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Transistor - FET, MOSFET - RF

Record 3.855
Pagina  119/138
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA070601FV4XWSA1
Infineon Technologies

FET RF LDMOS 60W H37265-2

  • Transistor Type: LDMOS
  • Frequency: 760MHz
  • Gain: 19.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 600mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37265-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione5.552
760MHz
19.5dB
28V
-
-
600mA
60W
65V
2-Flatpack, Fin Leads, Flanged
H-37265-2
PTFA191001F V4
Infineon Technologies

IC FET RF LDMOS 100W H-37248-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 44dBm
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-37248-2
pacchetto: 2-Flatpack, Fin Leads, Flanged
Azione4.048
1.96GHz
17dB
30V
10µA
-
900mA
44dBm
65V
2-Flatpack, Fin Leads, Flanged
H-37248-2
MRF8S9220HR5
NXP

FET RF 70V 960MHZ NI780H

  • Transistor Type: LDMOS
  • Frequency: 960MHz
  • Gain: 19.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.6A
  • Power - Output: 65W
  • Voltage - Rated: 70V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione4.144
960MHz
19.4dB
28V
-
-
1.6A
65W
70V
NI-780
NI-780
MRF8S19140HR3
NXP

FET RF 65V 1.96GHZ NI780H

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 19.1dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 34W
  • Voltage - Rated: 65V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione7.952
1.96GHz
19.1dB
28V
-
-
1.1A
34W
65V
NI-780
NI-780
MRF9030NR1
NXP

FET RF 65V 945MHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 945MHz
  • Gain: 20dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
pacchetto: TO-270AA
Azione7.664
945MHz
20dB
26V
-
-
250mA
30W
65V
TO-270AA
TO-270-2
MPF102G
ON Semiconductor

JFET N-CH 25V 20MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 20mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione3.232
-
-
-
20mA
-
-
-
25V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MRFG35010MT1
NXP

FET RF 15V 3.55GHZ 1.5-PLD

  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 12V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 9W
  • Voltage - Rated: 15V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5
pacchetto: PLD-1.5
Azione5.184
3.55GHz
10dB
12V
-
-
180mA
9W
15V
PLD-1.5
PLD-1.5
BLF245B,112
Ampleon USA Inc.

RF FET 2 NC 65V 18DB SOT279A

  • Transistor Type: 2 N-Channel (Dual) Common Source
  • Frequency: 175MHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: 4.5A
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 30W
  • Voltage - Rated: 65V
  • Package / Case: SOT-279A
  • Supplier Device Package: CDFM4
pacchetto: SOT-279A
Azione7.472
175MHz
18dB
28V
4.5A
-
25mA
30W
65V
SOT-279A
CDFM4
PTFA220041MV4R1KXUMA1
Infineon Technologies

RF MOSFET TRANSISTORS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione5.056
-
-
-
-
-
-
-
-
-
-
MMRF1006HSR5
NXP

FET RF 2CH 120V 450MHZ NI-1230S

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 1000W
  • Voltage - Rated: 120V
  • Package / Case: NI-1230S-4
  • Supplier Device Package: NI-1230S-4
pacchetto: NI-1230S-4
Azione7.152
450MHz
20dB
50V
-
-
150mA
1000W
120V
NI-1230S-4
NI-1230S-4
MRF6V12500HR5
NXP

FET RF 110V 1.03GHZ NI-780H

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz
  • Gain: 19.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 500W
  • Voltage - Rated: 110V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
pacchetto: NI-780
Azione4.608
1.03GHz
19.7dB
50V
-
-
200mA
500W
110V
NI-780
NI-780
BLF898SU
Ampleon USA Inc.

BLF898S/SOT539/TRAY

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione3.568
-
-
-
-
-
-
-
-
-
-
BLF2425M7L100U
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 20W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: SOT502A
pacchetto: SOT-502A
Azione6.192
2.3GHz ~ 2.4GHz
18dB
28V
-
-
900mA
20W
65V
SOT-502A
SOT502A
BLF8G27LS-150VU
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
pacchetto: SOT-1244B
Azione6.896
2.6GHz ~ 2.7GHz
18dB
28V
-
-
1.3A
45W
65V
SOT-1244B
CDFM6
MRF6VP3091NBR1
NXP

FET RF 2CH 115V 860MHZ TO272-4

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 350mA
  • Power - Output: 18W
  • Voltage - Rated: 115V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
pacchetto: TO-272BB
Azione4.080
860MHz
22dB
50V
-
-
350mA
18W
115V
TO-272BB
TO-272 WB-4
MRF7S21080HSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 22W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
pacchetto: NI-780S
Azione7.408
2.17GHz
18dB
28V
-
-
800mA
22W
65V
NI-780S
NI-780S
PD55015S-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 14dB
  • Voltage - Test: 12.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
pacchetto: PowerSO-10 Exposed Bottom Pad
Azione4.016
500MHz
14dB
12.5V
5A
-
150mA
15W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
hot PD55008TR-E
STMicroelectronics

