Pagina 1061 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  1.061/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IXFN66N50Q2
IXYS

MOSFET N-CH 500V 66A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 66A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione4.416
MOSFET (Metal Oxide)
500V
66A
10V
4.5V @ 8mA
199nC @ 10V
6800pF @ 25V
±30V
-
735W (Tc)
80 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
APT55M50JFLL
Microsemi Corporation

MOSFET N-CH 550V 77A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 77A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 38.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione6.000
MOSFET (Metal Oxide)
550V
77A
10V
5V @ 5mA
265nC @ 10V
12400pF @ 25V
±30V
-
694W (Tc)
50 mOhm @ 38.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
NTD65N03R-1G
ON Semiconductor

MOSFET N-CH 25V 9.5A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione6.864
MOSFET (Metal Oxide)
25V
9.5A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
16nC @ 5V
1400pF @ 20V
±20V
-
1.3W (Ta), 50W (Tc)
8.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PSMN005-25D,118
NXP

MOSFET N-CH 25V 75A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione5.024
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
60nC @ 5V
3500pF @ 20V
±15V
-
125W (Tc)
5.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9220TRR
Vishay Siliconix

MOSFET P-CH 200V 3.6A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.240
MOSFET (Metal Oxide)
200V
3.6A (Tc)
10V
4V @ 250µA
20nC @ 10V
340pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
1.5 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFIZ34G
Vishay Siliconix

MOSFET N-CH 60V 20A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacchetto: TO-220-3 Full Pack, Isolated Tab
Azione103.548
MOSFET (Metal Oxide)
60V
20A (Tc)
10V
4V @ 250µA
46nC @ 10V
1200pF @ 25V
±20V
-
42W (Tc)
50 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
hot IRFD9120
Vishay Siliconix

MOSFET P-CH 100V 1A 4-DIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
pacchetto: 4-DIP (0.300", 7.62mm)
Azione31.368
MOSFET (Metal Oxide)
100V
1A (Ta)
10V
4V @ 250µA
18nC @ 10V
390pF @ 25V
±20V
-
1.3W (Ta)
600 mOhm @ 600mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
BUK652R1-30C,127
NXP

MOSFET N-CH 30V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 168nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10918pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.504
MOSFET (Metal Oxide)
30V
120A (Tc)
4.5V, 10V
2.8V @ 1mA
168nC @ 10V
10918pF @ 25V
±16V
-
263W (Tc)
2.4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AUIRF2907ZS7PTL
Infineon Technologies

MOSFET N-CH 75V 180A D2PAK-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Azione6.368
MOSFET (Metal Oxide)
75V
180A (Tc)
10V
4V @ 250µA
260nC @ 10V
7580pF @ 25V
±20V
-
300W (Tc)
3.8 mOhm @ 110A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IPI100N04S4H2AKSA1
Infineon Technologies

MOSFET N-CH 40V 100A TO262-3-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione2.368
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
4V @ 70µA
90nC @ 10V
7180pF @ 25V
±20V
-
115W (Tc)
2.7 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRF3315STRLPBF
Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 82 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione58.560
MOSFET (Metal Oxide)
150V
21A (Tc)
10V
4V @ 250µA
95nC @ 10V
1300pF @ 25V
±20V
-
3.8W (Ta), 94W (Tc)
82 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFH11N80
IXYS

MOSFET N-CH 800V 11A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione2.704
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
4.5V @ 4mA
155nC @ 10V
4200pF @ 25V
±20V
-
300W (Tc)
950 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
hot AOT482L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 40V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione12.480
MOSFET (Metal Oxide)
80V
11A (Ta), 105A (Tc)
7V, 10V
3.7V @ 250µA
81nC @ 10V
4870pF @ 40V
±25V
-
2.1W (Ta), 333W (Tc)
7.2 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STD10LN80K5
STMicroelectronics

MOSFET N-CH 800V 8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.424
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
5V @ 100µA
15nC @ 10V
427pF @ 100V
±30V
-
110W (Tc)
630 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
TSM6N60CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1248pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione4.832
MOSFET (Metal Oxide)
600V
6A (Tc)
10V
4V @ 250µA
20.7nC @ 10V
1248pF @ 25V
±30V
-
89W (Tc)
1.25 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
IPA093N06N3GXKSA1
Infineon Technologies

