Pagina 202 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4001-N-0-2-BP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	pacchetto: DO-204AL, DO-41, Axial	Azione6.464	50V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-
VS-30BQ040TRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione239.676	40V	3A	530mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
SD153R08S10PV	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 150A DO205AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1µs Current - Reverse Leakage @ Vr: 35mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AC, DO-30, Stud Supplier Device Package: DO-205AC (DO-30) Operating Temperature - Junction: -40°C ~ 125°C	pacchetto: DO-205AC, DO-30, Stud	Azione6.128	800V	150A	1.55V @ 470A	Standard Recovery >500ns, > 200mA (Io)	1µs	35mA @ 800V	-	Chassis, Stud Mount	DO-205AC, DO-30, Stud	DO-205AC (DO-30)	-40°C ~ 125°C
HSM540G/TR13	Microsemi Corporation	DIODE SCHOTTKY 5A 40V SMCG Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione7.984	-	-	-	-	-	-	-	-	-	-	-
BYV30-600PQ	WeEn Semiconductors	BYV30-600PQ TO-220AC STANDARD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione6.720	-	-	-	-	-	-	-	-	-	-	-
MBRB16H35HE3_A/P	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Azione3.648	35V	16A	660mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
SF42G B0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-201AD, Axial	Azione6.624	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CDBM240-HF	Comchip Technology	DIODE SCHOTTKY 40V 2A MINISMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: Mini SMA/SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	pacchetto: SOD-123T	Azione6.464	40V	2A (DC)	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	Mini SMA/SOD-123	-55°C ~ 125°C
EGP20B-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-204AC, DO-15, Axial	Azione574.740	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	70pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 150°C
ESH1B-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: DO-214AC, SMA	Azione7.616	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S3K M6G	TSC America Inc.	DIODE, 3A, 800V, DO-214AB (SMC) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione5.840	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SS2FL4HM3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO-219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 220µA @ 40V Capacitance @ Vr, F: 125pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-219AB	Azione2.704	40V	2A	580mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	220µA @ 40V	125pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
CDSFR4448	Comchip Technology	DIODE GEN PURP 80V 125MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 125mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 9ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	pacchetto: 1005 (2512 Metric)	Azione2.496	80V	125mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	9ns	100nA @ 80V	9pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
SDURF2020	SMC Diode Solutions	DIODE GEN PURP 200V ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 15µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2 Full Pack, Isolated Tab	Azione23.748	200V	-	1.15V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	15µA @ 200V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
SBR130SV-7	Diodes Incorporated	DIODE SBR 30V 1A SOT563 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 560mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: SOT-563, SOT-666	Azione108.000	30V	1A	560mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SOT-563, SOT-666	SOT-563	-65°C ~ 150°C
MUR1540G	ON Semiconductor	DIODE GEN PURP 400V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: TO-220-2	Azione375.732	400V	15A	1.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
1N1348RA	Solid State Inc.	DIODE GEN PURP REV 600V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	600 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
PMEG4005AEA-ZLX	Nexperia USA Inc.	DIODE SCHOTTKY 40V 500MA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 43pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	pacchetto: -	Request a Quote	40 V	500mA	470 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	43pF @ 1V, 1MHz	Surface Mount	-	-	150°C (Max)
BAT54SD-RF	Taiwan Semiconductor Corporation	SOT-363, 30V, 0.2A, SCHOTTKY DIO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363	-65°C ~ 150°C
S3630	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CMR3U-01M-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 100V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	100 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
SFC3005A	SMC Diode Solutions	DIODE SCHOTTKY 30V 500MA 2WLCSP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 30 V Capacitance @ Vr, F: 11pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 2-WLCSP (1x0.6) Operating Temperature - Junction: 150°C (Max)	pacchetto: -	Request a Quote	30 V	500mA	800 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 30 V	11pF @ 5V, 1MHz	Surface Mount	0402 (1006 Metric)	2-WLCSP (1x0.6)	150°C (Max)
SGL34-30	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 150°C	pacchetto: -	Request a Quote	30 V	500mA	500 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 150°C
1N1192A	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	pacchetto: -	Request a Quote	100 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
RURD3080	Harris Corporation	RECTIFIER DIODE, 30A, 800V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
V8PL63-M3-H	Vishay General Semiconductor - Diodes Division	8A, 60V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 180 µA @ 60 V Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	pacchetto: -	Azione13.500	60 V	8A	580 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	180 µA @ 60 V	1400pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
NTE574	NTE Electronics, Inc	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: -	Request a Quote	400 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 400 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
HVD132KRF-E	Renesas Electronics Corporation	DIODE FOR ANTENNA SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

1N4001-N-0-2-BP

Micro Commercial Co

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -

pacchetto: DO-204AL, DO-41, Axial

Azione6.464

50V

1A (DC)

