Pagina 187 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 5.684
Pagina  187/203
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SI7911DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.2A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione328.704
Logic Level Gate
20V
4.2A
51 mOhm @ 5.7A, 4.5V
1V @ 250µA
15nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
APTM10DSKM19T3G
Microsemi Corporation

MOSFET 2N-CH 100V 70A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
pacchetto: SP3
Azione5.728
Standard
100V
70A
21 mOhm @ 35A, 10V
4V @ 1mA
200nC @ 10V
5100pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
SI4808DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.096
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
800mV @ 250µA (Min)
20nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4505DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V/8V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.320
Logic Level Gate
30V, 8V
6A, 3.8A
18 mOhm @ 7.8A, 10V
1.8V @ 250µA
20nC @ 5V
-
1.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.968
Logic Level Gate
30V
9A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AON6884
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 40V 9A DFN5X6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (5x6)
pacchetto: 8-PowerSMD, Flat Leads
Azione7.200
Logic Level Gate
40V
9A
11.3 mOhm @ 10A, 10V
2.7V @ 250µA
33nC @ 10V
1950pF @ 20V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
hot SH8M12TB1
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione688.152
Logic Level Gate
30V
5A, 4.5A
42 mOhm @ 5A, 10V
2.5V @ 1mA
4nC @ 5V
250pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CSD87502Q2
Texas Instruments

MOSFET 2N-CH 30V 5A 6WSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 32.4 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 353pF @ 15V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WSON (2x2)
pacchetto: 6-WDFN Exposed Pad
Azione5.104
Standard
30V
5A
32.4 mOhm @ 4A, 10V
2V @ 250µA
6nC @ 10V
353pF @ 15V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WSON (2x2)
hot EMH2407-TL-H
ON Semiconductor

MOSFET 2N-CH 20V 6A EMH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
pacchetto: 8-SMD, Flat Lead
Azione60.720
Logic Level Gate
20V
6A
25 mOhm @ 3A, 4.5V
-
6.3nC @ 4.5V
580pF @ 10V
1.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-EMH
hot FDMC8200S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A/8.5A 8MLP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 700mW, 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
pacchetto: 8-PowerWDFN
Azione423.984
Logic Level Gate
30V
6A, 8.5A
20 mOhm @ 6A, 10V
3V @ 250µA
10nC @ 10V
660pF @ 15V
700mW, 1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
UP0487C00L
Panasonic Electronic Components

MOSFET 2N-CH 20V 0.1A SSMINI-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 3V
  • Power - Max: 125mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMINI6-F1
pacchetto: SOT-563, SOT-666
Azione131.880
Logic Level Gate
20V
100mA
4 Ohm @ 10mA, 4V
1.3V @ 50µA
-
10pF @ 3V
125mW
125°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMINI6-F1
DMC1028UFDB-7
Diodes Incorporated

MOSFET N/P-CH 12V/20V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
pacchetto: 6-UDFN Exposed Pad
Azione127.494
Standard
12V, 20V
6A, 3.4A
25 mOhm @ 5.2A, 4.5V
1V @ 250µA
18.5nC @ 8V
787pF @ 6V
1.36W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
hot SSM6N57NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN(2x2)
pacchetto: 6-WDFN Exposed Pad
Azione13.344
Standard
30V
4A
46 mOhm @ 2A, 4.5V
1V @ 1mA
4nC @ 4.5V
310pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN(2x2)
hot SI1926DL-T1-E3
Vishay Siliconix

MOSFET 2N-CH 60V 0.37A SC-70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 370mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione161.292
Logic Level Gate
60V
370mA
1.4 Ohm @ 340mA, 10V
2.5V @ 250µA
1.4nC @ 10V
18.5pF @ 30V
510mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
BSS84DW-TP
Micro Commercial Co