TRANSISTOR RF POWERSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
pacchetto: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Azione17.004
500MHz
17dB
12.5V
4A
-
150mA
8W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
275-201N25A-00
IXYS

RF MOSFET N-CHANNEL DE275

  • Transistor Type: N-Channel
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 1mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 590W
  • Voltage - Rated: 200V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE275
pacchetto: 6-SMD, Flat Lead Exposed Pad
Azione5.760
100MHz
-
-
1mA
-
-
590W
200V
6-SMD, Flat Lead Exposed Pad
DE275
3SK293(TE85L,F)
Toshiba Semiconductor and Storage

FET RF 12.5V 800MHZ USQ

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 22dB
  • Voltage - Test: 6V
  • Current Rating: 30mA
  • Noise Figure: 2.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12.5V
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: USQ
pacchetto: SC-82A, SOT-343
Azione173.580
800MHz
22dB
6V
30mA
2.5dB
10mA
-
12.5V
SC-82A, SOT-343
USQ
MMRF5017HSR5
NXP

RF MOSFET HEMT 50V NI400

  • Transistor Type: HEMT
  • Frequency: 30MHz ~ 2.2GHz
  • Gain: 18.4dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 200 mA
  • Power - Output: 125W
  • Voltage - Rated: 150 V
  • Package / Case: NI-400S-2S
  • Supplier Device Package: NI-400S-2S
pacchetto: -
Azione3
30MHz ~ 2.2GHz
18.4dB
50 V
-
-
200 mA
125W
150 V
NI-400S-2S
NI-400S-2S
A5G35H110N-3400
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 3.3GHz ~ 3.7GHz
  • Gain: 15.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 70 mA
  • Power - Output: 15.1W
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (7x6.5)
pacchetto: -
Request a Quote
3.3GHz ~ 3.7GHz
15.3dB
48 V
-
-
70 mA
15.1W
125 V
6-LDFN Exposed Pad
6-PDFN (7x6.5)
1214GN-50E
Microchip Technology

RF MOSFET GAN 50V 55-QQ

  • Transistor Type: GaN
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 15.9dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 20 mA
  • Power - Output: 58W
  • Voltage - Rated: 150 V
  • Package / Case: 55-QQ
  • Supplier Device Package: 55-QQ
pacchetto: -
Request a Quote
1.2GHz ~ 1.4GHz
15.9dB
50 V
-
-
20 mA
58W
150 V
55-QQ
55-QQ
A2T21S260W12NR3
NXP

RF MOSFET LDMOS 28V OM880X-2L2L

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.2GHz
  • Gain: 17.9dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.6 A
  • Power - Output: 218W
  • Voltage - Rated: 65 V
  • Package / Case: OM-880X-2L2L
  • Supplier Device Package: OM-880X-2L2L
pacchetto: -
Request a Quote
2.11GHz ~ 2.2GHz
17.9dB
28 V
10µA
-
1.6 A
218W
65 V
OM-880X-2L2L
OM-880X-2L2L
WP2806015UH
WAVEPIA.,Co.Ltd

RF MOSFET GAN HEMT 28V 360BH

  • Transistor Type: GaN HEMT
  • Frequency: 6GHz
  • Gain: 11.6dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 8W
  • Voltage - Rated: 160 V
  • Package / Case: 360BH
  • Supplier Device Package: 360BH
pacchetto: -
Azione30
6GHz
11.6dB
28 V
-
-
150 mA
8W
160 V
360BH
360BH
GTRB384608FC-V1-R2
MACOM Technology Solutions

RF MOSFET HEMT H-37248KC-6

  • Transistor Type: HEMT
  • Frequency: 3.3GHz ~ 3.8GHz
  • Gain: 12.3dB
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 440W
  • Voltage - Rated: 48 V
  • Package / Case: H-37248KC-6/2
  • Supplier Device Package: H-37248KC-6/2
pacchetto: -
Request a Quote
3.3GHz ~ 3.8GHz
12.3dB
-
-
-
-
440W
48 V
H-37248KC-6/2
H-37248KC-6/2
MRF24G300HSR5
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.4GHz ~ 2.5GHz
  • Gain: 15.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 300W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780S-4L
  • Supplier Device Package: NI-780S-4L
pacchetto: -
Azione276
2.4GHz ~ 2.5GHz
15.3dB
48 V
-
-
-
300W
125 V
NI-780S-4L
NI-780S-4L
A5G35S004NT6
NXP

RF MOSFET GAN 48V 6DFN

  • Transistor Type: GaN
  • Frequency: 3.3GHz ~ 4.3GHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 12 mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (4x4.5)
pacchetto: -
Request a Quote
3.3GHz ~ 4.3GHz
16.9dB
48 V
-
-
12 mA
24.5dBm
125 V
6-LDFN Exposed Pad
6-PDFN (4x4.5)