Pagina 192 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  192/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7756TRPBF
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione7.024
Logic Level Gate
12V
4.3A
40 mOhm @ 4.3A, 4.5V
900mV @ 250µA
18nC @ 4.5V
1400pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
TPCL4202(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
pacchetto: 4-XLGA
Azione2.688
Standard
-
-
-
1.2V @ 200µA
-
780pF @ 10V
500mW
150°C (TJ)
Surface Mount
4-XLGA
4-Chip LGA
hot SI6969DQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione36.000
Logic Level Gate
12V
-
34 mOhm @ 4.6A, 4.5V
450mV @ 250µA (Min)
40nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6966DQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione15.504
Logic Level Gate
20V
4A
30 mOhm @ 4.5A, 4.5V
1.4V @ 250µA
20nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6943BDQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione73.212
Logic Level Gate
12V
2.3A
80 mOhm @ 2.5A, 4.5V
800mV @ 250µA
10nC @ 4.5V
-
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI4816DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W, 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione6.480
Logic Level Gate
30V
5.3A, 7.7A
22 mOhm @ 6.3A, 10V
2V @ 250µA
12nC @ 5V
-
1W, 1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NTJD4001NT2G
ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
  • Power - Max: 272mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione478.044
Standard
30V
250mA
1.5 Ohm @ 10mA, 4V
1.5V @ 100µA
1.3nC @ 5V
33pF @ 5V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
NTQD6968N
ON Semiconductor

MOSFET 2N-CH 20V 6.2A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
  • Power - Max: 1.39W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione6.656
Logic Level Gate
20V
6.2A
22 mOhm @ 7A, 4.5V
1.2V @ 250µA
17nC @ 4.5V
630pF @ 16V
1.39W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDS4935
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 7A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione148.740
Logic Level Gate
30V
7A
23 mOhm @ 7A, 10V
3V @ 250µA
21nC @ 5V
1233pF @ 15V
2W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
CSD88584Q5DC
Texas Instruments

MOSFET ARRAY 2N-CH 40A 22VSON

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 22-PowerTFDFN
  • Supplier Device Package: 22-VSON-CLIP (5x6)
pacchetto: 22-PowerTFDFN
Azione7.344
Standard
40V
-
0.95 mOhm @ 30A, 10V
2.3V @ 250µA
88nC @ 4.5V
12400pF @ 20V
12W
-55°C ~ 150°C (TJ)
Surface Mount
22-PowerTFDFN
22-VSON-CLIP (5x6)
hot SI7212DN-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione66.396
Logic Level Gate
30V
4.9A
36 mOhm @ 6.8A, 10V
1.6V @ 250µA
11nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
DMPH6050SSD-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

  • FET Type: 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.888
Standard
-
5.2A (Ta)
48 mOhm @ 5A, 10V
3V @ 250µA
14.5nC @ 4.5V
1525pF @ 30V
-
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMP2065UFDB-7
Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • FET Type: 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
  • Power - Max: 1.54W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione3.296
Standard
20V
4.5A (Ta)
50 mOhm @ 2A, 4.5V
1V @ 250µA
9.1nC @ 4.5V
752pF @ 15V
1.54W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
BSC0921NDIATMA1
Infineon Technologies

MOSFET 2N-CH 30V 17A/31A TISON8

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A, 31A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TISON-8
pacchetto: 8-PowerTDFN
Azione42.804
Logic Level Gate, 4.5V Drive
30V
17A, 31A
5 mOhm @ 20A, 10V
2V @ 250µA
8.9nC @ 4.5V
1025pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PG-TISON-8
ECH8690-TL-H
ON Semiconductor

MOSFET N/P-CH 60V ECH8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione29.532
Logic Level Gate, 4V Drive
60V
4.7A, 3.5A
55 mOhm @ 2A, 10V
-
18nC @ 10V
955pF @ 20V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot DMP2004VK-7
Diodes Incorporated

MOSFET 2P-CH 20V 0.53A SOT-563

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 530mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione733.524
Logic Level Gate
20V
530mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
-
175pF @ 16V
400mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot FDD8424H
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 9A/6.5A DPAK

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: TO-252-4L
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Azione292.224
Logic Level Gate
40V
9A, 6.5A
24 mOhm @ 9A, 10V
3V @ 250µA
20nC @ 10V
1000pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-5, DPak (4 Leads + Tab), TO-252AD
TO-252-4L
DMN2053UVTQ-13
Diodes Incorporated

MOSFET 2N-CH 20V 4.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
pacchetto: -
Request a Quote
-
20V
4.6A (Ta)
35mOhm @ 5A, 4.5V
1V @ 250µA
3.6nC @ 4.5V
369pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
BUK7K89-100E-1X
Nexperia USA Inc.

MOSFET 100V 13A LFPAK56D

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
  • Power - Max: 38W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
pacchetto: -
Request a Quote
-
100V
13A (Ta)
82.5mOhm @ 5A, 10V
4V @ 1mA
13.6nC @ 10V
811pF @ 25V
38W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
NTJD3158CT1G
onsemi

MOSFET N/P-CH 20V 0.63A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
  • Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
  • Power - Max: 270mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: -
Request a Quote
Logic Level Gate
20V
630mA, 820mA
375mOhm @ 630mA, 4.5V
1.5V @ 250µA
3nC @ 4.5V
46pF @ 20V
270mW
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
FW342-TL-E
onsemi

MOSFET N/P-CH 30V 6A/5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 5A
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
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Logic Level Gate
30V
6A, 5A
33mOhm @ 6A, 10V
-
16nC @ 10V
850pF @ 10V
1.8W
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
MSCSM120DDUM16CTBL3NG
Microchip Technology

SIC 4N-CH 1200V 150A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 560W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
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-
1200V (1.2kV)
150A
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
560W
-55°C ~ 175°C (TJ)
Chassis Mount
Module
-
DMN3401LDW-13
Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione59.580
-
30V
800mA (Ta)
400mOhm @ 590mA, 10V
1.6V @ 250µA
1.2nC @ 10V
50pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
EPC2111
EPC

GANFET 2N-CH 30V 16A DIE

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Azione59.616
-
30V
16A (Ta)
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
2.5V @ 5mA
2.2nC @ 5V, 5.7nC @ 5V
230pF @ 15V, 590pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
NVLJWD040N06CLTAG
onsemi

MOSFET 2N-CH 60V 5.5A 6WDFNW

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Power - Max: 2.2W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFNW (2.2x2.3)
pacchetto: -
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-
60V
5.5A (Ta), 18A (Tc)
38mOhm @ 5A, 10V
2V @ 13µA
6nC @ 10V
340pF @ 25V
2.2W (Ta), 24W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
6-WDFN Exposed Pad
6-WDFNW (2.2x2.3)
FDG6303N-F169
onsemi

MOSFET 2N-CH 25V 0.5A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88 (SC-70-6)
pacchetto: -
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Logic Level Gate
25V
500mA (Ta)
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
SQJQ936EL-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 100A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
pacchetto: -
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-
40V
100A (Tc)
2.3mOhm @ 5A, 10V
2.5V @ 250µA
45nC @ 10V
7300pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
NXH004P120M3F2PTNG
onsemi

SILICON CARBIDE (SIC) MODULE EL

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 120mA
  • Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
  • Power - Max: 1.1kW (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: 36-PIM (56.7x62.8)
pacchetto: -
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-
1200V (1.2kV)
338A (Tj)
5.5mOhm @ 200A, 18V
4.4V @ 120mA
876nC @ 20V
16410pF @ 800V
1.1kW (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
36-PIM (56.7x62.8)