Pagina 118 - Transistor - FET, MOSFET - RF | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Frequency	Gain	Voltage - Test	Current Rating	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
PTFA212401F V4 R250	Infineon Technologies	IC FET RF LDMOS 240W H-37260-2 Transistor Type: LDMOS Frequency: 2.14GHz Gain: 15.8dB Voltage - Test: 30V Current Rating: 10µA Noise Figure: - Current - Test: 1.6A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2	pacchetto: 2-Flatpack, Fin Leads, Flanged	Azione6.080	2.14GHz	15.8dB	30V	10µA	-	1.6A	50W	65V	2-Flatpack, Fin Leads, Flanged	H-37260-2
BF2030E6814HTSA1	Infineon Technologies	MOSFET N-CH 8V 40MA SOT-143 Transistor Type: N-Channel Frequency: 800MHz Gain: 23dB Voltage - Test: 5V Current Rating: 40mA Noise Figure: 1.5dB Current - Test: 10mA Power - Output: - Voltage - Rated: 8V Package / Case: TO-253-4, TO-253AA Supplier Device Package: PG-SOT143-4	pacchetto: TO-253-4, TO-253AA	Azione35.868	800MHz	23dB	5V	40mA	1.5dB	10mA	-	8V	TO-253-4, TO-253AA	PG-SOT143-4
BLF6G20S-45,118	Ampleon USA Inc.	RF FET LDMOS 65V 19.2DB SOT608B Transistor Type: LDMOS Frequency: 1.8GHz ~ 1.88GHz Gain: 19.2dB Voltage - Test: 28V Current Rating: 13A Noise Figure: - Current - Test: 360mA Power - Output: 2.5W Voltage - Rated: 65V Package / Case: SOT-608B Supplier Device Package: CDFM2	pacchetto: SOT-608B	Azione4.064	1.8GHz ~ 1.88GHz	19.2dB	28V	13A	-	360mA	2.5W	65V	SOT-608B	CDFM2
ON5275,135	NXP	MOSFET RF SOT223 SC-73 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	pacchetto: TO-261-4, TO-261AA	Azione2.992	-	-	-	-	-	-	-	-	TO-261-4, TO-261AA	SOT-223
MRF18085ALSR5	NXP	FET RF 65V 1.88GHZ NI-780S Transistor Type: LDMOS Frequency: 1.81GHz ~ 1.88GHz Gain: 15dB Voltage - Test: 26V Current Rating: - Noise Figure: - Current - Test: 800mA Power - Output: 85W Voltage - Rated: 65V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione3.264	1.81GHz ~ 1.88GHz	15dB	26V	-	-	800mA	85W	65V	NI-780S	NI-780S
MRFG35002N6T1	NXP	FET RF 8V 3.55GHZ PLD-1.5 Transistor Type: pHEMT FET Frequency: 3.55GHz Gain: 10dB Voltage - Test: 6V Current Rating: - Noise Figure: - Current - Test: 65mA Power - Output: 1.5W Voltage - Rated: 8V Package / Case: PLD-1.5 Supplier Device Package: PLD-1.5	pacchetto: PLD-1.5	Azione6.016	3.55GHz	10dB	6V	-	-	65mA	1.5W	8V	PLD-1.5	PLD-1.5
MRF377HR3	NXP	FET RF 65V 860MHZ NI-860C Transistor Type: LDMOS Frequency: 860MHz Gain: 18.2dB Voltage - Test: 32V Current Rating: 17A Noise Figure: - Current - Test: 2A Power - Output: 45W Voltage - Rated: 65V Package / Case: NI-860C3 Supplier Device Package: NI-860C3	pacchetto: NI-860C3	Azione3.968	860MHz	18.2dB	32V	17A	-	2A	45W	65V	NI-860C3	NI-860C3
