Pagina 62 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
Contattaci
SalesDept@heisener.com +86-755-83210559 ext. 805
Accesso/Registrati
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrello 0

Transistor - FET, MOSFET - Array

Record 5.684
Pagina  62/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APTC60DDAM70CT1G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
pacchetto: SP1
Azione6.272
Super Junction
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
SI5905BDC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione2.640
Logic Level Gate
8V
4A
80 mOhm @ 3.3A, 4.5V
1V @ 250µA
11nC @ 8V
350pF @ 4V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
BSL207NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 2.1A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP-6-1
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione5.392
Logic Level Gate, 2.5V Drive
20V
2.1A
70 mOhm @ 2.1A, 4.5V
1.2V @ 11µA
2.1nC @ 4.5V
419pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP-6-1
APTM120H140FT1G
Microsemi Corporation

MOSFET 4N-CH 1200V 8A SP1

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
pacchetto: SP1
Azione3.216
Standard
1200V (1.2kV)
8A
1.68 Ohm @ 7A, 10V
5V @ 1mA
145nC @ 10V
3812pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
GMM3X60-015X2-SMD
IXYS

MOSFET 6N-CH 150V 50A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL?
  • Supplier Device Package: ISOPLUS-DIL?
pacchetto: ISOPLUS-DIL?
Azione4.352
Standard
150V
50A
24 mOhm @ 38A, 10V
4.5V @ 1mA
97nC @ 10V
5800pF @ 25V
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL?
ISOPLUS-DIL?
AON2803
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3.8A 6DFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x2)
pacchetto: 6-WDFN Exposed Pad
Azione2.480
Logic Level Gate
20V
3.8A
70 mOhm @ 3.8A, 4.5V
1V @ 250µA
12nC @ 4.5V
560pF @ 10V
1.5W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-DFN-EP (2x2)
SIS990DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 100V 12.1A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12.1A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
  • Power - Max: 25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione2.176
Standard
100V
12.1A
85 mOhm @ 8A, 10V
4V @ 250µA
8nC @ 10V
250pF @ 50V
25W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
DMNH6042SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.472
Standard
60V
16.7A (Tc)
50 mOhm @ 5.1A, 10V
3V @ 250µA
4.2nC @ 4.5V
584pF @ 25V
2.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SH8KA4TB
Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione26.928
-
30V
9A
21.4 mOhm @ 9A, 10V
2.5V @ 1mA
15.5nC @ 10V
640pF @ 15V
3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot ZXMD63P03XTA
Diodes Incorporated

MOSFET 2P-CH 30V 8-MSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Power - Max: 1.04W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Azione180.384
Logic Level Gate
30V
-
185 mOhm @ 1.2A, 10V
1V @ 250µA (Min)
7nC @ 10V
270pF @ 25V
1.04W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
hot DMN66D0LDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.115A SOT-363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione48.958.512
Logic Level Gate
60V
115mA
5 Ohm @ 115mA, 10V
2V @ 250µA
-
23pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
APTM50HM75STG
Microsemi Corporation

MOSFET 4N-CH 500V 46A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 46A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione6.016
Standard
500V
46A
90 mOhm @ 23A, 10V
5V @ 2.5mA
123nC @ 10V
5600pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot FDMA3028N
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.8A 6MICROFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
pacchetto: 6-VDFN Exposed Pad
Azione435.192
Logic Level Gate
30V
3.8A
68 mOhm @ 3.8A, 4.5V
1.5V @ 250µA
5.2nC @ 5V
375pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
MSCSM170AM029T6LIAG
Microchip Technology

SIC MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
TQM250NB06DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 6A/30A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V
  • Power - Max: 2.5W (Ta), 58W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
pacchetto: -
Azione22.365
-
60V
6A (Ta), 30A (Tc)
25mOhm @ 6A, 10V
3.8V @ 250µA
24nC @ 10V
1398pF @ 30V
2.5W (Ta), 58W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
8-PDFNU (5x6)
UPA1970TE-T1-AT
Renesas Electronics Corporation

