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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  121/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA071701FV4R250XTMA1
Infineon Technologies

FET RF LDMOS 170W H37248-2

  • Transistor Type: LDMOS
  • Frequency: 765MHz
  • Gain: 18.7dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione2.160
765MHz
18.7dB
30V
-
-
900mA
150W
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
PTFA082201F V1
Infineon Technologies

IC FET RF LDMOS 220W H-37260-2

  • Transistor Type: LDMOS
  • Frequency: 894MHz
  • Gain: 18dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.95A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37260-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione6.464
894MHz
18dB
30V
10µA
-
1.95A
220W
65V
2-Flatpack, Fin Leads, Flanged
H-37260-2
ON5173,118
NXP

MOSFET RF SOT404 D2PAK

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione4.864
-
-
-
-
-
-
-
-
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot MRF5P21045NR1
NXP

FET RF 2CH 65V 2.17GHZ TO-270-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
pacchetto: TO-270AB
Azione16.956
2.11GHz ~ 2.17GHz
14.5dB
28V
-
-
500mA
10W
65V
TO-270AB
TO-270 WB-4
MRF5S9100MR1
NXP

FET RF 68V 880MHZ TO-270-4

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 20W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AB
  • Supplier Device Package: TO-270 WB-4
pacchetto: TO-270AB
Azione5.920
880MHz
19.5dB
26V
-
-
950mA
20W
68V
TO-270AB
TO-270 WB-4
J310_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 60MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 450MHz
  • Gain: 12dB
  • Voltage - Test: 10V
  • Current Rating: 60mA
  • Noise Figure: 3dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione5.008
450MHz
12dB
10V
60mA
3dB
10mA
-
25V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLF3G21-30,112
Ampleon USA Inc.

RF FET LDMOS 65V 13.5DB SOT467C

  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 13.5dB
  • Voltage - Test: 26V
  • Current Rating: 4.5A
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
pacchetto: SOT467C
Azione4.496
2GHz
13.5dB
26V
4.5A
-
450mA
30W
65V
SOT467C
SOT467C
BF998R,215
NXP

MOSFET N-CH 12V 30MA SOT143R

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 30mA
  • Noise Figure: 0.6dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione3.568
200MHz
-
8V
30mA
0.6dB
10mA
-
12V
SOT-143R
SOT-143R
PTVA042502FCV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-37248-4

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
pacchetto: H-37248-4
Azione3.120
-
-
-
-
-
-
-
-
H-37248-4
H-37248-4
BLU6H0410LS-600P,1
Ampleon USA Inc.

RF FET LDMOS 110V 21DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 250W
  • Voltage - Rated: 110V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
pacchetto: SOT539B
Azione3.536
860MHz
21dB
50V
-
-
1.3A
250W
110V
SOT539B
SOT539B
BLF7G20LS-200,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.62A
  • Power - Output: 55W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione5.424
1.81GHz ~ 1.88GHz
18dB
28V
-
-
1.62A
55W
65V
SOT-502B
SOT502B
BLF2425M7LS100J
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: SOT-502B
Azione4.752
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502B
SOT502B
STAC4932F
STMicroelectronics

TRANS RF PWR N-CH STAC244F

  • Transistor Type: N-Channel
  • Frequency: 123MHz
  • Gain: 26dB
  • Voltage - Test: 100V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 1200W
  • Voltage - Rated: 200V
  • Package / Case: STAC244F
  • Supplier Device Package: STAC244F
pacchetto: STAC244F
Azione7.824
123MHz
26dB
100V
-
-
250mA
1200W
200V
STAC244F
STAC244F
hot ATF-531P8-TR1
Broadcom Limited

FET RF 7V 2GHZ 8-LPCC

  • Transistor Type: E-pHEMT
  • Frequency: 2GHz
  • Gain: 20dB
  • Voltage - Test: 4V
  • Current Rating: 300mA
  • Noise Figure: 0.6dB
  • Current - Test: 135mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 7V
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-LPCC (2x2)
pacchetto: 8-WFDFN Exposed Pad
Azione192.624
2GHz
20dB
4V
300mA
0.6dB
135mA
24.5dBm
7V
8-WFDFN Exposed Pad
8-LPCC (2x2)
hot 2SK3557-6-TB-E
ON Semiconductor

JFET N-CH 15V 50MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: 5V
  • Current Rating: 50mA
  • Noise Figure: 1dB
  • Current - Test: 1mA
  • Power - Output: 200mW
  • Voltage - Rated: 15V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione144.000
1kHz
-
5V
50mA
1dB
1mA
200mW
15V
TO-236-3, SC-59, SOT-23-3
3-CP
STAC2933
STMicroelectronics

MOSF RF N CH 130V 40A STAC177B

  • Transistor Type: N-Channel
  • Frequency: 30MHz
  • Gain: 23.5dB
  • Voltage - Test: 50V
  • Current Rating: 40A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 400W
  • Voltage - Rated: 130V
  • Package / Case: STAC177B
  • Supplier Device Package: STAC177B
pacchetto: STAC177B
Azione6.960
30MHz
23.5dB
50V
40A
-
250mA
400W
130V
STAC177B
STAC177B
CGHV22200F
Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • Gain: 18dB
  • Voltage - Test: 50V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 200W
  • Voltage - Rated: 125V
  • Package / Case: 440162
  • Supplier Device Package: 440162
pacchetto: 440162
Azione4.480
1.8GHz ~ 2.2GHz
18dB
50V
12A
-
1A
200W
125V
440162
440162
BLF578,112
Ampleon USA Inc.