MOSFET 2P-CH 50V 0.16A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 160mA
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione26.970
-
50V
160mA
8Ohm @ 100mA, 10V
2V @ 250µA
-
30pF @ 25V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
HUFA76407DK8T-F085
onsemi

MOSFET 2N-CH 60V 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: -
Azione4.500
Logic Level Gate
60V
-
90mOhm @ 3.8A, 10V
3V @ 250µA
11.2nC @ 10V
330pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
BSO220N03MDGXUMA1
Infineon Technologies

MOSFET 2N-CH 30V 6A 8DSO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
pacchetto: -
Azione45.426
Logic Level Gate
30V
6A
22mOhm @ 7.7A, 10V
2.1V @ 250µA
10nC @ 10V
800pF @ 15V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
PJQ2888_R1_00001
Panjit International Inc.

MOSFET 2P-CH 20V 1.5A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: DFN2020-8
pacchetto: -
Request a Quote
-
20V
1.5A (Ta)
325mOhm @ 1.5A, 4.5V
1V @ 250µA
2.2nC @ 4.5V
150pF @ 10V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-WFDFN Exposed Pad
DFN2020-8
SSM6N35AFU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
pacchetto: -
Azione14.265
-
20V
250mA (Ta)
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34nC @ 4.5V
36pF @ 10V
285mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
DMN3012LFG-7
Diodes Incorporated

MOSFET 2N-CH 30V 20A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
pacchetto: -
Request a Quote
-
30V
20A (Tc)
12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
2.1V @ 250µA, 1.15V @ 250µA
6.1nC @ 4.5V, 12.6nC @ 4.5V
850pF @ 15V, 1480pF @ 15V
2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
2SB808F-SPA
Sanyo

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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NVXR17S90M2SPC
onsemi

SIC 900V 8D MOSFET V-SSDC SPC

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 200mA
  • Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V
  • Power - Max: 1kW (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SSDC39
pacchetto: -
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900V
620A (Tj)
2.1mOhm @ 620A, 18V
4.3V @ 200mA
2400nC @ 18V
45000pF @ 400V
1kW (Tj)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SSDC39
CAS175M12BM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 228A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 175A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 43mA
  • Gate Charge (Qg) (Max) @ Vgs: 422nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
1200V (1.2kV)
228A (Tc)
10.4mOhm @ 175A, 15V
3.6V @ 43mA
422nC @ 15V
12900pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
NVJD5121NT1G-M06
onsemi

MOSFET 2N-CH 60V 0.295A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 295mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
  • Power - Max: 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
pacchetto: -
Azione43.410
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60V
295mA (Ta)
1.6Ohm @ 500mA, 10V
2.5V @ 250µA
0.9nC @ 4.5V
26pF @ 20V
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
DMN62D0UDWQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.35A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Power - Max: 320mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: -
Azione9.000
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60V
350mA (Ta)
2Ohm @ 100mA, 4.5V
1.1V @ 250µA
0.5nC @ 4.5V
32pF @ 30V
320mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SH8M51GZETB
Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
pacchetto: -
Azione14.688
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100V
3A (Ta), 2.5A (Ta)
170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
2.5V @ 1mA
8.5nC @ 5V, 12.5nC @ 5V
610pF @ 25V, 1550pF @ 25V
1.4W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMP68D1LVQ-7
Diodes Incorporated

BSS FAMILY SOT563 T&R 3K

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 238mA (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: -
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60V
238mA (Ta)
8Ohm @ 100mA, 5V
2.1V @ 250µA
0.6nC @ 5V
42pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
FF2MR12W3M1HB11BPSA1
Infineon Technologies

SIC 4N-CH 1200V AG-EASY3B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
  • Rds On (Max) @ Id, Vgs: 2.27mOhm @ 400A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 224mA
  • Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY3B
pacchetto: -
Azione27
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1200V (1.2kV)
400A (Tj)
2.27mOhm @ 400A, 18V
5.15V @ 224mA
1600nC @ 18V
48400pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY3B