MOSFET N-CH 60V 43A TO220-3-31

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione19.872
MOSFET (Metal Oxide)
60V
43A (Tc)
10V
4V @ 34µA
48nC @ 10V
3900pF @ 30V
±20V
-
33W (Tc)
9.3 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-31 Full Pack
TO-220-3 Full Pack
hot AO4406A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 13A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione1.036.056
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
2.5V @ 250µA
17nC @ 10V
910pF @ 15V
±20V
-
3.1W (Ta)
11.5 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot FDS86106
Fairchild/ON Semiconductor

MOSFET N-CH 100V 3.4A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 208pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione133.956
MOSFET (Metal Oxide)
100V
3.4A (Ta)
6V, 10V
4V @ 250µA
4nC @ 10V
208pF @ 50V
±20V
-
5W (Ta)
105 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SIS128LDN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 10.2A/33.7A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 33.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
pacchetto: -
Azione24.432
MOSFET (Metal Oxide)
80 V
10.2A (Ta), 33.7A (Tc)
4.5V, 10V
2.5V @ 250µA
30 nC @ 10 V
1250 pF @ 40 V
±20V
-
3.6W (Ta), 39W (Tc)
15.6mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
2SJ600-Z-E1-AZ
Renesas Electronics Corporation

TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
25A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
IPD60R450E6BTMA1
Infineon Technologies

MOSFET N-CH 600V 9.2A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
600 V
9.2A (Tc)
10V
3.5V @ 280µA
28 nC @ 10 V
620 pF @ 100 V
±20V
-
74W (Tc)
450mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPT013N08NM5LF
Infineon Technologies

SINGLE N-CHANNEL LINEAR FET 80V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 333A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
80 V
35A (Ta), 333A (Tc)
10V
4.1V @ 250µA
158 nC @ 10 V
820 pF @ 40 V
±20V
-
3.1W (Ta), 278W (Tc)
1.3mOhm @ 150A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
ISZ065N03L5SATMA1
Infineon Technologies

MOSFET N-CH 30V 12A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione109.578
MOSFET (Metal Oxide)
30 V
12A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
10 nC @ 10 V
670 pF @ 15 V
±20V
-
-
6.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
BSZ0804LSATMA1
Infineon Technologies

MOSFET N-CH 100V 11A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
11A (Ta), 40A (Tc)
4.5V, 10V
2.3V @ 36µA
15 nC @ 4.5 V
2100 pF @ 50 V
±20V
-
2.1W (Ta), 69W (Tc)
9.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
APT1003RSLLG
Microchip Technology

MOSFET N-CH 1000V 4A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 694 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
1000 V
4A (Tc)
-
5V @ 1mA
34 nC @ 10 V
694 pF @ 25 V
-
-
-
3Ohm @ 2A, 10V
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
XP3P3R0MT
YAGEO XSEMI

FET P-CH 30V 33.5A 125A PMPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 33.5A (Ta), 125A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15040 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PMPAK® 5 x 6
  • Package / Case: 8-PowerLDFN
pacchetto: -
Azione3.000
MOSFET (Metal Oxide)
30 V
33.5A (Ta), 125A (Tc)
4.5V, 10V
3V @ 250µA
122 nC @ 4.5 V
15040 pF @ 15 V
±20V
-
5W (Ta), 69.4W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PMPAK® 5 x 6
8-PowerLDFN
SUM90100E-GE3
Vishay Siliconix

N-CHANNEL 200-V (D-S) MOSFET D2P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacchetto: -
Azione1.401
MOSFET (Metal Oxide)
200 V
150A (Tc)
7.5V, 10V
4V @ 250µA
110 nC @ 10 V
3930 pF @ 100 V
±20V
-
375W (Tc)
11.4mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCTH70N120G2V-7
STMicroelectronics

SILICON CARBIDE POWER MOSFET 120

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 469W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
pacchetto: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
18V
4.9V @ 1mA
150 nC @ 18 V
3540 pF @ 800 V
+22V, -10V
-
469W (Tc)
30mOhm @ 50A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA