Pagina 374 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
40EPF04	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 40A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: TO-247-2	Azione7.632	400V	40A	1.25V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 400V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
VS-301U160	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 330A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 330A Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	pacchetto: DO-205AB, DO-9, Stud	Azione3.456	1600V	330A	1.22V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
125NQ015-1	SMC Diode Solutions	DIODE SCHOTTKY 15V 120A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 390mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 15V Capacitance @ Vr, F: 7700pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: HALF-PAK	Azione3.312	15V	120A	390mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	40mA @ 15V	7700pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 125°C
VS-71HFLR100S05	Vishay Semiconductor Diodes Division	DIODE STD REC ISO LEAD 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	pacchetto: DO-203AB, DO-5, Stud	Azione3.200	1000V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
CDLL4454	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-213AA	Azione6.016	50V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
HSM550J/TR13	Microsemi Corporation	DIODE SCHOTTKY 50V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-214AB, SMC	Azione7.504	50V	5A	650mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
HSM3100JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-214AB, SMC	Azione6.128	100V	3A	810mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
MBRF1635-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-220-2 Full Pack, Isolated Tab	Azione7.600	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 35V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
SFAF802G C0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2 Full Pack	Azione3.440	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	90pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
BYWF29-100-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: TO-220-2 Full Pack, Isolated Tab	Azione6.544	100V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
GPA806HC0G	TSC America Inc.	DIODE, 8A, 800V, AEC-Q101, TO-22 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2	Azione6.384	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF32GHA0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione2.832	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS1AHR3G	TSC America Inc.	DIODE, FAST, 1A, 50V, 150NS, AEC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione5.040	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BAV19W-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 100V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	pacchetto: SOD-123	Azione2.832	100V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
TSPB15U45S S1G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 15A, 45 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.0 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione5.744	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
S1GM RSG	TSC America Inc.	DIODE, 1A, 400V, MICRO SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: 2-SMD, Flat Lead	Azione3.248	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 400V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
ST1040STR	SMC Diode Solutions	DIODE SCHOTTKY 40V 10A TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-277, 3-PowerDFN	Azione3.456	40V	10A	470mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 40V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
S3GTR	SMC Diode Solutions	DIODE GEN PURP 400V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-214AB, SMC	Azione7.936	400V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 175°C
PMEG050V150EPDZ	Nexperia USA Inc.	DIODE SCHOTTKY 50V 15A CFP15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 500mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 1mA @ 50V Capacitance @ Vr, F: 1750pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: CFP15 Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: 3-SMD, Flat Leads	Azione15.312	50V	15A	500mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1mA @ 50V	1750pF @ 1V, 1MHz	Surface Mount	3-SMD, Flat Leads	CFP15	-55°C ~ 175°C
1N5401G-T	Diodes Incorporated	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione13.368	100V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	Axial	-65°C ~ 150°C
SK110-LTP	Micro Commercial Co	DIODE SCHOTTKY 100V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: DO-214AA, SMB	Azione25.656	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SDS065J002D3-ISARH	Luminus Devices Inc.	DIODE 650V-2A TO252-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 8 µA @ 650 V Capacitance @ Vr, F: 113pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2L Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Request a Quote	650 V	9A	1.5 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 650 V	113pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2L	-55°C ~ 175°C
JANTX1N647-1-TR	Microchip Technology	DIODE GEN PURP 400V 400MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	400 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 400 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N3595US-TR	Microchip Technology	DIODE GEN PURP 125V 4A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	125 V	4A	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
SF45G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione7.500	300 V	4A	1.3 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
DZ600N16KHPSA1	Infineon Technologies	DIODE GEN PURP 1.6KV 735A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 735A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: -	Azione9	1600 V	735A	1.4 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1600 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C
SURD8530T4G	onsemi	DIODE GEN PURP 300V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	300 V	5A	1.05 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-65°C ~ 175°C
SDURD840	SMC Diode Solutions	DIODE GEN PURP 400V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione8.493	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 400 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C

40EPF04

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 40A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: TO-247-2

Azione7.632

400V

40A

1.25V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 400V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

VS-301U160

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 330A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 330A
Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-205AB, DO-9, Stud

Azione3.456

1600V

330A

1.22V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 1600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-40°C ~ 180°C

125NQ015-1

SMC Diode Solutions

DIODE SCHOTTKY 15V 120A PRM1-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 390mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 15V
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: HALF-PAK

