Pagina 24 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.633
Pagina  24/59
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 520F E6327
Infineon Technologies

TRANSISTOR RF NPN 2.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
pacchetto: 4-SMD, Flat Leads
Azione2.480
3.5V
45GHz
0.95dB @ 1.8GHz
22.5dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFS17WE6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione7.856
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
hot 2N2857
Microsemi Corporation

TRANS RF BIPO NPN 15V 40MA TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
pacchetto: TO-206AF, TO-72-4 Metal Can
Azione20.976
15V
500MHz
4.5dB @ 450MHz
12.5dB ~ 21dB @ 450MHz
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
hot AT-41486-TR1G
Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 9dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
pacchetto: SOT-86
Azione188.040
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
9dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
hot BF240
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 1.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione44.400
40V
1.1GHz
-
-
350mW
65 @ 1mA, 10V
50mA
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot UPA806T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione534.720
6V
12GHz
1.5dB @ 2GHz
8.5dB
200mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
NE85639R-T1-A
CEL

TRANSISTOR NPN 1GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione3.584
12V
9GHz
1.5dB ~ 2.1dB @ 1GHz
13.5dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
hot 2N5770
Fairchild/ON Semiconductor

IC TRANS NPN SS RF 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione6.128.100
15V
-
6dB @ 60MHz
15dB
350mW
50 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFM505,115
NXP

TRANS NPN DUAL 8V 9GHZ 6TSSOP

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione7.536
8V
9GHz
1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
-
500mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
DME375A
Microsemi Corporation

TRANS RF BIPO 875W 30A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.5dB
  • Power - Max: 875W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
pacchetto: 55AW
Azione3.776
55V
1.025GHz ~ 1.15GHz
-
6.5dB
875W
10 @ 300mA, 5V
30A
200°C (TJ)
Chassis Mount
55AW
55AW
UTV040
Microsemi Corporation

TRANS RF BIPO 25W 2.5A 55FT-7

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
pacchetto: 55FT
Azione6.112
25V
470MHz ~ 860MHz
-
9dB
25W
10 @ 500mA, 5V
2.5A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
AT-32063-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 12.5dB ~ 14.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione3.776
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
12.5dB ~ 14.5dB
150mW
50 @ 5mA, 2.7V
32mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot AT-31011-TR1G
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione573.360
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
11dB ~ 13dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
BLT50,115
NXP

TRANS NPN 7.5V SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 470MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
pacchetto: TO-261-4, TO-261AA
Azione20.304
10V
470MHz
-
-
2W
25 @ 300mA, 5V
500mA
175°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BFR 740L3RH E6327
Infineon Technologies

TRANS RF BIPO NPN 30MA TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: SC-101, SOT-883
Azione7.312
4.7V
42GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
24.5dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
CPH6003A-TL-E
ON Semiconductor

TRANS NPN BIPO 12V 150MA CPH6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione2.752
12V
7GHz
1.8dB @ 1GHz
9dB
800mW
100 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
BFR 183 E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione24.168
12V
8GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
17.5dB
450mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFP196WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 150MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 12.5dB ~ 19dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione26.844
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
12.5dB ~ 19dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
NESG2030M04-T2-A
CEL

TRANS NPN 2GHZ SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.3V
  • Frequency - Transition: 60GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: M04
pacchetto: -
Request a Quote
2.3V
60GHz
0.9dB ~ 1.1dB @ 2GHz
16dB
80mW
200 @ 5mA, 2V
35mA
-
Surface Mount
SOT-343F
M04
BFR181E6327HTSA1
Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 18.5dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
pacchetto: -
Azione15.813
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
18.5dB
175mW
70 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
90025HS
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NESG220034-T1-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 11.5GHz
  • Noise Figure (dB Typ @ f): 0.9dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 886mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI (SOT-89)
pacchetto: -
Request a Quote
5.5V
11.5GHz
0.9dB @ 1GHz
12dB
886mW
140 @ 10mA, 5V
200mA
150°C (TJ)
Surface Mount
TO-243AA
PW-MINI (SOT-89)
NESG2021M16-T3-A
Renesas Electronics Corporation

RF SMALL SIGNAL TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
  • Gain: 10dB ~ 18dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: M16, 1208
pacchetto: -
Request a Quote
5V
25GHz
0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
10dB ~ 18dB
175mW
130 @ 5mA, 2V
35mA
-
Surface Mount
6-SMD, Flat Leads
M16, 1208
MAPL-000817-012CPC
MACOM Technology Solutions

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SMMBTH10LT1
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: -
Request a Quote
25V
-
-
-
225mW
60 @ 4mA, 10V
-
-55°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
CP616-2N5160-CM
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
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40V
500MHz
-
-
-
10 @ 50mA, 5V
400mA
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
BFR92PE6530HTSA1
Infineon Technologies

RF LOW-NOISE SI TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
CP229-2N5109-CT
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: 11dB
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacchetto: -
Request a Quote
20V
1.2GHz
3dB @ 200MHz
11dB
-
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Surface Mount
Die
Die