Pagina 23 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  23/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BF799WH6327XTSA1
Infineon Technologies

TRANS RF NPN 20V SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 3dB @ 100MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione5.872
20V
800MHz
3dB @ 100MHz
-
280mW
40 @ 20mA, 10V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BFP182WE6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione3.312
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BGB 540 E6327
Infineon Technologies

TRANSISTOR RF ACT BIAS SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 16dB ~ 17.5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione5.920
3.5V
-
1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
16dB ~ 17.5dB
120mW
-
30mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFR 949L3 E6327
Infineon Technologies

TRANSISTOR RF NPN 10V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: SC-101, SOT-883
Azione4.784
10V
9GHz
1dB ~ 2.5dB @ 1GHz
21.5dB
250mW
100 @ 5mA, 6V
50mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFR 92W E6327
Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 11.5dB ~ 17dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione2.560
15V
5GHz
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
11.5dB ~ 17dB
280mW
70 @ 15mA, 8V
45mA
-
Surface Mount
SC-70, SOT-323
PG-SOT323-3
NE461M02-T1-QS-AZ
CEL

SAME AS 2SC5337 NPN SILICON MEDI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 8.3dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione7.712
15V
-
1.5dB ~ 2dB @ 500MHz ~ 1GHz
8.3dB
2W
60 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
JANTXV2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: 3-SMD, No Lead
Azione7.360
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
EC4H09C-TL-H
ON Semiconductor

TRANS NPN 3.5V 40MA ECSP1008-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 26GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
  • Gain: 15dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFDFN
  • Supplier Device Package: 4-ECSP1008
pacchetto: 4-UFDFN
Azione5.824
3.5V
26GHz
1.3dB @ 2GHz
15dB
120mW
70 @ 5mA, 1V
40mA
150°C (TJ)
Surface Mount
4-UFDFN
4-ECSP1008
BFG540W/XR,135
NXP

TRANS RF NPN 9GHZ 15V SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
pacchetto: SC-82A, SOT-343
Azione4.160
15V
9GHz
1.3dB ~ 2.4dB @ 900MHz
-
500mW
100 @ 40mA, 8V
120mA
175°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
NSVF2250WT1G
ON Semiconductor

TRANSISTOR NPN BIPO UHF SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
pacchetto: SC-70, SOT-323
Azione5.840
15V
-
-
-
-
-
50mA
-
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
BF959ZL1G
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.456
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLS3135-65,114
NXP

TRANSISTOR RF POWER SOT422A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 200W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-422A
  • Supplier Device Package: CDFM2
pacchetto: SOT-422A
Azione2.528
75V
3.5GHz
-
7dB
200W
40 @ 2A, 5V
8A
200°C (TJ)
Surface Mount
SOT-422A
CDFM2
SD1477
STMicroelectronics

TRANSISTOR NPN RF BIPO VHF 6LEAD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
pacchetto: M111
Azione3.504
18V
-
-
6dB
270W
10 @ 5A, 5V
20A
200°C (TJ)
Surface Mount
M111
M111
hot BF494
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.703.236
20V
-
-
-
350mW
67 @ 1mA, 10V
30mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
NE68519-T1
CEL

TRANS NPN 2GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione5.840
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
7.5dB
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot BFS17TA
Diodes Incorporated

TRANS RF NPN 1300MHZ SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione87.000
15V
1.3GHz
4.5dB @ 500MHz
-
330mW
20 @ 25mA, 1V
25mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
1004MP
Microsemi Corporation

TRANS RF BIPO 7W 300MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
pacchetto: 55FW-1
Azione5.984
50V
960MHz ~ 1.215GHz
-
7dB ~ 9dB
7W
20 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
MMBTH10LT3G
ON Semiconductor

TRANS VHF/UHF NPN 25V SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.736
25V
650MHz
-
-
225mW
60 @ 4mA, 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BFU725F/N1,115
NXP

TRANSISTOR NPN 40MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
pacchetto: SOT-343 Reverse Pinning
Azione2.016
2.8V
55GHz
0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
10dB ~ 24dB
136mW
160 @ 10mA, 2V
40mA
150°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
BFP520H6327XTSA1
Infineon Technologies

TRANS RF NPN 3.5V 40MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione24.738
3.5V
45GHz
0.95dB @ 1.8GHz
22.5dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP842ESDH6327XTSA1
Infineon Technologies

IC TRANSISTOR RF NPN SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.7V
  • Frequency - Transition: 60GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
  • Gain: 26dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione23.016
3.7V
60GHz
0.65dB @ 3.5GHz
26dB
120mW
150 @ 15mA, 2.5V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
CMPTH81-BK
Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
pacchetto: -
Request a Quote
20V
600MHz
-
-
225mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
CM4957-PBFREE
Central Semiconductor Corp

RF TRANS PNP 25V 2.5GHZ TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 25dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
pacchetto: -
Request a Quote
25V
2.5GHz
-
25dB
300mW
20 @ 2mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
MT3S113TU-LF
Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 11.2GHZ UFM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.3V
  • Frequency - Transition: 11.2GHz
  • Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
  • Gain: 12.5dB
  • Power - Max: 900mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: UFM
pacchetto: -
Azione7.506
5.3V
11.2GHz
1.45dB @ 1GHz
12.5dB
900mW
200 @ 30mA, 5V
100mA
150°C (TJ)
Surface Mount
3-SMD, Flat Lead
UFM
PH3135-90S
MACOM Technology Solutions

TRANSISTOR,90W,3.1-3.5GHZ,2US,10

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 580W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 10.7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: -
pacchetto: -
Request a Quote
65V
-
-
7.5dB
580W
-
10.7A
200°C (TJ)
Chassis Mount
2L-FLG
-
2SC5435-T1-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: 3-SuperMiniMold
pacchetto: -
Request a Quote
6V
12GHz
1.5dB @ 2GHz
8.5dB
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-623F
3-SuperMiniMold
2SC2620QCTR-E
Renesas Electronics Corporation

RF SMALL SIGNAL BIPOLAR TRANSIST

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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LC945P
onsemi

SS T092 GP XSTR NPN SPCL

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
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