Azione3.312

15V

120A

390mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

40mA @ 15V

7700pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 125°C

VS-71HFLR100S05

Vishay Semiconductor Diodes Division

DIODE STD REC ISO LEAD 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

pacchetto: DO-203AB, DO-5, Stud

Azione3.200

1000V

70A

1.35V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

CDLL4454

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-213AA

Azione6.016

50V

200mA

1V @ 10mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Surface Mount

DO-213AA

-55°C ~ 175°C

HSM550J/TR13

Microsemi Corporation

DIODE SCHOTTKY 50V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-214AB, SMC

Azione7.504

50V

5A

650mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 50V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

HSM3100JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 100V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-214AB, SMC

Azione6.128

100V

3A

810mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 175°C

MBRF1635-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-220-2 Full Pack, Isolated Tab

Azione7.600

35V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 35V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

SFAF802G C0G

TSC America Inc.

DIODE, SUPER FAST, 8A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack

Azione3.440

100V

8A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

90pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

BYWF29-100-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: TO-220-2 Full Pack, Isolated Tab

Azione6.544

100V

8A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 100V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

GPA806HC0G

TSC America Inc.

DIODE, 8A, 800V, AEC-Q101, TO-22

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

Azione6.384

800V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SF32GHA0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione2.832

100V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

RS1AHR3G

TSC America Inc.

DIODE, FAST, 1A, 50V, 150NS, AEC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione5.040

50V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BAV19W-HE3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 100V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)

pacchetto: SOD-123

Azione2.832

100V

250mA (DC)

1.25V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 100V

1.5pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C (Max)

TSPB15U45S S1G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 15A, 45

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: SMPC4.0
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione5.744

45V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 45V

-

Surface Mount

TO-277, 3-PowerDFN

SMPC4.0

-55°C ~ 150°C

S1GM RSG

TSC America Inc.

DIODE, 1A, 400V, MICRO SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: 2-SMD, Flat Lead

Azione3.248

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

1µA @ 400V

5pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

Micro SMA

-55°C ~ 175°C

ST1040STR

SMC Diode Solutions

DIODE SCHOTTKY 40V 10A TO277B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-277, 3-PowerDFN

Azione3.456

40V

10A

470mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 40V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277B

-55°C ~ 150°C

S3GTR

SMC Diode Solutions

DIODE GEN PURP 400V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-214AB, SMC

Azione7.936

400V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 175°C

PMEG050V150EPDZ

Nexperia USA Inc.

DIODE SCHOTTKY 50V 15A CFP15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: 1750pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: CFP15
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: 3-SMD, Flat Leads

Azione15.312

50V

15A

500mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

1mA @ 50V

1750pF @ 1V, 1MHz

Surface Mount

3-SMD, Flat Leads

CFP15

-55°C ~ 175°C

1N5401G-T

Diodes Incorporated

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione13.368

100V

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 100V

40pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

Axial

-65°C ~ 150°C

SK110-LTP

Micro Commercial Co

DIODE SCHOTTKY 100V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: DO-214AA, SMB

Azione25.656

100V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

SDS065J002D3-ISARH

Luminus Devices Inc.

DIODE 650V-2A TO252-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 8 µA @ 650 V
Capacitance @ Vr, F: 113pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Request a Quote

650 V

9A

1.5 V @ 2 A

No Recovery Time > 500mA (Io)

0 ns

8 µA @ 650 V

113pF @ 0V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252-2L

-55°C ~ 175°C

JANTX1N647-1-TR

Microchip Technology

DIODE GEN PURP 400V 400MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

400 V

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

50 nA @ 400 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

JAN1N3595US-TR

Microchip Technology

DIODE GEN PURP 125V 4A B SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

125 V

4A

1 V @ 200 mA

Standard Recovery >500ns, > 200mA (Io)

3 µs

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

SF45G

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione7.500

300 V

4A

1.3 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 300 V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

DZ600N16KHPSA1

Infineon Technologies

DIODE GEN PURP 1.6KV 735A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 735A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

Azione9

1600 V

735A

1.4 V @ 2200 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 1600 V

-

Chassis Mount

Module

-40°C ~ 150°C

SURD8530T4G

onsemi

DIODE GEN PURP 300V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

300 V

5A

1.05 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 300 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-65°C ~ 175°C

SDURD840

SMC Diode Solutions

DIODE GEN PURP 400V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione8.493

400 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

10 µA @ 400 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C