Pagina 88 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AUIRF7309Q	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	pacchetto: 8-SOIC	Azione3.216	Logic Level Gate	30V	4A, 3A	50 mOhm @ 2.4A, 10V	3V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO
AO4801AL_001	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione5.328	Logic Level Gate	30V	5A	48 mOhm @ 5A, 10V	1.3V @ 250µA	9nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4613	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione435.144	Logic Level Gate	30V	-	24 mOhm @ 7.2A, 10V	3V @ 250µA	15nC @ 10V	630pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI3909DV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione156.012	Logic Level Gate	20V	-	200 mOhm @ 1.8A, 4.5V	500mV @ 250µA (Min)	4nC @ 4.5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
NTUD3129PT5G	ON Semiconductor	MOSFET 2P-CH 20V 0.14A SOT-963 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	pacchetto: SOT-963	Azione4.928	Logic Level Gate	20V	140mA	5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
SI5944DU-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 6A 8PWRPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Power - Max: 10W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	pacchetto: PowerPAK? ChipFET? Dual	Azione16.812	Logic Level Gate	40V	6A	112 mOhm @ 3.3A, 10V	3V @ 250µA	6.6nC @ 10V	210pF @ 20V	10W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
FDW2501N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 6A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione59.844	Logic Level Gate	20V	6A	18 mOhm @ 6A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1290pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IPG20N04S412ATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	pacchetto: 8-PowerVDFN	Azione3.664	Standard	40V	20A	12.2 mOhm @ 17A, 10V	4V @ 15µA	18nC @ 10V	1470pF @ 25V	41W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
FMK75-01F	IXYS	MOSFET 2N-CH 100V 75A I4-PAC-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	pacchetto: i4-Pac?-5	Azione3.632	Standard	100V	75A	25 mOhm @ 50A, 10V	4V @ 4mA	180nC @ 10V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	i4-Pac?-5	ISOPLUS i4-PAC?
FDS8984_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione7.136	Logic Level Gate	30V	7A	23 mOhm @ 7A, 10V	2.5V @ 250µA	13nC @ 10V	635pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CPH5617-TL-E	ON Semiconductor	MOSFET 2N-CH 30V 0.15A CPH5 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150mA Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-SMD, Gull Wing Supplier Device Package: 5-CPH	pacchetto: 5-SMD, Gull Wing	Azione4.208	Logic Level Gate	30V	150mA	3.7 Ohm @ 80mA, 4V	-	1.58nC @ 10V	7pF @ 10V	250mW	150°C (TJ)	Surface Mount	5-SMD, Gull Wing	5-CPH
SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione7.968	Logic Level Gate, 1.2V Drive	20V	180mA, 100mA	3 Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
FDMD86100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	pacchetto: 8-PowerWDFN	Azione6.240	Standard	100V	10A	10.5 mOhm @ 10A, 10V	4V @ 250µA	30nC @ 10V	2060pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
AO4612	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 60V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione7.116.912	Logic Level Gate	60V	4.5A, 3.2A	56 mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UM6J1NTN	Rohm Semiconductor	MOSFET 2P-CH 30V 0.2A UMT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione108.012	Logic Level Gate	30V	200mA	1.4 Ohm @ 200mA, 10V	2.5V @ 1mA	-	30pF @ 10V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
FDG6304P	Fairchild/ON Semiconductor	MOSFET 2P-CH 25V 0.41A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 410mA Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione3.579.360	Logic Level Gate	25V	410mA	1.1 Ohm @ 410mA, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	62pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMP2200UDW-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.9A SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione59.928	Standard	20V	900mA	260 mOhm @ 880mA, 4.5V	1.2V @ 250µA	2.1nC @ 4.5V	184pF @ 10V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
G4616	Goford Semiconductor	MOSFET N/P-CH 40V 8A/7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V Power - Max: 2W (Tc), 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOP Supplier Device Package: 8-SOIC (0.154", 3.90mm Width)	pacchetto: -	Azione10.914	-	40V	8A (Tc), 7A (Tc)	20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V	2.5V @ 250µA	12nC @ 10V, 13nC @ 10V	415pF @ 20V, 520pF @ 20V	2W (Tc), 2.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
DMTH4011SPDWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Power - Max: 2.6W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (SWP)	pacchetto: -	Request a Quote	-	40V	11.1A (Ta), 42A (Tc)	15mOhm @ 20A, 10V	4V @ 250µA	10.6nC @ 10V	805pF @ 20V	2.6W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (SWP)
DI016N06PQ2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V Power - Max: 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: TDSON-8-4	pacchetto: -	Request a Quote	Logic Level Gate	60V	16A (Tc)	33mOhm @ 15A, 10V	2.5V @ 250µA	19nC @ 10V	1260pF @ 30V	16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	TDSON-8-4
SI9634DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.2A/8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 2W (Ta), 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Azione29.919	-	60V	6.2A (Ta), 8A (Tc)	29mOhm @ 5A, 10V	3V @ 250µA	11nC @ 10V	420pF @ 30V	2W (Ta), 3.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN5L06VK-13A	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1.2V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MSCSM70AM07CT3AG	Microchip Technology	SIC 2N-CH 700V 353A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Power - Max: 988W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	pacchetto: -	Azione9	-	700V	353A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	988W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
UPA672T-T1-A	Renesas Electronics Corporation	MOSFET 2N-CH 50V 0.1A SC-88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 3V Power - Max: 200mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-SuperMiniMold	pacchetto: -	Request a Quote	Logic Level Gate	50V	100mA	20Ohm @ 10mA, 4V	-	-	6pF @ 3V	200mW	-	Surface Mount	6-TSSOP, SC-88, SOT-363	6-SuperMiniMold
FDB9403	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FDB12N50UTM	Fairchild Semiconductor	MOSFET N-CH 500V 10A D2PAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AO4818	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Request a Quote	-	30V	8A	19mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TSM085NB03DCR	Taiwan Semiconductor Corporation	MOSFET 2N-CH 30V 12A/51A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	pacchetto: -	Request a Quote	Logic Level Gate	30V	12A (Ta), 51A (Tc)	8.5mOhm @ 12A, 10V	2.5V @ 250µA	20nC @ 10V	1091pF @ 15V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)