J211	Fairchild/ON Semiconductor	JFET N-CH 25V 20MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 20mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 25V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	pacchetto: TO-226-3, TO-92-3 (TO-226AA)	Azione3.664	-	-	-	20mA	-	-	-	25V	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF909WR,115	NXP	MOSFET N-CH 7V 40MA SOT343 Transistor Type: N-Channel Dual Gate Frequency: 800MHz Gain: - Voltage - Test: 5V Current Rating: 40mA Noise Figure: 2dB Current - Test: 15mA Power - Output: - Voltage - Rated: 7V Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	pacchetto: SC-82A, SOT-343	Azione4.768	800MHz	-	5V	40mA	2dB	15mA	-	7V	SC-82A, SOT-343	CMPAK-4
PTFB072707FHV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.344	-	-	-	-	-	-	-	-	-	-
MMRF1013HR5	NXP	FET RF 2CH 65V 2.9GHZ Transistor Type: LDMOS (Dual) Frequency: 2.9GHz Gain: 13.3dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 320W Voltage - Rated: 65V Package / Case: SOT-979A Supplier Device Package: NI-1230-4H	pacchetto: SOT-979A	Azione3.488	2.9GHz	13.3dB	30V	-	-	100mA	320W	65V	SOT-979A	NI-1230-4H
AFT21H350W04GSR6	NXP	FET RF 2CH 65V 2.11GHZ Transistor Type: LDMOS Frequency: 2.11GHz Gain: 16.4dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 750mA Power - Output: 63W Voltage - Rated: 65V Package / Case: NI-1230S-4 GW Supplier Device Package: NI-1230S-4 GullWing	pacchetto: NI-1230S-4 GW	Azione2.816	2.11GHz	16.4dB	28V	-	-	750mA	63W	65V	NI-1230S-4 GW	NI-1230S-4 GullWing
AFT18H356-24SR6	NXP	FET RF 2CH 65V 1.88GHZ NI1230-4 Transistor Type: - Frequency: 1.88GHz Gain: 15dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.1A Power - Output: 63W Voltage - Rated: 65V Package / Case: NI-1230-4LS2L Supplier Device Package: NI-1230-4LS2L	pacchetto: NI-1230-4LS2L	Azione4.640	1.88GHz	15dB	28V	-	-	1.1A	63W	65V	NI-1230-4LS2L	NI-1230-4LS2L
MRFE6VP6300HR3	NXP	FET RF 2CH 130V 230MHZ NI780-4 Transistor Type: LDMOS (Dual) Frequency: 230MHz Gain: 26.5dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 300W Voltage - Rated: 130V Package / Case: NI-780-4 Supplier Device Package: NI-780-4	pacchetto: NI-780-4	Azione6.192	230MHz	26.5dB	50V	-	-	100mA	300W	130V	NI-780-4	NI-780-4
MRF8S18120HSR3	NXP	FET RF 65V 1.81GHZ NI-780S Transistor Type: LDMOS Frequency: 1.81GHz Gain: 18.2dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 800mA Power - Output: 72W Voltage - Rated: 65V Package / Case: NI-780S Supplier Device Package: NI-780S	pacchetto: NI-780S	Azione6.576	1.81GHz	18.2dB	28V	-	-	800mA	72W	65V	NI-780S	NI-780S
BLM9D2325-20ABZ	Ampleon USA Inc.	BLM9D2325-20AB/SOT1462/REELDP Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.152	-	-	-	-	-	-	-	-	-	-
PD57018S-E	STMicroelectronics	FET RF 65V 945MHZ PWRSO10 Transistor Type: LDMOS Frequency: 945MHz Gain: 16.5dB Voltage - Test: 28V Current Rating: 2.5A Noise Figure: - Current - Test: 100mA Power - Output: 18W Voltage - Rated: 65V Package / Case: PowerSO-10 Exposed Bottom Pad Supplier Device Package: PowerSO-10RF (Straight Lead)	pacchetto: PowerSO-10 Exposed Bottom Pad	Azione3.632	945MHz	16.5dB	28V	2.5A	-	100mA	18W	65V	PowerSO-10 Exposed Bottom Pad	PowerSO-10RF (Straight Lead)
