Pagina 51 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Transistor - FET, MOSFET - RF

Record 3.855
Pagina  51/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA082201EV4R250XTMA1
Infineon Technologies

FET RF 65V 894MHZ H-36260-2

  • Transistor Type: LDMOS
  • Frequency: 894MHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.95A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
pacchetto: 2-Flatpack, Fin Leads
Azione2.192
894MHz
18dB
30V
10µA
-
1.95A
220W
65V
2-Flatpack, Fin Leads
H-36260-2
MMRF1311HR5
NXP

TRANS 470-860MHZ 600W 50V

  • Transistor Type: LDMOS
  • Frequency: 470MHz ~ 860MHz
  • Gain: 20dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 140W
  • Voltage - Rated: 50V
  • Package / Case: SOT-979A
  • Supplier Device Package: NI-1230-4H
pacchetto: SOT-979A
Azione2.176
470MHz ~ 860MHz
20dB
-
-
-
-
140W
50V
SOT-979A
NI-1230-4H
hot 3SK264-5-TG-E
ON Semiconductor

FET RF 15V 200MHZ CP4

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: 23dB
  • Voltage - Test: 6V
  • Current Rating: 30mA
  • Noise Figure: 2.2dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 15V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: 4-CP
pacchetto: SC-82A, SOT-343
Azione107.760
200MHz
23dB
6V
30mA
2.2dB
10mA
-
15V
SC-82A, SOT-343
4-CP
MAGX-001214-650L00
M/A-Com Technology Solutions

TRANSISTOR GAN 650W 1.2-1.4GHZ

  • Transistor Type: HEMT
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 19.5dB
  • Voltage - Test: 50V
  • Current Rating: 27A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 500W
  • Voltage - Rated: 65V
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.560
1.2GHz ~ 1.4GHz
19.5dB
50V
27A
-
500mA
500W
65V
-
-
BLF7G21L-160P,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 32.5A
  • Noise Figure: -
  • Current - Test: 1.08A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: LDMOST
pacchetto: SOT-1121A
Azione6.480
1.93GHz ~ 1.99GHz
18dB
28V
32.5A
-
1.08A
45W
65V
SOT-1121A
LDMOST
hot MRF8S7120NR3
NXP

FET RF 70V 768MHZ

  • Transistor Type: LDMOS
  • Frequency: 768MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 32W
  • Voltage - Rated: 70V
  • Package / Case: OM-780-2
  • Supplier Device Package: OM-780-2
pacchetto: OM-780-2
Azione3.712
768MHz
19.2dB
28V
-
-
600mA
32W
70V
OM-780-2
OM-780-2
MD7P19130HSR5
NXP

FET RF 2CH 65V 1.99GHZ NI780HS-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.99GHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.25A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S-4
  • Supplier Device Package: NI-780S-4
pacchetto: NI-780S-4
Azione5.904
1.99GHz
20dB
28V
-
-
1.25A
40W
65V
NI-780S-4
NI-780S-4
BF245A_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 6.5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 6.5mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.640
-
-
-
6.5mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE3511S02-A
CEL

HJ-FET NCH 13.5DB S02

  • Transistor Type: HFET
  • Frequency: 12GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: S02
pacchetto: 4-SMD, Flat Leads
Azione3.520
12GHz
13.5dB
2V
70mA
0.3dB
10mA
-
4V
4-SMD, Flat Leads
S02
ATF-50189-TR2
Broadcom Limited

FET RF 7V 2GHZ SOT-89

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 15.5dB
  • Voltage - Test: 4.5V
  • Current Rating: 1A
  • Noise Figure: 1.1dB
  • Current - Test: 280mA
  • Power - Output: 29dBm
  • Voltage - Rated: 7V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione5.792
2GHz
15.5dB
4.5V
1A
1.1dB
280mA
29dBm
7V
TO-243AA
SOT-89
MRF6P3300HR3
NXP

FET RF 68V 863MHZ NI-860C3

  • Transistor Type: LDMOS
  • Frequency: 857MHz ~ 863MHz
  • Gain: 20.2dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 270W
  • Voltage - Rated: 68V
  • Package / Case: NI-860C3
  • Supplier Device Package: NI-860C3
pacchetto: NI-860C3
Azione3.344
857MHz ~ 863MHz
20.2dB
32V
-
-
1.6A
270W
68V
NI-860C3
NI-860C3
MRF5S21090HSR3
NXP

FET RF 65V 2.11GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione4.800
2.11GHz
14.5dB
28V
-
-
850mA
19W
65V
NI-780S
NI-780S
hot MRF5S21090HR3
NXP

FET RF 65V 2.11GHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione9.624
2.11GHz
14.5dB
28V
-
-
850mA
19W
65V
NI-780
NI-780
2N5245
Fairchild/ON Semiconductor

JFET N-CH 30V 15MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione2.208
-
-
-
15mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BLA8G1011L-300GU
Ampleon USA Inc.