AUIRF7309Q

Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

pacchetto: 8-SOIC

Azione3.216

Logic Level Gate

30V

4A, 3A

50 mOhm @ 2.4A, 10V

3V @ 250µA

25nC @ 4.5V

520pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO

AO4801AL_001

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione5.328

Logic Level Gate

30V

5A

48 mOhm @ 5A, 10V

1.3V @ 250µA

9nC @ 4.5V

780pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4613

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione435.144

Logic Level Gate

30V

-

24 mOhm @ 7.2A, 10V

3V @ 250µA

15nC @ 10V

630pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI3909DV-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione156.012

Logic Level Gate

20V

-

200 mOhm @ 1.8A, 4.5V

500mV @ 250µA (Min)

4nC @ 4.5V

-

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

NTUD3129PT5G

ON Semiconductor

MOSFET 2P-CH 20V 0.14A SOT-963

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

pacchetto: SOT-963

Azione4.928

Logic Level Gate

20V

140mA

5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

12pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

SI5944DU-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 6A 8PWRPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
Power - Max: 10W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

pacchetto: PowerPAK? ChipFET? Dual

Azione16.812

Logic Level Gate

40V

6A

112 mOhm @ 3.3A, 10V

3V @ 250µA

6.6nC @ 10V

210pF @ 20V

10W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

FDW2501N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione59.844

Logic Level Gate

20V

6A

18 mOhm @ 6A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1290pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IPG20N04S412ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Power - Max: 41W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

pacchetto: 8-PowerVDFN

Azione3.664

Standard

40V

20A

12.2 mOhm @ 17A, 10V

4V @ 15µA

18nC @ 10V

1470pF @ 25V

41W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

FMK75-01F

IXYS

MOSFET 2N-CH 100V 75A I4-PAC-5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

pacchetto: i4-Pac?-5

Azione3.632

Standard

100V

75A

25 mOhm @ 50A, 10V

4V @ 4mA

180nC @ 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

i4-Pac?-5

ISOPLUS i4-PAC?

