Pagina 76 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  76/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7752GTRPBF
Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.920
Logic Level Gate
30V
4.6A
30 mOhm @ 4.6A, 10V
2V @ 250µA
9nC @ 4.5V
861pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7530TR
Infineon Technologies

MOSFET 2N-CH 20V 5.4A MICRO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione15.276
Standard
20V
5.4A
30 mOhm @ 5.4A, 4.5V
1.2V @ 250µA
26nC @ 4.5V
1310pF @ 15V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
hot VQ1001P-2
Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA
  • Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
pacchetto: -
Azione18.936
Logic Level Gate
30V
830mA
1.75 Ohm @ 200mA, 5V
2.5V @ 1mA
-
110pF @ 15V
2W
-55°C ~ 150°C (TJ)
Through Hole
-
14-DIP
hot AO4932
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A/8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A, 8A
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione808.692
Logic Level Gate
30V
11A, 8A
12.5 mOhm @ 11A, 10V
2.1V @ 250µA
24nC @ 10V
1400pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot NTLJD2105LTBG
ON Semiconductor

MOSFET N/P-CH 8V 2.5A 6-WDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 520mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
pacchetto: 6-WDFN Exposed Pad
Azione36.000
Standard
8V
2.5A
50 mOhm @ 4A, 4.5V
1V @ 250µA
-
-
520mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
hot SI1026X-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SOT563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
pacchetto: SOT-563, SOT-666
Azione1.760.604
Logic Level Gate
60V
305mA
1.4 Ohm @ 500mA, 10V
2.5V @ 250µA
0.6nC @ 4.5V
30pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
GMM3X100-01X1-SMD
IXYS

MOSFET 6N-CH 100V 90A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD, Gull Wing
  • Supplier Device Package: 24-SMD
pacchetto: 24-SMD, Gull Wing
Azione6.000
Standard
100V
90A
-
4.5V @ 1mA
90nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
24-SMD, Gull Wing
24-SMD
NTLUD4C26NTAG
ON Semiconductor

MOSFET 2N-CH 30V 9.1A 6UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 2.63W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
pacchetto: 6-UDFN Exposed Pad
Azione6.016
Standard
30V
9.1A (Ta)
21 mOhm @ 6A, 10V
1.1V @ 250µA
9nC @ 4.5V
460pF @ 15V
2.63W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-UDFN (2x2)
EMH2418R-TL-H
ON Semiconductor

MOSFET 2N-CH 24V 9A EMH8

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-383FL, EMH8
pacchetto: 8-SMD, Flat Lead
Azione4.592
Logic Level Gate, 2.5V Drive
24V
9A
15 mOhm @ 4A, 4.5V
1.3V @ 1mA
4.4nC @ 4.5V
-
1.3W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-383FL, EMH8
BSO615N G
Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.424
Logic Level Gate
60V
2.6A
150 mOhm @ 2.6A, 4.5V
2V @ 20µA
20nC @ 10V
380pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
hot STS2DNF30L
STMicroelectronics

MOSFET 2N-CH 30V 3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione928.884
Logic Level Gate
30V
3A
110 mOhm @ 1A, 10V
2.5V @ 250µA
4.5nC @ 10V
121pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD310708ASCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 780mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione4.560
Standard
8V
-
-
780mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
hot FDS6890A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione56.208
Logic Level Gate
20V
7.5A
18 mOhm @ 7.5A, 4.5V
1.5V @ 250µA
32nC @ 4.5V
2130pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ECH8660-TL-H
ON Semiconductor

MOSFET N/P-CH 30V 4.5A ECH8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione3.424
Logic Level Gate
30V
4.5A
59 mOhm @ 2A, 10V
-
4.4nC @ 10V
240pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
DMNH6065SPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 27A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
  • Power - Max: 2.4W (Ta), 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
pacchetto: -
Request a Quote
-
60V
27A (Tc)
65mOhm @ 15A, 10V
3V @ 250µA
9.5nC @ 10V
466pF @ 25V
2.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)
BUK7K6R2-40E-1X
Nexperia USA Inc.

MOSFET 40V 40A LFPAK56D

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Power - Max: 68W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: -
Request a Quote
-
40V
40A (Ta)
5.8mOhm @ 20A, 10V
4V @ 1mA
32.3nC @ 10V
2210pF @ 25V
68W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
UPA2650T1E-E2-AT
Renesas Electronics Corporation

MOSFET 2N-CH 20V 3.8A 6MLP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MLP (3x3)
pacchetto: -
Request a Quote
Logic Level Gate
20V
3.8A
65mOhm @ 3A, 10V
2V @ 250µA
2.9nC @ 4.5V
220pF @ 10V
1.1W
-
Surface Mount
6-VDFN Exposed Pad
6-MLP (3x3)
CBB021M12FM3T
Wolfspeed, Inc.

