Pagina 371 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
FMKA130L	Fairchild/ON Semiconductor	DIODE SCHOTTKY 30V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 410mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: DO-214AC, SMA	Azione7.648	30V	1A	410mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 125°C
SRAF1690HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 920mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2 Full Pack	Azione5.136	90V	16A	920mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UPR30E3/TR7	Microsemi Corporation	DIODE GEN PURP 300V 2A POWERMITE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-216AA	Azione3.312	300V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
BYWB29-50-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione7.408	50V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 50V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
MBRF1035 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2 Full Pack	Azione5.648	35V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRB745HE3_A/P	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione4.848	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
SR810HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione3.392	100V	8A	920mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK82C M6G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-214AB, SMC	Azione7.104	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SF65G R0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione2.496	300V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EGP10G-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AL, DO-41, Axial	Azione145.656	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
S5M-M3/57T	Vishay Semiconductor Diodes Division	DIODE GPP 5A 1000V DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 250µA @ 1000V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione2.160	1000V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	250µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
S5GBHM4G	TSC America Inc.	DIODE, 5A, 400V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AA, SMB	Azione5.184	400V	5A	1.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BAS16-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-236-3, SC-59, SOT-23-3	Azione5.264	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
TSPB15U100S S1G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 15A, 10 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.0 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione3.552	100V	15A	700mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
MBR120LSFT3G	ON Semiconductor	DIODE SCHOTTKY 20V 1A SOD123L Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: SOD-123F	Azione672.000	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
DB2J50100L	Panasonic Electronic Components	DIODE SCHOTTKY 50V 200MA SMINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: 4pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SMini2-F5-B Operating Temperature - Junction: 125°C (Max)	pacchetto: SC-90, SOD-323F	Azione252.258	50V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	1.6ns	200µA @ 50V	4pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	SMini2-F5-B	125°C (Max)
SK810L-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 800mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione300.000	100V	8A	800mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	400pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
HER302BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	100 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
MBRB16H35HE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 35V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 35 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	35 V	16A	660 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 35 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
US1C-TP	Micro Commercial Co	DIODE GEN PURP 150V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	150 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
S2G-AU_R1_000A1	Panjit International Inc.	DIODE GEN PURP 400V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	400 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
S1AB-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PMEG3010EGW-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: 55pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	pacchetto: -	Request a Quote	30 V	1A	560 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	55pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
W7045MC030	IXYS	DIODE GEN PURP 300V 7045A W54 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 7045A Voltage - Forward (Vf) (Max) @ If: 1.49 V @ 21000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 17.7 µs Current - Reverse Leakage @ Vr: 50 mA @ 300 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 190°C	pacchetto: -	Request a Quote	300 V	7045A	1.49 V @ 21000 A	Standard Recovery >500ns, > 200mA (Io)	17.7 µs	50 mA @ 300 V	-	Clamp On	DO-200AC, K-PUK	W54	-40°C ~ 190°C
JANTXV1N6661US-TR	Microchip Technology	DIODE GEN PURP 225V 500MA D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 225 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	225 V	500mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 225 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
B260AX-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA T&R 5K Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	60 V	2A	520 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
TPAR3J	Taiwan Semiconductor Corporation	120NS, 3A, 600V, FAST RECOVERY R Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 58pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	600 V	3A	1.55 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	10 µA @ 600 V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
1N1203	Solid State Inc.	DIODE GEN PURP 300V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	300 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C

FMKA130L

Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 410mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: DO-214AC, SMA

Azione7.648

30V

1A

410mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 125°C

SRAF1690HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack

Azione5.136

90V

16A

920mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

UPR30E3/TR7

Microsemi Corporation

DIODE GEN PURP 300V 2A POWERMITE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-216AA

Azione3.312

300V

2A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 150°C

BYWB29-50-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione7.408

50V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 50V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

MBRF1035 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack

Azione5.648

35V

10A

700mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

MBRB745HE3_A/P

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione4.848

45V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

SR810HB0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione3.392

100V

8A

920mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SK82C M6G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-214AB, SMC

Azione7.104

20V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 125°C

SF65G R0G

TSC America Inc.

DIODE, SUPER FAST, 6A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione2.496

300V

6A

1.3V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

EGP10G-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AL, DO-41, Axial

Azione145.656

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

S5M-M3/57T

Vishay Semiconductor Diodes Division

DIODE GPP 5A 1000V DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 250µA @ 1000V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione2.160

1000V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

250µA @ 1000V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

S5GBHM4G

TSC America Inc.

DIODE, 5A, 400V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AA, SMB

Azione5.184

400V

5A

1.1V @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

40pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BAS16-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-236-3, SC-59, SOT-23-3

Azione5.264

75V

150mA

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

6ns

1µA @ 75V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

TSPB15U100S S1G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 15A, 10

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.0
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione3.552

100V

15A

700mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 100V

-

Surface Mount

TO-277, 3-PowerDFN

SMPC4.0

-55°C ~ 150°C

MBR120LSFT3G

ON Semiconductor

DIODE SCHOTTKY 20V 1A SOD123L

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: SOD-123F

Azione672.000

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 125°C

DB2J50100L

Panasonic Electronic Components

DIODE SCHOTTKY 50V 200MA SMINI2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: 4pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SMini2-F5-B
Operating Temperature - Junction: 125°C (Max)

pacchetto: SC-90, SOD-323F

Azione252.258

50V

200mA

550mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

1.6ns

200µA @ 50V

4pF @ 10V, 1MHz

Surface Mount

SC-90, SOD-323F

SMini2-F5-B

125°C (Max)

SK810L-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione300.000

100V

8A

800mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

400pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

HER302BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 100V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

100 V

3A

1.1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 100 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

MBRB16H35HE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 35V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

35 V

16A

660 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 35 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

US1C-TP

Micro Commercial Co

DIODE GEN PURP 150V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

150 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 150 V

20pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

S2G-AU_R1_000A1

Panjit International Inc.

DIODE GEN PURP 400V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

400 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

S1AB-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

PMEG3010EGW-QX

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Capacitance @ Vr, F: 55pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C

pacchetto: -

Request a Quote

30 V

1A

560 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 30 V

55pF @ 1V, 1MHz

Surface Mount

SOD-123

150°C

W7045MC030

IXYS

DIODE GEN PURP 300V 7045A W54

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 7045A
Voltage - Forward (Vf) (Max) @ If: 1.49 V @ 21000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17.7 µs
Current - Reverse Leakage @ Vr: 50 mA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 190°C

pacchetto: -

Request a Quote

300 V

7045A

1.49 V @ 21000 A

Standard Recovery >500ns, > 200mA (Io)

17.7 µs

50 mA @ 300 V

-

Clamp On

DO-200AC, K-PUK

W54

-40°C ~ 190°C

JANTXV1N6661US-TR

Microchip Technology

DIODE GEN PURP 225V 500MA D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

225 V

500mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

50 nA @ 225 V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

B260AX-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA T&R 5K

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

60 V

2A

520 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

TPAR3J

Taiwan Semiconductor Corporation

120NS, 3A, 600V, FAST RECOVERY R

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

600 V

3A

1.55 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

120 ns

10 µA @ 600 V

58pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

1N1203

Solid State Inc.

DIODE GEN PURP 300V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

300 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 300 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C