FDS8984_F085

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione7.136

Logic Level Gate

30V

7A

23 mOhm @ 7A, 10V

2.5V @ 250µA

13nC @ 10V

635pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CPH5617-TL-E

ON Semiconductor

MOSFET 2N-CH 30V 0.15A CPH5

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150mA
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-SMD, Gull Wing
Supplier Device Package: 5-CPH

pacchetto: 5-SMD, Gull Wing

Azione4.208

Logic Level Gate

30V

150mA

3.7 Ohm @ 80mA, 4V

-

1.58nC @ 10V

7pF @ 10V

250mW

150°C (TJ)

Surface Mount

5-SMD, Gull Wing

5-CPH

SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A US6

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione7.968

Logic Level Gate, 1.2V Drive

20V

180mA, 100mA

3 Ohm @ 50mA, 4V

1V @ 1mA

-

9.5pF @ 3V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

FDMD86100

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

pacchetto: 8-PowerWDFN

Azione6.240

Standard

100V

10A

10.5 mOhm @ 10A, 10V

4V @ 250µA

30nC @ 10V

2060pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

AO4612

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.2A
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione7.116.912

Logic Level Gate

60V

4.5A, 3.2A

56 mOhm @ 4.5A, 10V

3V @ 250µA

10.5nC @ 10V

540pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

UM6J1NTN

Rohm Semiconductor

MOSFET 2P-CH 30V 0.2A UMT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione108.012

Logic Level Gate

30V

200mA

1.4 Ohm @ 200mA, 10V

2.5V @ 1mA

-

30pF @ 10V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

FDG6304P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.41A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione3.579.360

Logic Level Gate

25V

410mA

1.1 Ohm @ 410mA, 4.5V

1.5V @ 250µA

1.5nC @ 4.5V

62pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMP2200UDW-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.9A SOT363

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione59.928

Standard

20V

900mA

260 mOhm @ 880mA, 4.5V

1.2V @ 250µA

2.1nC @ 4.5V

184pF @ 10V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

G4616

Goford Semiconductor

MOSFET N/P-CH 40V 8A/7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 7A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 20V, 520pF @ 20V
Power - Max: 2W (Tc), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOP
Supplier Device Package: 8-SOIC (0.154", 3.90mm Width)

pacchetto: -

Azione10.914

-

40V

8A (Tc), 7A (Tc)

20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V

2.5V @ 250µA

12nC @ 10V, 13nC @ 10V

415pF @ 20V, 520pF @ 20V

2W (Tc), 2.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOP

8-SOIC (0.154", 3.90mm Width)

DMTH4011SPDWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Power - Max: 2.6W (Ta), 37.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (SWP)

pacchetto: -

Request a Quote

-

40V

11.1A (Ta), 42A (Tc)

15mOhm @ 20A, 10V

4V @ 250µA

10.6nC @ 10V

805pF @ 20V

2.6W (Ta), 37.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (SWP)

DI016N06PQ2-AQ

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 30V
Power - Max: 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: TDSON-8-4

pacchetto: -

Request a Quote

Logic Level Gate

60V

16A (Tc)

33mOhm @ 15A, 10V

2.5V @ 250µA

19nC @ 10V

1260pF @ 30V

16.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

TDSON-8-4

SI9634DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6.2A/8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 2W (Ta), 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: -

Azione29.919

-

60V

6.2A (Ta), 8A (Tc)

29mOhm @ 5A, 10V

3V @ 250µA

11nC @ 10V

420pF @ 30V

2W (Ta), 3.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN5L06VK-13A

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: -

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-

50V

280mA (Ta)

2Ohm @ 50mA, 5V

1.2V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MSCSM70AM07CT3AG

Microchip Technology

SIC 2N-CH 700V 353A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Power - Max: 988W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

pacchetto: -

Azione9

-

700V

353A (Tc)

6.4mOhm @ 120A, 20V

2.4V @ 12mA

645nC @ 20V

13500pF @ 700V

988W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

UPA672T-T1-A

Renesas Electronics Corporation

MOSFET 2N-CH 50V 0.1A SC-88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 3V
Power - Max: 200mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-SuperMiniMold

pacchetto: -

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Logic Level Gate

50V

100mA

20Ohm @ 10mA, 4V

-

6pF @ 3V

200mW

-

Surface Mount

6-TSSOP, SC-88, SOT-363

6-SuperMiniMold

FDB9403

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

FDB12N50UTM

Fairchild Semiconductor

MOSFET N-CH 500V 10A D2PAK

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

AO4818

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: -

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-

30V

8A

19mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TSM085NB03DCR

Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 12A/51A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1091pF @ 15V
Power - Max: 2W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

pacchetto: -

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Logic Level Gate

30V

12A (Ta), 51A (Tc)

8.5mOhm @ 12A, 10V

2.5V @ 250µA

20nC @ 10V

1091pF @ 15V

2W (Ta), 40W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFNU (5x6)