MOSFET 2N-CH 20V 2.2A SC95-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Power - Max: 1.15W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-95-6
  • Supplier Device Package: SC-95-6, Mini Mold Thin
pacchetto: -
Request a Quote
Logic Level Gate
20V
2.2A
69mOhm @ 1A, 4.5V
1.5V @ 1mA
2.3nC @ 4V
160pF @ 10V
1.15W
-
Surface Mount
SC-95-6
SC-95-6, Mini Mold Thin
KFCAB21490LE
Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 13.5A, 2.2M

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V
  • Power - Max: 540mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-SMD
pacchetto: -
Request a Quote
-
12V
13.5A (Ta)
2.75mOhm @ 6A, 4.5V
1.4V @ 1.11mA
25nC @ 4V
3570pF @ 10V
540mW (Ta)
150°C
Surface Mount
10-SMD, No Lead
10-SMD
DMC2991UDA-7B
Diodes Incorporated

MOSFET N/P-CH 20V 0.48A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
pacchetto: -
Azione29.592
-
20V
480mA (Ta), 350mA (Ta)
990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.35nC @ 4.5V, 0.3nC @ 4.5V
21.5pF @ 16V, 17pF @ 15V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6
PJQ2815_R1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 4.2A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: DFN2020-6L
pacchetto: -
Azione23.310
-
20V
4.2A (Ta)
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
24nC @ 4.5V
907pF @ 10V
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
DFN2020-6L
RFIS30P06
Harris Corporation

MOSFET P-CH 60V 30A

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AOC3864
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XDFN
  • Supplier Device Package: 6-DFN (2.7x1.8)
pacchetto: -
Request a Quote
-
-
-
-
1.3V @ 250µA
38nC @ 4.5V
-
2.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-XDFN
6-DFN (2.7x1.8)
SQ4917EY-T1_BE3
Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
  • Power - Max: 5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione66.990
-
60V
8A (Tc)
48mOhm @ 4.3A, 10V
2.5V @ 250µA
65nC @ 10V
1910pF @ 30V
5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DI2A8N03PWK2-AQ
Diotec Semiconductor

IC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 15V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-QFN (2x2)
pacchetto: -
Request a Quote
-
30V
2.8A (Ta)
72mOhm @ 2A, 4.5V
1.2V @ 250µA
6.8nC @ 4.5V
387pF @ 15V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-QFN (2x2)
DMP22D5UDR4-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.36A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V
  • Power - Max: 380mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: X2-DFN1010-6 (Type UXC)
pacchetto: -
Azione13.977
-
20V
360mA (Ta)
1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.3nC @ 4.5V
17pF @ 16V
380mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
X2-DFN1010-6 (Type UXC)
SSM14N956L-EFF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.33W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SMD, No Lead
  • Supplier Device Package: TCSPED-302701
pacchetto: -
Azione29.565
-
12V
20A (Ta)
1.35mOhm @ 10A, 4.5V
1.4V @ 1.57mA
76nC @ 4V
-
1.33W (Ta)
150°C
Surface Mount
14-SMD, No Lead
TCSPED-302701
PJS6812_S1_00001
Panjit International Inc.

MOSFET 2N-CH 20V 3.7A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
pacchetto: -
Azione31.719
-
20V
3.7A (Ta)
56mOhm @ 3.7A, 4.5V
1.2V @ 250µA
4.57nC @ 4.5V
350pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
NVMJD027N06CLTWG
onsemi

MOSFET 2N-CH 60V 7.7A 8LFPAK

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 21A (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 30V
  • Power - Max: 3.2W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: 8-LFPAK
pacchetto: -
Request a Quote
-
60V
7.7A (Ta), 21A (Tc)
27mOhm @ 9A, 10V
2.2V @ 13µA
5nC @ 10V
335pF @ 30V
3.2W (Ta), 24W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
8-LFPAK
UPA1602GS-E1-A
Renesas

MOSFET 7N-CH 30V 0.43A 16SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Rds On (Max) @ Id, Vgs: 5.3Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 150mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF
  • Power - Max: 1W (Ta)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.220", 5.59mm Width)
  • Supplier Device Package: 16-SOP
pacchetto: -
Request a Quote
-
30V
430mA (Ta)
5.3Ohm @ 150mA, 4.5V
1V @ 150mA
-
10pF
1W (Ta)
-40°C ~ 85°C
Surface Mount
16-SOIC (0.220", 5.59mm Width)
16-SOP