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-

VS-30BQ040TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione239.676

40V

3A

530mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

SD153R08S10PV

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 150A DO205AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1µs
Current - Reverse Leakage @ Vr: 35mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AC, DO-30, Stud
Supplier Device Package: DO-205AC (DO-30)
Operating Temperature - Junction: -40°C ~ 125°C

pacchetto: DO-205AC, DO-30, Stud

Azione6.128

800V

150A

1.55V @ 470A

Standard Recovery >500ns, > 200mA (Io)

1µs

35mA @ 800V

-

Chassis, Stud Mount

DO-205AC, DO-30, Stud

DO-205AC (DO-30)

-40°C ~ 125°C

HSM540G/TR13

Microsemi Corporation

DIODE SCHOTTKY 5A 40V SMCG

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione7.984

-

BYV30-600PQ

WeEn Semiconductors

BYV30-600PQ TO-220AC STANDARD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione6.720

-

MBRB16H35HE3_A/P

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Azione3.648

35V

16A

660mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

SF42G B0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-201AD, Axial

Azione6.624

100V

4A

1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

CDBM240-HF

Comchip Technology

DIODE SCHOTTKY 40V 2A MINISMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: Mini SMA/SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

pacchetto: SOD-123T

Azione6.464

40V

2A (DC)

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

160pF @ 4V, 1MHz

Surface Mount

SOD-123T

Mini SMA/SOD-123

-55°C ~ 125°C

EGP20B-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-204AC, DO-15, Axial

Azione574.740

100V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

70pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 150°C

ESH1B-M3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: DO-214AC, SMA

Azione7.616

100V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

S3K M6G

TSC America Inc.

DIODE, 3A, 800V, DO-214AB (SMC)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione5.840

800V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 800V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SS2FL4HM3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO-219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 220µA @ 40V
Capacitance @ Vr, F: 125pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-219AB

Azione2.704

40V

2A

580mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

220µA @ 40V

125pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

CDSFR4448

Comchip Technology

DIODE GEN PURP 80V 125MA 1005

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 125mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 9ns
Current - Reverse Leakage @ Vr: 100nA @ 80V
Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005/SOD-323F
Operating Temperature - Junction: 125°C (Max)

pacchetto: 1005 (2512 Metric)

Azione2.496

80V

125mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

9ns

100nA @ 80V

9pF @ 0.5V, 1MHz

Surface Mount

1005 (2512 Metric)

1005/SOD-323F

125°C (Max)

SDURF2020

SMC Diode Solutions

DIODE GEN PURP 200V ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 15µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack, Isolated Tab

Azione23.748

200V

-

1.15V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

15µA @ 200V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 150°C

SBR130SV-7

Diodes Incorporated

DIODE SBR 30V 1A SOT563

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: SOT-563, SOT-666

Azione108.000

30V

1A

560mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 30V

-

Surface Mount

SOT-563, SOT-666

SOT-563

-65°C ~ 150°C

MUR1540G

ON Semiconductor

DIODE GEN PURP 400V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: TO-220-2

Azione375.732

400V

15A

1.25V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 400V

-

Through Hole

TO-220-2

-65°C ~ 175°C

1N1348RA

Solid State Inc.

DIODE GEN PURP REV 600V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

600 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

PMEG4005AEA-ZLX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

pacchetto: -

Request a Quote

40 V

500mA

470 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

43pF @ 1V, 1MHz

Surface Mount

-

150°C (Max)

BAT54SD-RF

Taiwan Semiconductor Corporation

SOT-363, 30V, 0.2A, SCHOTTKY DIO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

-65°C ~ 150°C

S3630

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

CMR3U-01M-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 100V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

100 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

SFC3005A

SMC Diode Solutions

DIODE SCHOTTKY 30V 500MA 2WLCSP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 30 V
Capacitance @ Vr, F: 11pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 2-WLCSP (1x0.6)
Operating Temperature - Junction: 150°C (Max)

pacchetto: -

Request a Quote

30 V

500mA

800 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 30 V

11pF @ 5V, 1MHz

Surface Mount

0402 (1006 Metric)

2-WLCSP (1x0.6)

150°C (Max)

SGL34-30

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA, MINI-MELF
Operating Temperature - Junction: -50°C ~ 150°C

pacchetto: -

Request a Quote

30 V

500mA

500 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 30 V

-

Surface Mount

DO-213AA

DO-213AA, MINI-MELF

-50°C ~ 150°C

1N1192A

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

pacchetto: -

Request a Quote

100 V

40A

1.19 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

RURD3080

Harris Corporation

RECTIFIER DIODE, 30A, 800V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

V8PL63-M3-H

Vishay General Semiconductor - Diodes Division

8A, 60V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Capacitance @ Vr, F: 1400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

pacchetto: -

Azione13.500

60 V

8A

580 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

180 µA @ 60 V

1400pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

NTE574

NTE Electronics, Inc

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: -

Request a Quote

400 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

50 µA @ 400 V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

HVD132KRF-E

Renesas Electronics Corporation

DIODE FOR ANTENNA SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-