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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  5/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSO4804HUMA2
Infineon Technologies

DIODE ARRAY 2N-CH 30V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.480
Logic Level Gate
30V
8A (Ta)
20 mOhm @ 8A, 10V
2V @ 30µA
17nC @ 5V
870pF @ 25V
2W
-55°C ~ 150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
BSD235C L6327
Infineon Technologies

MOSFET N/P-CH 20V SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
pacchetto: 6-VSSOP, SC-88, SOT-363
Azione2.832
Logic Level Gate
20V
950mA, 530mA
350 mOhm @ 950mA, 4.5V
1.2V @ 1.6µA
0.34nC @ 4.5V
47pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
AO4812L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.904
Standard
30V
6A
30 mOhm @ 6A, 10V
2.4V @ 250µA
6.3nC @ 10V
310pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FW274-TL-E
ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
  • Power - Max: 2.2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.173", 4.40mm Width)
Azione488.544
Logic Level Gate
30V
6A
37 mOhm @ 6A, 10V
2.6V @ 1mA
9.1nC @ 10V
490pF @ 10V
2.2W
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
TPCL4201(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
pacchetto: 4-XLGA
Azione2.880
Standard
-
-
-
1.2V @ 200µA
-
720pF @ 10V
500mW
150°C (TJ)
Surface Mount
4-XLGA
4-Chip LGA
hot SI7901EDN-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione110.400
Logic Level Gate
20V
4.3A
48 mOhm @ 6.3A, 4.5V
1V @ 800µA
18nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
SI5905DC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 8V 3A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione3.440
Logic Level Gate
8V
3A
90 mOhm @ 3A, 4.5V
450mV @ 250µA (Min)
9nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot AO8803
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 7A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione61.356
Logic Level Gate
12V
-
18 mOhm @ 7A, 4.5V
1V @ 250µA
44nC @ 4.5V
4750pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BSZ215CHXTMA1
Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TSDSON-8-FL
pacchetto: 8-PowerTDFN
Azione4.944
Logic Level Gate, 2.5V Drive
20V
5.1A, 3.2A
55 mOhm @ 5.1A, 4.5V
1.4V @ 110µA
2.8nC @ 4.5V
419pF @ 10V
2.5W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PG-TSDSON-8-FL
VMM90-09P
IXYS

MOSFET 2N-CH 900V 85A Y3-LI

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.288
-
-
-
-
-
-
-
-
-
-
-
-
APTC60DDAM70T1G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

  • FET Type: 2 N Channel (Dual Buck Chopper)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
pacchetto: SP1
Azione3.856
Logic Level Gate
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
ALD110908PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
  • Vgs(th) (Max) @ Id: 820mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione5.744
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.8V
820mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
NVMFD5875NLWFT3G
ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
pacchetto: 8-PowerTDFN
Azione2.800
Logic Level Gate
60V
7A
33 mOhm @ 7.5A, 10V
3V @ 250µA
20nC @ 10V
540pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DMN2022UNS-13
Diodes Incorporated

MOSFET 8V 24V POWERDI3333-8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
pacchetto: 8-PowerVDFN
Azione3.376
Standard
20V
10.7A (Ta)
10.8 mOhm @ 4A, 4.5V
1V @ 250µA
20.3nC @ 4.5V
1870pF @ 10V
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8
SSM6P36FE,LM
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA
  • Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
pacchetto: SOT-563, SOT-666
Azione2.400
Logic Level Gate
20V
330mA
1.31 Ohm @ 100mA, 4.5V
1V @ 1mA
1.2nC @ 4V
43pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
hot SIZ710DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 16A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 35A
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
pacchetto: 6-PowerPair?
Azione540.420
Logic Level Gate
20V
16A, 35A
6.8 mOhm @ 19A, 10V
2.2V @ 250µA
18nC @ 10V
820pF @ 10V
27W, 48W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
hot FDMS7700S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/22A POWER56

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A, 22A
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: Power56
pacchetto: 8-PowerWDFN
Azione39.252
Logic Level Gate
30V
12A, 22A
7.5 mOhm @ 12A, 10V
3V @ 250µA
28nC @ 10V
1750pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
Power56
hot FDS89161
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 2.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione58.200
Logic Level Gate
100V
2.7A
105 mOhm @ 2.7A, 10V
4V @ 250µA
4.1nC @ 10V
210pF @ 50V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
IRF7329PBF
Infineon Technologies

MOSFET 2P-CH 12V 9.2A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione29.730
Logic Level Gate
12V
9.2A
17 mOhm @ 9.2A, 4.5V
900mV @ 250µA
57nC @ 4.5V
3450pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot QS6M4TR
Rohm Semiconductor

MOSFET N/P-CH 30V/20V 1.5A TSMT6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSMT6 (SC-95)
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione313.884
Logic Level Gate
30V, 20V
1.5A
230 mOhm @ 1.5A, 4.5V
1.5V @ 1mA
1.6nC @ 4.5V
80pF @ 10V
1.25W
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSMT6 (SC-95)
EFC2K102NUZTDG
onsemi

MOSFET 2N-CH 12V 33A 10WLCSP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-WLCSP (2.98x1.49)
pacchetto: -
Azione14.685
Logic Level Gate, 2.5V Drive
12V
33A (Ta)
2.65mOhm @ 5A, 4.5V
1.3V @ 1mA
42nC @ 3.8V
-
3.1W (Ta)
150°C (TJ)
Surface Mount
10-SMD, No Lead
10-WLCSP (2.98x1.49)
DMT10H032LDV-13
Diodes Incorporated

MOSFET 2N-CH 100V 18A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
pacchetto: -
Request a Quote
-
100V
18A (Tc)
36mOhm @ 10A, 10V
2.5V @ 250µA
11.9nC @ 10V
683pF @ 50V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
SH8ME5TB1
Rohm Semiconductor

MOSFET 100V 4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, 2100pF @ 50V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione7.254
-
100V
4.5A (Ta)
58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
2.5V @ 1mA
6.7nC @ 10V, 52nC @ 10V
305pF @ 50V, 2100pF @ 50V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN5L06VK-7A
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Request a Quote
-
50V
280mA (Ta)
2Ohm @ 50mA, 5V
1.2V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMP2900UVQ-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.85A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
Azione5.565
-
20V
850mA (Ta)
750mOhm @ 430mA, 4.5V
1V @ 250µA
0.7nC @ 4.5V
49pF @ 16V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MCH6634-TL-E
onsemi

PCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
NDS9957
onsemi

MOSFET 2N-CH 60V 2.6A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 30V
  • Power - Max: 900mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
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Logic Level Gate
60V
2.6A
160mOhm @ 2.6A, 10V
3V @ 250µA
12nC @ 10V
200pF @ 30V
900mW
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MCH6608-TL-E
onsemi

NCH+NCH 2.5V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
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