SIC 4N-CH 1200V 50A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
  • Rds On (Max) @ Id, Vgs: 28.9mOhm @ 30A, 15V
  • Vgs(th) (Max) @ Id: 3.9V @ 17mA
  • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 1000V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
50A (Tj)
28.9mOhm @ 30A, 15V
3.9V @ 17mA
162nC @ 15V
5400pF @ 1000V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
STA509A
Sanken Electric USA Inc.

MOSFET 4N-CH 57V 3A 10SIP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 57V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 10V
  • Power - Max: 4W (Ta), 20W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Package / Case: 10-SIP
  • Supplier Device Package: 10-SIP
pacchetto: -
Request a Quote
-
57V
3A (Ta)
250mOhm @ 1A, 10V
2.5V @ 250µA
-
200pF @ 10V
4W (Ta), 20W (Tc)
150°C
Through Hole
10-SIP
10-SIP
NDH8302P
Fairchild Semiconductor

MOSFET 2P-CH 20V 2A SUPERSOT 8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSOP (0.130", 3.30mm Width)
  • Supplier Device Package: SuperSOT™-8
pacchetto: -
Request a Quote
-
20V
2A (Ta)
130mOhm @ 2A, 4.5V
1V @ 250µA
11nC @ 4.5V
515pF @ 10V
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSOP (0.130", 3.30mm Width)
SuperSOT™-8
NDH8321C
Fairchild Semiconductor

MOSFET N/P-CH 20V 3.8A SUPERSOT

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V, 865pF @ 10V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSOP (0.130", 3.30mm Width)
  • Supplier Device Package: SuperSOT™-8
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-
20V
3.8A (Ta), 2.7A (Ta)
35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
1V @ 250µA
28nC @ 4.5V, 23nC @ 4.5V
700pF @ 10V, 865pF @ 10V
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSOP (0.130", 3.30mm Width)
SuperSOT™-8
IRF7103TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 50V 3A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
pacchetto: -
Azione11.985
-
50V
3A (Ta)
130mOhm @ 3A, 10V
3V @ 250µA
30nC @ 10V
290pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-902
FDG6332C-F085
onsemi

MOSFET N/P-CH 20V 0.7A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88 (SC-70-6)
pacchetto: -
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Logic Level Gate
20V
700mA, 600mA
300mOhm @ 700mA, 4.5V
1.5V @ 250µA
1.5nC @ 4.5V
113pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
G20N06D52
Goford Semiconductor

MOSFET 2N-CH 60V 20A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1326pF @ 30V
  • Power - Max: 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-DFN (4.9x5.75)
  • Supplier Device Package: 8-PowerTDFN
pacchetto: -
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-
60V
20A (Tc)
30mOhm @ 20A, 10V
2.5V @ 250µA
25nC @ 10V
1326pF @ 30V
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-DFN (4.9x5.75)
8-PowerTDFN
SSF7120
Good-Ark Semiconductor

MOSFET N/P-CH 20V 0.8A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
  • Power - Max: 312mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione17.328
-
20V
800mA (Tc), 400mA (Tc)
300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
1V @ 250µA
2nC @ 4.5V
75pF @ 10V, 78pF @ 10V
312mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN3055LFDBQ-7
Diodes Incorporated

MOSFET 2N-CH 30V 5A 6UDFN

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
  • Power - Max: 810mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: -
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-
30V
5A (Ta)
40mOhm @ 3A, 4.5V
1.5V @ 250µA
11.2nC @ 10V
458pF @ 15V
810mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMHT3006LFJ-13
Diodes Incorporated

MOSFET 4N-CH 30V 13A 12VDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
  • Power - Max: 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerVDFN
  • Supplier Device Package: V-DFN5045-12 (Type C)
pacchetto: -
Azione8.790
-
30V
13A (Ta)
10mOhm @ 10A, 10V
3V @ 250µA
17nC @ 10V
1171pF @ 15V
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerVDFN
V-DFN5045-12 (Type C)
VEC2616-TL-H
onsemi

MOSFET N/P-CH 60V 3A/2.5A SOT28

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
pacchetto: -
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Logic Level Gate
60V
3A, 2.5A
80mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8