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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  64/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7756
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione82.800
Logic Level Gate
12V
4.3A
40 mOhm @ 4.3A, 4.5V
900mV @ 250µA
18nC @ 4.5V
1400pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI6933DQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.216
Logic Level Gate
30V
-
45 mOhm @ 3.5A, 10V
1V @ 250µA (Min)
30nC @ 10V
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI4818DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W, 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione39.408
Logic Level Gate
30V
5.3A, 7A
22 mOhm @ 6.3A, 10V
800mV @ 250µA (Min)
12nC @ 5V
-
1W, 1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GWM220-004P3-SMD SAM
IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: 17-SMD, Gull Wing
Azione3.808
Standard
40V
180A
-
4V @ 1mA
94nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
TPC8213-H(TE12LQ,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione7.136
Logic Level Gate
60V
5A
50 mOhm @ 2.5A, 10V
2.3V @ 1mA
11nC @ 10V
625pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot ZXMD65P02N8TC
Diodes Incorporated

MOSFET 2P-CH 20V 4A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V
  • Power - Max: 1.75W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione384.144
Standard
20V
4A
50 mOhm @ 2.9A, 4.5V
700mV @ 250µA (Min)
20nC @ 4.5V
960pF @ 15V
1.75W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMD63C02XTC
Diodes Incorporated

MOSFET N/P-CH 20V 8MSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione10.032
Logic Level Gate
20V
-
130 mOhm @ 1.7A, 4.5V
700mV @ 250µA (Min)
6nC @ 4.5V
350pF @ 15V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
GMM3X180-004X2-SMDSAM
IXYS

MOSFET 6N-CH 40V 180A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD, Gull Wing
  • Supplier Device Package: 24-SMD
pacchetto: 24-SMD, Gull Wing
Azione2.592
Standard
40V
180A
-
4.5V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
24-SMD, Gull Wing
24-SMD
AUIRF7343QTR
Infineon Technologies

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.568
Logic Level Gate
55V
4.7A, 3.4A
50 mOhm @ 4.7A, 10V
1V @ 250µA
36nC @ 10V
740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NVTJD4001NT1G
ON Semiconductor

MOSFET 2N-CH 30V 0.25A SC-88

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Power - Max: 272mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione38.160
Standard
30V
250mA
1.5 Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot FDMS3620S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/38A 8PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A, 38A
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
pacchetto: 8-PowerTDFN
Azione46.656
Logic Level Gate
25V
17.5A, 38A
4.7 mOhm @ 17.5A, 10V
2V @ 250µA
26nC @ 10V
1570pF @ 13V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
SLA5075
Sanken

MOSFET 6N-CH 500V 5A 15-SIP

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP, Exposed Tab, Formed Leads
  • Supplier Device Package: 15-SIP
pacchetto: 15-SIP, Exposed Tab, Formed Leads
Azione7.408
Standard
500V
5A
1.4 Ohm @ 2.5A, 10V
4V @ 1mA
-
770pF @ 10V
5W
150°C (TJ)
Through Hole
15-SIP, Exposed Tab, Formed Leads
15-SIP
hot NTGD4167CT1G
ON Semiconductor

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A, 1.9A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione1.109.352
Logic Level Gate
30V
2.6A, 1.9A
90 mOhm @ 2.6A, 4.5V
1.5V @ 250µA
5.5nC @ 4.5V
295pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
UT6J3TCR
Rohm Semiconductor

-20V PCH+PCH POWER MOSFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: HUML2020L8
pacchetto: 6-UDFN Exposed Pad
Azione24.978
-
20V
3A
85 mOhm @ 3A, 4.5V
1V @ 1mA
8.5nC @ 4.5V
2000pF @ 10V
2W
150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
HUML2020L8
DMG5802LFX-7
Diodes Incorporated

MOSFET 2N-CH 24V 6.5A 6DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
  • Power - Max: 980mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFDFN Exposed Pad
  • Supplier Device Package: W-DFN5020-6
pacchetto: 6-VFDFN Exposed Pad
Azione28.458
Logic Level Gate
24V
6.5A
15 mOhm @ 6.5A, 4.5V
1.5V @ 250µA
31.3nC @ 10V
1066.4pF @ 15V
980mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VFDFN Exposed Pad
W-DFN5020-6
hot FDS8958B
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione325.848
Logic Level Gate
30V
6.4A, 4.5A
26 mOhm @ 6.4A, 10V
3V @ 250µA
12nC @ 10V
540pF @ 15V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NDC7003P
Fairchild/ON Semiconductor

MOSFET 2P-CH 60V 0.34A SSOT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione246.588
Logic Level Gate
60V
340mA
5 Ohm @ 340mA, 10V
3.5V @ 250µA
2.2nC @ 10V
66pF @ 25V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
2N7002V
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 0.28A SOT-563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563F
pacchetto: SOT-563, SOT-666
Azione159.678
Logic Level Gate
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563F
BSS138DWK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.31A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 330mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Request a Quote
-
50V
310mA (Ta)
2.6Ohm @ 200mA, 10V
1.5V @ 250µA
0.8nC @ 10V
22pF @ 25V
330mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
UPA2350BT1G-E4-A
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
6LN04CH-TL-E
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
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MSCSM170DUM11T3AG
Microchip Technology

SIC 2N-CH 1700V 240A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
  • Power - Max: 1140W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
pacchetto: -
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1700V (1.7kV)
240A (Tc)
11.3mOhm @ 120A, 20V
3.2V @ 10mA
712nC @ 20V
13200pF @ 1000V
1140W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
MMFTN620KDW-AQ
Diotec Semiconductor

MOSFET, SOT-363, 60V, 0.35A, 0,

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V
  • Power - Max: 320mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione9.000
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60V
350mA (Ta)
2Ohm @ 100mA, 4.5V
1V @ 250µA
-
320pF @ 30V
320mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
SOT-363
CCB021M12FM3T
Wolfspeed, Inc.

SIC 6N-CH 1200V 51A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tj)
  • Rds On (Max) @ Id, Vgs: 27.9mOhm @ 30A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 17.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
pacchetto: -
Azione12
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1200V (1.2kV)
51A (Tj)
27.9mOhm @ 30A, 15V
3.6V @ 17.7mA
162nC @ 15V
4900pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
BSS8402DW-TP
Micro Commercial Co

MOSFET N/P-CH 60V/50V SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V, 50V
  • Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione5.139
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60V, 50V
115mA, 130mA
2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
2.5V @ 250µA, 2V @ 250µA
-
50pF @ 25V, 30pF @ 25V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
TSM110NB04DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 10A/48A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
  • Power - Max: 2W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 155°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
pacchetto: -
Azione44.646
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40V
10A (Ta), 48A (Tc)
11mOhm @ 10A, 10V
4V @ 250µA
25nC @ 10V
1506pF @ 20V
2W (Ta), 48W (Tc)
-55°C ~ 155°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFN (5x6)
SI4953ADY-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 3.7A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
30V
3.7A
53mOhm @ 4.9A, 10V
1V @ 250µA (Min)
25nC @ 10V
-
1.1W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SIZ988DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 40A 8PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
  • Power - Max: 20.2W, 40W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair®
pacchetto: -
Azione30.669
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30V
40A (Tc), 60A (Tc)
7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
2.4V @ 250µA, 2.2V @ 250µA
10.5nC @ 4.5V, 23.1nC @ 4.5V
1000pF @ 15V, 2425pF @ 15V
20.2W, 40W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair®