Pagina 106 - Transistor - FET, MOSFET - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559-836
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Transistor - FET, MOSFET - Singoli

Record 42.029
Pagina  106/1.502
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI070N06N G
Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA
Azione4.896
MOSFET (Metal Oxide)
60V
80A (Tc)
10V
4V @ 180µA
118nC @ 10V
4100pF @ 30V
±20V
-
250W (Tc)
7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
JAN2N6768T1
Microsemi Corporation

MOSFET N-CH TO-254AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-254AA
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
pacchetto: TO-254-3, TO-254AA (Straight Leads)
Azione4.992
MOSFET (Metal Oxide)
400V
14A (Tc)
10V
4V @ 250µA
110nC @ 10V
-
±20V
-
4W (Ta), 150W (Tc)
400 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-254AA
TO-254-3, TO-254AA (Straight Leads)
FDD5N50UTF_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.312
MOSFET (Metal Oxide)
500V
3A (Tc)
10V
5V @ 250µA
15nC @ 10V
650pF @ 25V
±30V
-
40W (Tc)
2 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTB30N20G
ON Semiconductor

MOSFET N-CH 200V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 81 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione206.976
MOSFET (Metal Oxide)
200V
30A (Ta)
10V
4V @ 250µA
100nC @ 10V
2335pF @ 25V
±30V
-
2W (Ta), 214W (Tc)
81 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTP13N10G
ON Semiconductor

MOSFET N-CH 100V 13A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 64.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione60.000
MOSFET (Metal Oxide)
100V
13A (Ta)
10V
4V @ 250µA
20nC @ 10V
550pF @ 25V
±20V
-
64.7W (Tc)
165 mOhm @ 6.5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFN150N10
IXYS

MOSFET N-CH 100V 150A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
pacchetto: SOT-227-4, miniBLOC
Azione7.600
MOSFET (Metal Oxide)
100V
150A
10V
4V @ 8mA
360nC @ 10V
9000pF @ 25V
±20V
-
520W (Tc)
12 mOhm @ 75A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
hot STB5NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 4.4A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione16.332
MOSFET (Metal Oxide)
500V
4.4A (Tc)
10V
4.5V @ 50µA
28nC @ 10V
535pF @ 25V
±30V
-
70W (Tc)
1.5 Ohm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI7880ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione38.388
MOSFET (Metal Oxide)
30V
40A (Tc)
4.5V, 10V
3V @ 250µA
125nC @ 10V
5600pF @ 15V
±20V
-
5.4W (Ta), 83W (Tc)
3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
NTMFS4935NBT3G
ON Semiconductor

MOSFET N-CH 30V 13A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacchetto: 8-PowerTDFN, 5 Leads
Azione3.328
MOSFET (Metal Oxide)
30V
13A (Ta), 93A (Tc)
4.5V, 10V
2V @ 250µA
49.4nC @ 10V
4850pF @ 15V
±20V
-
930mW (Ta), 48W (Tc)
3.2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
ZXMP4A16GQTC
Diodes Incorporated

MOSFET P-CH 40V SOT223

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
pacchetto: TO-261-4, TO-261AA
Azione6.640
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
NDD03N40Z-1G
ON Semiconductor

MOSFET N-CH 400V 2.1A IPAK-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA
Azione5.488
MOSFET (Metal Oxide)
400V
2.1A (Tc)
10V
4.5V @ 50µA
6.6nC @ 10V
140pF @ 50V
±30V
-
37W (Tc)
3.4 Ohm @ 600mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
TSM4NC50CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione6.176
MOSFET (Metal Oxide)
500V
4A (Tc)
10V
3V @ 250µA
12nC @ 10V
453pF @ 50V
±20V
-
83W (Tc)
2.7 Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
STP43N60DM2
STMicroelectronics

MOSFET N-CH 600V 34A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 93 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione5.984
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
5V @ 250µA
56nC @ 10V
2500pF @ 100V
±25V
-
250W (Tc)
93 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
SQJ860EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 60A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
pacchetto: PowerPAK? SO-8
Azione3.328
MOSFET (Metal Oxide)
40V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
55nC @ 10V
2700pF @ 25V
±20V
-
48W (Tc)
6 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
TK17N65W,S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A T0247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.416
MOSFET (Metal Oxide)
650V
17.3A (Ta)
10V
3.5V @ 900µA
45nC @ 10V
1800pF @ 300V
±30V
-
165W (Tc)
200 mOhm @ 8.7A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
SIHF30N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 29A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione14.526
MOSFET (Metal Oxide)
600V
29A (Tc)
10V
4V @ 250µA
130nC @ 10V
2600pF @ 100V
±30V
-
37W (Tc)
125 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
GSFD0982
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 50A, 100V,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2145 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Azione7.392
MOSFET (Metal Oxide)
100 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
39 nC @ 10 V
2145 pF @ 50 V
±20V
-
78W (Tc)
10.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
NP90N03VUG-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 30V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
90A (Tc)
-
4V @ 250µA
135 nC @ 10 V
7500 pF @ 25 V
-
-
1.2W (Ta), 105W (Tc)
3.2mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPC60R380E6UNSAWNX6SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AO4476AL
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
15A (Ta)
4.5V, 10V
2.5V @ 250µA
24 nC @ 10 V
1380 pF @ 15 V
±20V
-
3.1W (Ta)
7.7mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PSMN012-100YSFX
Nexperia USA Inc.

NEXTPOWER 80/100V MOSFETS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
pacchetto: -
Azione4.404
MOSFET (Metal Oxide)
100 V
65A (Ta)
7V, 10V
4V @ 1mA
46 nC @ 10 V
2800 pF @ 50 V
±20V
-
130W (Ta)
11.8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
SI2307BDS-T1-BE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione10.230
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4.5V, 10V
3V @ 250µA
15 nC @ 10 V
380 pF @ 15 V
±20V
-
750mW (Ta)
78mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
IPP530N15N3GXKSA1
Infineon Technologies

MOSFET N-CH 150V 21A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
150 V
21A (Tc)
8V, 10V
4V @ 35µA
12 nC @ 10 V
887 pF @ 75 V
±20V
-
68W (Tc)
53mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPTC026N12NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 222A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 169µA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 115A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-16-2
  • Package / Case: 16-PowerSOP Module
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
120 V
26A (Ta), 222A (Tc)
8V, 10V
3.6V @ 169µA
88 nC @ 10 V
6500 pF @ 60 V
±20V
-
3.8W (Ta), 278W (Tc)
2.6mOhm @ 115A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HDSOP-16-2
16-PowerSOP Module
ISC104N12LM6ATMA1
Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacchetto: -
Azione25.701
MOSFET (Metal Oxide)
120 V
11A (Ta), 63A (Tc)
3.3V, 10V
2.2V @ 35µA
26 nC @ 10 V
1800 pF @ 60 V
±20V
-
3W (Ta), 94W (Tc)
10.4mOhm @ 28A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
RM12N650T2
Rectron USA

MOSFET N-CH 650V 11.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 101W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
650 V
11.5A (Tc)
10V
4V @ 250µA
-
870 pF @ 50 V
±30V
-
101W (Tc)
360mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
DMPH4025SFVWQ-7
Diodes Incorporated

MOSFET P-CH 40V PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
8.7A (Ta), 40A (Tc)
4.5V, 10V
1.8V @ 250µA
38.6 nC @ 10 V
1918 pF @ 20 V
±20V
-
2.3W (Ta), 60W (Tc)
25mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
PCFG50T60RNW
onsemi

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-