BLS6G2735LS-30,112	Ampleon USA Inc.	RF FET LDMOS 60V 13DB SOT1135B Transistor Type: LDMOS Frequency: 3.1GHz ~ 3.5GHz Gain: 13dB Voltage - Test: 32V Current Rating: - Noise Figure: - Current - Test: 50mA Power - Output: 30W Voltage - Rated: 60V Package / Case: SOT-1135B Supplier Device Package: CDFM2	pacchetto: SOT-1135B	Azione6.752	3.1GHz ~ 3.5GHz	13dB	32V	-	-	50mA	30W	60V	SOT-1135B	CDFM2
2SK3718-T1-A	Renesas Electronics Corporation	RF MOSFET Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
A3T23H300W23SR6	NXP	RF MOSFET LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
CGH35030F	MACOM Technology Solutions	RF MOSFET HEMT 28V 440166 Transistor Type: HEMT Frequency: 3.3GHz ~ 3.9GHz Gain: 11.5dB Voltage - Test: 28 V Current Rating: - Noise Figure: - Current - Test: 120 mA Power - Output: 30W Voltage - Rated: 84 V Package / Case: 440166 Supplier Device Package: 440166	pacchetto: -	Azione45	3.3GHz ~ 3.9GHz	11.5dB	28 V	-	-	120 mA	30W	84 V	440166	440166
CLS3H2731LS-700U	Ampleon USA Inc.	RF MOSFET SOT502 Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-
VRF152GMP	Microchip Technology	RF MOSFET VDMOS 140V Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione30	-	-	-	-	-	-	-	-	-	-
PTFA092201E-V4-R250	MACOM Technology Solutions	RF MOSFET LDMOS 30V H-36260-2 Transistor Type: LDMOS Frequency: 960MHz Gain: 18.5dB Voltage - Test: 30 V Current Rating: 10µA Noise Figure: - Current - Test: 1.85 A Power - Output: 220W Voltage - Rated: 65 V Package / Case: H-36260-2 Supplier Device Package: H-36260-2	pacchetto: -	Request a Quote	960MHz	18.5dB	30 V	10µA	-	1.85 A	220W	65 V	H-36260-2	H-36260-2
CGHV60075D5	MACOM Technology Solutions	RF MOSFET HEMT 50V DIE Transistor Type: HEMT Frequency: 6GHz Gain: 17dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 125 mA Power - Output: 75W Voltage - Rated: 150 V Package / Case: Die Supplier Device Package: Die	pacchetto: -	Request a Quote	6GHz	17dB	50 V	-	-	125 mA	75W	150 V	Die	Die
1214GN-400LV	Microchip Technology	RF MOSFET HEMT 50V 55-KR Transistor Type: HEMT Frequency: 1.2GHz ~ 1.4GHz Gain: 16.8dB Voltage - Test: 50 V Current Rating: - Noise Figure: - Current - Test: 200 mA Power - Output: 400W Voltage - Rated: 150 V Package / Case: 55-KR Supplier Device Package: 55-KR	pacchetto: -	Request a Quote	1.2GHz ~ 1.4GHz	16.8dB	50 V	-	-	200 mA	400W	150 V	55-KR	55-KR
BLC10G15XS-301AVTZ	Ampleon USA Inc.	RF MOSFET LDMOS 30V DFM6 Transistor Type: LDMOS Frequency: 1.452GHz ~ 1.492GHz Gain: 18dB Voltage - Test: 30 V Current Rating: 1.4µA Noise Figure: - Current - Test: 300 mA Power - Output: 305W Voltage - Rated: 65 V Package / Case: SOT-1275-1 Supplier Device Package: DFM6	pacchetto: -	Azione33	1.452GHz ~ 1.492GHz	18dB	30 V	1.4µA	-	300 mA	305W	65 V	SOT-1275-1	DFM6
RF5L0912750CB4	STMicroelectronics	RF MOSFET LDMOS 50V D4E Transistor Type: LDMOS Frequency: 960MHz ~ 1.215GHz Gain: 15dB Voltage - Test: 50 V Current Rating: 1µA Noise Figure: - Current - Test: 150 mA Power - Output: 750W Voltage - Rated: 110 V Package / Case: D4E Supplier Device Package: D4E	pacchetto: -	Request a Quote	960MHz ~ 1.215GHz	15dB	50 V	1µA	-	150 mA	750W	110 V	D4E	D4E