Pagina 369 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  369/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SF10JG-A
Diodes Incorporated

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione4.064
600V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
50pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
1SR124-400AT-81
Rohm Semiconductor

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: GSR
  • Operating Temperature - Junction: -60°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione7.120
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
10µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
GSR
-60°C ~ 150°C
RS1JHE3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione2.100
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
7pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot STTH1202FP
STMicroelectronics

DIODE GEN PURP 200V 12A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FPAC
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: TO-220-2 Full Pack
Azione10.872
200V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C (Max)
1N4154TR
Fairchild/ON Semiconductor

DIODE GEN PURP 35V 100MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-204AH, DO-35, Axial
Azione6.608
35V
100mA
1V @ 30mA
Small Signal =< 200mA (Io), Any Speed
4ns
100nA @ 25V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
1N5415
Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: B, Axial
Azione4.448
50V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 50V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
VS-80APF10PBF
Vishay Semiconductor Diodes Division

DIODE FAST REC 80A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 480ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-247-3
Azione5.136
1000V
80A
1.35V @ 80A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1000V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
FESF8FT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2 Full Pack, Isolated Tab
Azione3.456
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
VS-50WQ10FNHM3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5.5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Capacitance @ Vr, F: 183pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione3.472
100V
5.5A
770mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
183pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
31GF6-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-201AD, Axial
Azione2.100
600V
3A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
20µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
BYM13-60-E3/97
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-213AB, MELF
Azione2.608
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 150°C
U1D-E3/5AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 24ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione7.008
200V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
24ns
5µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SF11GHR0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione5.936
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS14LHRTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: DO-219AB
Azione5.072
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
BAT43 A0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: DO-204AH, DO-35, Axial
Azione4.384
30V
200mA
450mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
hot 1SS250(TE85L,F)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione35.760
200V
100mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
60ns
1µA @ 200V
3pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
125°C (Max)
hot S3D
S3D
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione1.970.448
200V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
5µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
BAS70H,115
Nexperia USA Inc.

DIODE SCHOTTKY 70V 70MA SOD123F

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 70mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 70V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-123F
Azione55.416
70V
70mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
-
10µA @ 70V
2pF @ 0V, 1MHz
Surface Mount
SOD-123F
SOD-123F
150°C (Max)
SK1010H-LTP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
100 V
10A
820 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 100 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 175°C
SE12DTLJ-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.6A SMPD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3.6A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 96pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: SMPD
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Azione6.900
600 V
3.6A
1 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
5 µA @ 600 V
96pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
SMPD
-55°C ~ 175°C
PMEG050V150EPE-QZ
Nexperia USA Inc.

DIODE SCHOTTKY 50V 15A CFP15B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 27 ns
  • Current - Reverse Leakage @ Vr: 370 µA @ 50 V
  • Capacitance @ Vr, F: 833pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: CFP15B
  • Operating Temperature - Junction: 175°C
pacchetto: -
Azione14.106
50 V
15A
650 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
27 ns
370 µA @ 50 V
833pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
CFP15B
175°C
RURU10060RA
Harris Corporation

100A, 600V ULTRAFAST DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
AU1FM-M3-I
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
1000 V
1A
1.85 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
1 µA @ 1000 V
8.2pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
UFR8515R
Microsemi Corporation

DIODE GEN PURP 150V DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 85 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: 675pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
150 V
-
975 mV @ 85 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 150 V
675pF @ 10V, 1MHz
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-55°C ~ 175°C
S43110
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
FRA802GF-BP
Micro Commercial Co

DIODE GEN PURP 100V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
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100 V
8A
1.3 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 100 V
60pF @ 4V, 1MHz
Through Hole
TO-220-2 Isolated Tab
ITO-220AC
-55°C ~ 150°C
V30KM60HM3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 5A FLATPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 650 µA @ 60 V
  • Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
  • Operating Temperature - Junction: -40°C ~ 165°C
pacchetto: -
Azione9.000
60 V
5A
670 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
650 µA @ 60 V
3200pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
-40°C ~ 165°C
SR1045-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 45 V
  • Capacitance @ Vr, F: 450pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
45 V
10A
550 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 45 V
450pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C