Pagina 50 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559-827
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Transistor - FET, MOSFET - RF

Record 3.855
Pagina  50/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA092213FLV5XWSA1
Infineon Technologies

IC FET RF LDMOS H-34288-4/2

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 17.5dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85A
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione2.464
960MHz
17.5dB
30V
-
-
1.85A
200W
65V
2-Flatpack, Fin Leads, Flanged
H-34288-2
BLF7G24L-160P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
pacchetto: SOT539A
Azione2.368
2.3GHz ~ 2.4GHz
18.5dB
28V
-
-
1.2A
30W
65V
SOT539A
SOT539A
MRFE6S9130HSR5
NXP

FET RF 66V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 66V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione4.032
880MHz
19.2dB
28V
-
-
950mA
27W
66V
NI-780S
NI-780S
hot MRF6P23190HR6
NXP

FET RF 68V 2.39GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
pacchetto: NI-1230
Azione4.608
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
NI-1230
NI-1230
BF909AWR,115
NXP

MOSFET N-CH 7V 40MA SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 40mA
  • Noise Figure: 2dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 7V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: SC-82A, SOT-343
Azione3.536
800MHz
-
5V
40mA
2dB
15mA
-
7V
SC-82A, SOT-343
CMPAK-4
J310_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.736
450MHz
12dB
10V
60mA
3dB
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
SLD-2083CZ
RFMD

FET RF 35V 928MHZ RF083

  • Transistor Type: LDMOS
  • Frequency: 902MHz ~ 928MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 125mA
  • Power - Output: 12W
  • Voltage - Rated: 35V
  • Package / Case: SOT-538A
  • Supplier Device Package: RF083
pacchetto: SOT-538A
Azione3.392
902MHz ~ 928MHz
18dB
28V
-
-
125mA
12W
35V
SOT-538A
RF083
BF1211WR,115
NXP

MOSFET N-CH DUAL GATE 6V SOT343R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 400MHz
  • Gain: 29dB
  • Voltage - Test: 5V
  • Current Rating: 30mA
  • Noise Figure: 0.9dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 6V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: SC-82A, SOT-343
Azione5.360
400MHz
29dB
5V
30mA
0.9dB
15mA
-
6V
SC-82A, SOT-343
CMPAK-4
BSS83,215
NXP

MOSFET N-CH 10V 50MA SOT-143B

  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 50mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 10V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
pacchetto: TO-253-4, TO-253AA
Azione6.496
-
-
-
50mA
-
-
-
10V
TO-253-4, TO-253AA
SOT-143B
BG3130H6327XTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V 25MA SOT363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 24dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.3dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione3.136
800MHz
24dB
5V
25mA
1.3dB
14mA
-
8V
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BLF988,112
Ampleon USA Inc.

RF FET LDMOS 110V 20.8DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 20.8dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
pacchetto: SOT539A
Azione5.328
860MHz
20.8dB
50V
-
-
1.3A
250W
110V
SOT539A
SOT539A
ATF-531P8-TR2
Broadcom Limited

FET RF 7V 2GHZ 8-LPCC

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 20dB
  • Voltage - Test: 4V
  • Current Rating: 300mA
  • Noise Figure: 0.6dB
  • Current - Test: 135mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 7V
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-LPCC (2x2)
pacchetto: 8-WFDFN Exposed Pad
Azione7.760
2GHz
20dB
4V
300mA
0.6dB
135mA
24.5dBm
7V
8-WFDFN Exposed Pad
8-LPCC (2x2)
BLS7G2325L-105,112
Ampleon USA Inc.

RF MOSFET LDMOS 10V SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.5GHz
  • Gain: 18dB
  • Voltage - Test: 10V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 110W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
pacchetto: SOT-502A
Azione3.808
2.3GHz ~ 2.5GHz
18dB
10V
5µA
-
-
110W
65V
SOT-502A
SOT502A
MRF1K50HR5
NXP

HIGH POWER RF TRANSISTOR

  • Transistor Type: LDMOS
  • Frequency: 1.8MHz ~ 500MHz
  • Gain: 22.5dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 1500W
  • Voltage - Rated: 50V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
pacchetto: SOT-979A
Azione6.420
1.8MHz ~ 500MHz
22.5dB
-
-
-
-
1500W
50V
SOT-979A
NI-1230-4H
BLC10G18XS-301AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V DFM6

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 15.6dB
  • Voltage - Test: 30 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 300W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1275-1
  • Supplier Device Package: DFM6
pacchetto: -
Request a Quote
1.805GHz ~ 1.88GHz
15.6dB
30 V
1.4µA
-
300 mA
300W
65 V
SOT-1275-1
DFM6
2SK852-T1-A
Renesas Electronics Corporation

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC10G18XS-602AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 2.4 A
  • Power - Output: 720W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
pacchetto: -
Request a Quote
1.805GHz ~ 1.88GHz
16dB
30 V
2.8µA
-
2.4 A
720W
65 V
SOT-1258-4
SOT1258-4
BLC10G18XS-552AVTY
Ampleon USA Inc.