RF FET LDMOS 65V 16DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.06GHz
  • Gain: 16.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 300W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502F
pacchetto: SOT-502A
Azione5.136
1.06GHz
16.5dB
32V
-
-
150mA
300W
65V
SOT-502A
SOT502F
BLF2425M6LS180P:11
Ampleon USA Inc.

RF FET LDMOS 65V 13.3DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.45GHz
  • Gain: 13.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 10mA
  • Power - Output: 180W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacchetto: SOT539B
Azione7.616
2.45GHz
13.3dB
28V
-
-
10mA
180W
65V
SOT539B
SOT539B
BLF7G27L-135,112
Ampleon USA Inc.

TRANSISTOR RF PWR LDMOS SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 16.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 25W
  • Voltage - Rated: -
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
pacchetto: SOT-502A
Azione2.704
2.6GHz ~ 2.7GHz
16.5dB
28V
-
-
1.3A
25W
-
SOT-502A
LDMOST
BLF2425M9L30J
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT1135A

  • Transistor Type: LDMOS
  • Frequency: 2.45GHz
  • Gain: 18.5dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1135A
  • Supplier Device Package: SOT1135A
pacchetto: SOT-1135A
Azione6.032
2.45GHz
18.5dB
32V
-
-
20mA
30W
65V
SOT-1135A
SOT1135A
BLF7G24LS-100,118
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione7.360
2.3GHz ~ 2.4GHz
18dB
28V
28A
-
900mA
20W
65V
SOT-502B
SOT502B
MMRF1317HSR5
NXP

TRANS 1030MHZ 1550W PEAK 50V

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.03GHz
  • Gain: 18.2dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1300W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S
  • Supplier Device Package: NI-1230-4S
pacchetto: NI-1230-4S
Azione4.848
1.03GHz
18.2dB
50V
-
-
100mA
1300W
105V
NI-1230-4S
NI-1230-4S
ARF466BG
Microsemi Corporation

RF FET N CH 1000V 13A TO264

  • Transistor Type: N-Channel
  • Frequency: 40.68MHz
  • Gain: 16dB
  • Voltage - Test: 150V
  • Current Rating: 13A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 150W
  • Voltage - Rated: 1000V
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
pacchetto: TO-264-3, TO-264AA
Azione5.744
40.68MHz
16dB
150V
13A
-
-
150W
1000V
TO-264-3, TO-264AA
TO-264
CGH60120D
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 120W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: Die
Azione6.864
6GHz
13dB
28V
-
-
1A
120W
84V
Die
Die
GTRA362802FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 13.5dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 280W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
pacchetto: -
Request a Quote
3.4GHz ~ 3.6GHz
13.5dB
48 V
-
-
200 mA
280W
125 V
H-37248C-4
H-37248C-4
NE5520379A-T1A-A
CEL

FET RF 15V 915MHZ 79A-PKG

  • Transistor Type: LDMOS
  • Frequency: 915MHz
  • Gain: 16dB
  • Voltage - Test: 3.2 V
  • Current Rating: 1.5A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 35.5dBm
  • Voltage - Rated: 15 V
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 79A
pacchetto: -
Request a Quote
915MHz
16dB
3.2 V
1.5A
-
-
35.5dBm
15 V
4-SMD, Flat Leads
79A
PXAC200902FC-V1-R0
MACOM Technology Solutions

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
BLC9H10XS-350AY
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT1273-1

  • Transistor Type: LDMOS
  • Frequency: 617MHz ~ 960MHz
  • Gain: 19.5dB
  • Voltage - Test: 50 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 350W
  • Voltage - Rated: 105 V
  • Package / Case: SOT1273-1
  • Supplier Device Package: SOT1273-1
pacchetto: -
Request a Quote
617MHz ~ 960MHz
19.5dB
50 V
1.4µA
-
400 mA
350W
105 V
SOT1273-1
SOT1273-1
PTAC210802FC-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 85 mA
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
pacchetto: -
Request a Quote
2.17GHz
17dB
28 V
10µA
-
85 mA
80W
65 V
H-37248-4
H-37248-4
GTRA362002FC-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 48V H-37248C-4

  • Transistor Type: HEMT
  • Frequency: 3.4GHz ~ 3.6GHz
  • Gain: 13.5dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 140 mA
  • Power - Output: 200W
  • Voltage - Rated: 125 V
  • Package / Case: H-37248C-4
  • Supplier Device Package: H-37248C-4
pacchetto: -
Azione150
3.4GHz ~ 3.6GHz
13.5dB
48 V
-
-
140 mA
200W
125 V
H-37248C-4
H-37248C-4