RF FET LDMOS 110V 24DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 225MHz
  • Gain: 24dB
  • Voltage - Test: 50V
  • Current Rating: 88A
  • Noise Figure: -
  • Current - Test: 40mA
  • Power - Output: 1200W
  • Voltage - Rated: 110V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
pacchetto: SOT539A
Azione7.200
225MHz
24dB
50V
88A
-
40mA
1200W
110V
SOT539A
SOT539A
STAC9200
STMicroelectronics

RF MOSFET LDMOS 32V STAC244B

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 230W
  • Voltage - Rated: 80 V
  • Package / Case: STAC244B
  • Supplier Device Package: STAC244B
pacchetto: -
Request a Quote
1.3GHz
18dB
-
1µA
-
-
230W
80 V
STAC244B
STAC244B
CLF3H0060S-10U
Ampleon USA Inc.

RF MOSFET GAN HEMT 50V SOT1227B

  • Transistor Type: GaN HEMT
  • Frequency: 6GHz
  • Gain: 20.1dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 40 mA
  • Power - Output: 10W
  • Voltage - Rated: 150 V
  • Package / Case: SOT-1227B
  • Supplier Device Package: SOT1227B
pacchetto: -
Azione171
6GHz
20.1dB
50 V
-
-
40 mA
10W
150 V
SOT-1227B
SOT1227B
BCP030C
BeRex Inc

RF MOSFET PHEMT FET 8V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 6GHz ~ 18GHz
  • Gain: 13.5dB
  • Voltage - Test: 8 V
  • Current Rating: 120mA
  • Noise Figure: 1.1dB
  • Current - Test: 45 mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 12 V
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
6GHz ~ 18GHz
13.5dB
8 V
120mA
1.1dB
45 mA
24.5dBm
12 V
Die
Die
BLF0910H9LS600J
Ampleon USA Inc.

RF MOSFET LDMOS 50V SOT502B

  • Transistor Type: LDMOS
  • Frequency: 900MHz ~ 930MHz
  • Gain: 18.6dB
  • Voltage - Test: 50 V
  • Current Rating: 2.8µA
  • Noise Figure: -
  • Current - Test: 90 mA
  • Power - Output: 600W
  • Voltage - Rated: 108 V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
pacchetto: -
Request a Quote
900MHz ~ 930MHz
18.6dB
50 V
2.8µA
-
90 mA
600W
108 V
SOT-502B
SOT502B
MWT-PH9F
CML Microcircuits

RF MOSFET MESFET 4V CHIP

  • Transistor Type: MESFET
  • Frequency: 26GHz
  • Gain: -
  • Voltage - Test: 4 V
  • Current Rating: 220mA
  • Noise Figure: -
  • Current - Test: 220 mA
  • Power - Output: 27dBm
  • Voltage - Rated: 7 V
  • Package / Case: Die
  • Supplier Device Package: Chip
pacchetto: -
Request a Quote
26GHz
-
4 V
220mA
-
220 mA
27dBm
7 V
Die
Chip
ART2K0PEGY
Ampleon USA Inc.

RF MOSFET LDMOS 65V OMP1230

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1MHz ~ 450MHz
  • Gain: 26.9dB
  • Voltage - Test: 65 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 2000W
  • Voltage - Rated: 200 V
  • Package / Case: OMP-1230-4G-1
  • Supplier Device Package: OMP-1230-4G-1
pacchetto: -
Azione300
1MHz ~ 450MHz
26.9dB
65 V
1.4µA
-
150 mA
2000W
200 V
OMP-1230-4G-1
OMP-1230-4G-1
MWE6IC9100NBR1-FR
Freescale Semiconductor

RF MOSFET LDMOS 26V TO272-14

  • Transistor Type: LDMOS
  • Frequency: 869MHz ~ 960MHz
  • Gain: 33.5dB
  • Voltage - Test: 26 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 120 mA
  • Power - Output: 100W
  • Voltage - Rated: 66 V
  • Package / Case: TO-272-14 Variant, Flat Leads
  • Supplier Device Package: TO-272 WB-14
pacchetto: -
Request a Quote
869MHz ~ 960MHz
33.5dB
26 V
10µA
-
120 mA
100W
66 V
TO-272-14 Variant, Flat Leads
TO-272 WB-14
A3G18D510-04SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 1.805GHz ~ 2.2GHz
  • Gain: 16dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250 mA
  • Power - Output: 56W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
pacchetto: -
Request a Quote
1.805GHz ~ 2.2GHz
16dB
48 V
-
-
250 mA
56W
125 V
NI-780S-4L
NI-780S-4L
A5G26S008NT6
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 2.496GHz ~ 2.69GHz
  • Gain: 18.4dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 17 mA
  • Power - Output: 27dBm
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (4x4.5)
pacchetto: -
Request a Quote
2.496GHz ~ 2.69GHz
18.4dB
48 V
-
-
17 mA
27dBm
125 V
6-LDFN Exposed Pad
6-PDFN (4x4.5)
BLF278C
Rochester Electronics, LLC

RF MOSFET 50V CDFM4

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: -
  • Gain: 18dB
  • Voltage - Test: 50 V
  • Current Rating: 2.5mA
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 300W
  • Voltage - Rated: 125 V
  • Package / Case: SOT-262A1
  • Supplier Device Package: CDFM4
pacchetto: -
Request a Quote
-
18dB
50 V
2.5mA
-
200 mA
300W
125 V
SOT-262A1
CDFM4