RF MOSFET LDMOS 30V SOT1258-4

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16.1dB
  • Voltage - Test: 30 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 1.9 A
  • Power - Output: 550W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-1258-4
  • Supplier Device Package: SOT1258-4
pacchetto: -
Request a Quote
1.805GHz ~ 1.88GHz
16.1dB
30 V
2.8µA
-
1.9 A
550W
65 V
SOT-1258-4
SOT1258-4
BLL9G1214LS-600U
Ampleon USA Inc.

RF MOSFET LDMOS 32V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 19dB
  • Voltage - Test: 32 V
  • Current Rating: 5µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 600W
  • Voltage - Rated: 65 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: -
Azione180
1.2GHz ~ 1.4GHz
19dB
32 V
5µA
-
400 mA
600W
65 V
SOT-502B
SOT502B
PTFB241402FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
CGHV60170D-GP4
MACOM Technology Solutions

RF MOSFET HEMT 50V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 260 mA
  • Power - Output: 170W
  • Voltage - Rated: 150 V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione150
6GHz
17dB
50 V
-
-
260 mA
170W
150 V
Die
Die
PTFC262808FV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.62GHz ~ 2.69GHz
  • Gain: 18dB
  • Voltage - Test: 28 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 10 mA
  • Power - Output: 280W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
pacchetto: -
Request a Quote
2.62GHz ~ 2.69GHz
18dB
28 V
1µA
-
10 mA
280W
65 V
H-37275G-6/2
H-37275G-6/2
0912GN-250V
Microchip Technology

RF MOSFET HEMT 50V

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 250W
  • Voltage - Rated: 65 V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: -
pacchetto: -
Request a Quote
960MHz ~ 1.215GHz
18.5dB
50 V
-
-
60 mA
250W
65 V
2-Flatpack, Fin Leads, Flanged
-
WP48007025
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 48V DIE

  • Transistor Type: GaN HEMT
  • Frequency: 8GHz
  • Gain: 12dB
  • Voltage - Test: 48 V
  • Current Rating: 800mA
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 30W
  • Voltage - Rated: 48 V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione105
8GHz
12dB
48 V
800mA
-
250 mA
30W
48 V
Die
Die
WP2806045UH
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V

  • Transistor Type: GaN HEMT
  • Frequency: 5GHz
  • Gain: 6.56dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 410 mA
  • Power - Output: 60W
  • Voltage - Rated: 160 V
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Azione36
5GHz
6.56dB
28 V
-
-
410 mA
60W
160 V
Module
-
2729GN-270V
Microchip Technology

RF MOSFET HEMT 50V 55-QP

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 2.9GHz
  • Gain: 15.6dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 290W
  • Voltage - Rated: 125 V
  • Package / Case: 55-QP
  • Supplier Device Package: 55-QP
pacchetto: -
Request a Quote
2.7GHz ~ 2.9GHz
15.6dB
50 V
-
-
60 mA
290W
125 V
55-QP
55-QP
BF2040E6814HTSA1
Infineon Technologies

RF MOSFET 5V SOT143

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 800MHz
  • Gain: 23dB
  • Voltage - Test: 5 V
  • Current Rating: 40mA
  • Noise Figure: 1.6dB
  • Current - Test: 15 mA
  • Power - Output: -
  • Voltage - Rated: 8 V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT-143-3D
pacchetto: -
Request a Quote
800MHz
23dB
5 V
40mA
1.6dB
15 mA
-
8 V
TO-253-4, TO-253AA
PG-SOT-143-3D
GTVA101K42EV-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-36275-4

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.4GHz
  • Gain: 17dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 83.6 mA
  • Power - Output: 1400W
  • Voltage - Rated: 125 V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
pacchetto: -
Azione378
960MHz ~ 1.4GHz
17dB
50 V
-
-
83.6 mA
1400W
125 V
H-36275-4
H-36275-4