Pagina 72 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  72/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7335D1TR
Infineon Technologies

MOSFET 2N-CH 30V 10A 14-SOIC

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacchetto: 14-SOIC (0.154", 3.90mm Width)
Azione7.552
Logic Level Gate
30V
10A
17.5 mOhm @ 10A, 4.5V
1V @ 250µA
20nC @ 4.5V
1500pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot MCH6606-TL-E
ON Semiconductor

MOSFET PCH DUAL MCPH6

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione28.164
-
-
-
-
-
-
-
-
-
-
-
-
APTM100VDA35T3G
Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
pacchetto: SP3
Azione5.920
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
hot SI7964DP-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 60V 6.1A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione8.964
Standard
60V
6.1A
23 mOhm @ 9.6A, 10V
4.5V @ 250µA
65nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI4965DY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 8V 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione274.908
Logic Level Gate
8V
-
21 mOhm @ 8A, 4.5V
450mV @ 250µA (Min)
55nC @ 4.5V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
TPCP8203(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 4.7A PS-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 360mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
pacchetto: 8-SMD, Flat Lead
Azione4.896
Standard
40V
4.7A
-
2.5V @ 1mA
-
-
360mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
PS-8 (2.9x2.4)
hot FDW2503NZ
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione1.191.696
Logic Level Gate
20V
5.5A
20 mOhm @ 5.5A, 4.5V
1.5V @ 250µA
17nC @ 4.5V
1286pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDW2508P
Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 6A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 6V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione302.952
Logic Level Gate
12V
6A
18 mOhm @ 6A, 4.5V
1.5V @ 250µA
36nC @ 4.5V
2644pF @ 6V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot STC5DNF30V
STMicroelectronics

MOSFET 2N-CH 30V 4.5A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.3A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione128.556
Logic Level Gate
30V
4.5A
35 mOhm @ 2.3A, 4.5V
600mV @ 250µA
11.5nC @ 4.5V
460pF @ 25V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
APTSM120AM14CD3AG
Microsemi Corporation

POWER MODULE - SIC

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
  • Power - Max: 2140W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: Module
Azione7.584
Silicon Carbide (SiC)
1200V (1.2kV)
337A (Tc)
11 mOhm @ 180A, 20V
3V @ 9mA
1224nC @ 20V
23000pF @ 1000V
2140W
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
GWM180-004X2-SL
IXYS

MOSFET 6N-CH 40V 180A 17-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: 17-SMD, Flat Leads
Azione7.712
Standard
40V
180A
2.5 mOhm @ 100A, 10V
4.5V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
GMM3X160-0055X2-SMD
IXYS

MOSFET 6N-CH 55V 150A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD, Gull Wing
  • Supplier Device Package: 24-SMD
pacchetto: 24-SMD, Gull Wing
Azione5.632
Standard
55V
150A
-
4V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
24-SMD, Gull Wing
24-SMD
ALD1102BPAL
Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

  • FET Type: 2 P-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione5.008
Standard
10.6V
-
270 Ohm @ 5V
1.2V @ 10µA
-
10pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
NTMFD4C86NT3G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
  • Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: 8-PowerTDFN
Azione4.992
Standard
30V
11.3A, 18.1A
5.4 mOhm @ 30A, 10V
2.2V @ 250µA
22.2nC @ 10V
1153pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6)
NTLLD4951NFTWG
ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
  • Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
  • Power - Max: 800mW, 810mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-WDFN (3x3)
pacchetto: 8-PowerWDFN
Azione2.848
Standard
30V
5.5A, 6.3A
17.4 mOhm @ 9A, 10V
2.2V @ 250µA
12nC @ 10V
605pF @ 15V
800mW, 810mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-WDFN (3x3)
hot SH8K2TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 6A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: 8-SOP (5.0x6.0)
pacchetto: 8-SMD, Gull Wing
Azione46.224
Logic Level Gate
30V
6A
30 mOhm @ 6A, 10V
2.5V @ 1mA
10.1nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SMD, Gull Wing
8-SOP (5.0x6.0)
SI4532ADY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.13W, 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.968
Logic Level Gate
30V
3.7A, 3A
53 mOhm @ 4.9A, 10V
1V @ 250µA
16nC @ 10V
-
1.13W, 1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CSD87333Q3D
Texas Instruments

MOSFET 2N-CH 30V 15A 8SON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
  • Power - Max: 6W
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-VSON (3.3x3.3)
pacchetto: 8-PowerTDFN
Azione6.304
Logic Level Gate, 5V Drive
30V
15A
14.3 mOhm @ 4A, 8V
1.2V @ 250µA
4.6nC @ 4.5V
662pF @ 15V
6W
125°C (TJ)
Surface Mount
8-PowerTDFN
8-VSON (3.3x3.3)
ALD310702SCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 180mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
pacchetto: 16-SOIC (0.154", 3.90mm Width)
Azione5.968
Standard
8V
-
-
180mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
QS8K13TCR
Rohm Semiconductor

MOSFET 2N-CH 30V 6A TSMT8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 10V
  • Power - Max: 550mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: 8-SMD, Flat Lead
Azione2.960
Standard
30V
6A
28 mOhm @ 6A, 10V
2.5V @ 1mA
20nC @ 10V
390pF @ 10V
550mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
hot FDS8978
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione137.412
Logic Level Gate
30V
7.5A
18 mOhm @ 7.5A, 10V
2.5V @ 250µA
26nC @ 10V
1270pF @ 15V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
QH8JE5TCR
Rohm Semiconductor

-100V DUAL PCH+PCH, TSMT8, POWER

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 50V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
pacchetto: -
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-
100V
2A (Ta)
270mOhm @ 2A, 10V
2.5V @ 1mA
19.7nC @ 10V
590pF @ 50V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
FF17MR12W1M1HB11BPSA1
Infineon Technologies

SIC 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
pacchetto: -
Azione72
-
1200V (1.2kV)
-
-
-
-
-
-
-
Chassis Mount
Module
AG-EASY1B
SH8M31GZETB
Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.398
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60V
4.5A (Ta)
65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
3V @ 1mA
7nC @ 5V, 40nC @ 10V
500pF @ 10V, 2500pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MSCSM120AM03CT6LIAG
Microchip Technology

SIC 2N-CH 1200V 805A SP6C LI

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV
  • Power - Max: 3.215kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C LI
pacchetto: -
Azione6
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1200V (1.2kV)
805A (Tc)
3.1mOhm @ 400A, 20V
2.8V @ 10mA
2320nC @ 20V
30200pF @ 1kV
3.215kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C LI
DMP31D1UVTQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
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-
30V
760mA (Ta)
1Ohm @ 400mA, 4.5V
1.1V @ 250µA
1.6nC @ 8V
54pF @ 15V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
SSFK9120
Good-Ark Semiconductor

MOSFET N/P-CH 20V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
  • Power - Max: 275mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione17.850
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20V
800mA (Tc), 400mA (Tc)
300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
1V @ 250µA
2nC @ 4.5V
75pF @ 10V, 78pF @ 10V
275mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CCB016M12GM3T
Wolfspeed, Inc.

SIC MODULE 1200V

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
  • Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 3.9V @ 23mA
  • Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
  • Power - Max: 10mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione153
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1200V (1.2kV)
50A (Tj)
20.8mOhm @ 50A, 15V
3.9V @ 23mA
236nC @ 15V
6700pF @ 1000V
10mW
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module