET (Metal Oxide)
100V
5.6A (Tc)
10V
4V @ 250µA
18nC @ 10V
390pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
600 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN040-100MSEX
Nexperia USA Inc.

MOSFET N-CH 100V 30A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 36.6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
pacchetto: SOT-1210, 8-LFPAK33 (5-Lead)
Azione125.754
MOSFET (Metal Oxide)
100V
30A (Tj)
10V
4V @ 1mA
30nC @ 10V
1470pF @ 50V
±20V
-
91W (Tc)
36.6 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
MCU09N20-TP
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
200 V
9A (Tc)
10V
3V @ 250µA
11.8 nC @ 10 V
509 pF @ 25 V
±30V
-
83W (Tc)
250mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SISS08DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 53.9/195.5A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3670 pF @ 12.5 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
pacchetto: -
Azione17.820
MOSFET (Metal Oxide)
25 V
53.9A (Ta), 195.5A (Tc)
4.5V, 10V
2.2V @ 250µA
82 nC @ 10 V
3670 pF @ 12.5 V
+20V, -16V
-
5W (Ta), 65.7W (Tc)
1.23mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
RFD16N03LSM9A
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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-
-
-
-
-
-
-
-
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2SK3325B-S19-AY
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
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-
-
-
-
-
-
-
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DMN62D2U-13
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
390mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
500mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
FDD8445-F085
onsemi

MOSFET N-CH 40V 70A TO252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
70A (Tc)
10V
4V @ 250µA
59 nC @ 10 V
4050 pF @ 25 V
±20V
-
79W (Tc)
8.7mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTQ88N28T
IXYS

MOSFET N-CH TO3P

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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-
-
-
-
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ISC130N20NM6ATMA1
Infineon Technologies

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
PSMN1R0-30YLD-1X
Nexperia USA Inc.

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
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